Reactive magnetron sputtering of transparent conductive oxide thin films: Role of energetic particle (ion) bombardment

2012 ◽  
Vol 27 (5) ◽  
pp. 765-779 ◽  
Author(s):  
Klaus Ellmer ◽  
Thomas Welzel
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Energetic Particle ◽  
Transparent Conductive Oxide ◽  
Ion Bombardment ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Conductive Oxide ◽  
Image Position

Abstract

Role of carbon in the formation of hard Ge1−xCx thin films by reactive magnetron sputtering

2011 ◽  
Vol 406 (13) ◽  
pp. 2658-2662 ◽  
Author(s):  
Chaoquan Hu ◽  
Liang Qiao ◽  
Hongwei Tian ◽  
Xianyi Lu ◽  
Qing Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Growth of (Zr,Ti)N Thin Films by Ion-Assisted Dual D.C. Reactive Magnetron Sputtering

2008 ◽  
Vol 136 ◽  
pp. 133-138 ◽  
Author(s):  
Satreerat K. Hodak ◽  
T. Seppänen ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Growth ◽  
Ion Bombardment ◽  
Growth Conditions ◽  
Reactive Magnetron Sputtering ◽  
Silicon Substrates ◽  
Diffraction Measurement ◽  
Reactive Magnetron ◽  
X Ray Diffraction

The ternary nitride (Zr,Ti)N thin films were grown on silicon substrates by ion-assisted dual d.c. reactive magnetron sputtering technique. The substrates were exposed to ion bombardment with varying kinetic energy in the range of 3-103 eV under N/Ar ratio of 1:3. The (Zr0.6Ti0.4)N was formed at all growth conditions. X-ray diffraction measurement indicates the presence of (Zr,Ti)N solid solution with (111) and (200) preferred orientations. The (200) orientation is only present when the films are grown at ion bombardment energies higher than 33 eV. Optimum conditions for film growth produced hardness in the range of 27-29 GPa.

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