Comparison between the optical and surface properties of TiO2 and Ag/TiO2 thin films prepared by sol-gel process

2011 ◽  
Vol 1352 ◽  
Author(s):  
Marcelo M. Viana ◽  
Nelcy D. S. Mohallem

ABSTRACTColloidal precursor solutions, obtained from a mixture of titanium isopropoxide, isopropyl alcohol and silver nitrate, were used to fabricate amorphous TiO2 and Ag/TiO2 thin films by sol-gel process. The films were deposited on borosilicate substrates, which were heated at 400 °C for 30 minutes and cooled rapidly to the formation of amorphous coatings. The films were investigated by X-ray diffraction, scanning electron microscopy, atomic force microscopy and UV-vis spectroscopy. The thickness, roughness, refraction index, and particle size of the TiO2 and Ag/TiO2 films were determined and compared. Finally, hydrophobic-hydrophilic property was evaluated to the thin films produced.

2004 ◽  
Vol 19 (5) ◽  
pp. 1492-1498 ◽  
Author(s):  
Stacey W. Boland ◽  
Suresh C. Pillai ◽  
Wein-Duo Yang ◽  
Sossina M. Haile

Solid solution Pb1-xBaxTiO3, with particular emphasis on Pb0.5Ba0.5TiO3, was prepared using a sol-gel process incorporating lead acetate trihydrate, barium acetate, and titanium isopropoxide as precursors, acetylacetone (2,4 pentanedione) as a chelating agent, and ethylene glycol as a solvent. The synthesis procedure was optimized by systematically varying acetylacetone: Ti and H2O:Ti molar ratios and calcination temperature. The resulting effects on sol and powder properties were studied using thermogravimetric analysis/differential scanning calorimetry, Fourier transform infrared spectroscopy, Brunauer-Emmett-Teller analysis, and x-ray diffraction (XRD). Crystallization of the perovskite structure occurred at a temperature as low as 450 °C. Thin films were prepared by spin coating on (100) MgO. Pyrolysis temperature and heating rate were varied, and the resultant film properties investigated using field-emission scanning electron microscopy, atomic force microscopy, and XRD. Under optimized conditions, highly oriented films were obtained at a crystallization temperature of 600 °C.


2005 ◽  
Vol 475-479 ◽  
pp. 3693-3696
Author(s):  
Wen Xiu Cheng ◽  
Ai Li Ding ◽  
Ping Sun Qiu

Amorphous and crystalline (Zr0.8,Sn0.2)TiO4 (ZST) thin films deposited on Si(100) substrates have been prepared by a sol-gel process. The crystal structure and surface morphologies of the thin films have been studied by X-ray diffraction and atomic force microscopy. The crystalline ZST films on Si(100) substrata with a (111) orientation The refractive index n and extinction coefficient k of the amorphous and crystalline thin films were obtained by spectroscopy ellipsometry as a function of phone energy in the range from 0.7 to 5.4 eV. The absorption edges for amorphous and crystalline ZST are 3.83 and 3.51eV of indirect–transition type respectively.


2003 ◽  
Vol 784 ◽  
Author(s):  
Y. X. Liu ◽  
C. Caragianis-Broadbridge ◽  
A. H. Lehman ◽  
J. McGuinness ◽  
T. P. Ma

ABSTRACTWe report sol-gel process of Pb5Ge3O11 (PGO) as well as the microstructure and physical properties of ferroelectric PGO films for memory applications. The PGO sol was prepared from lead acetate hydrate, germanium isopropoxide, and di(ethylene glycol) ethyl ether. The reactions taking place during the sol-gel process were examined in detail. Diethanolamine (DEA) was added to help maintain the desired species ratio and prevent germanium oxide precipitation. The preferred orientation of the PGO thin films was well controlled by the heating and reflux procedures in the sol-gel preparation process. Additionally, to examine the impact of postdeposition processing, selected samples were oxygen annealed at temperatures ranging from 450–650°C. The samples were characterized with X-ray diffraction (XRD), non-contact (planview) atomic force microscopy (NC-AFM). The resulting data indicate that the microstructure and physical properties of PGO films depend strongly on the precursor preparation as well as the post deposition annealing temperature.


1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.


Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.


2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.


2008 ◽  
Vol 8 (8) ◽  
pp. 4231-4237 ◽  
Author(s):  
Madhavi Thakurdesai ◽  
T. Mohanty ◽  
J. John ◽  
T. K. Gundu Rao ◽  
Pratap Raychaudhuri ◽  
...  

Nanodimensional TiO2 has wide application in the field of photocatalysis, photovoltaic and photochromic devices. In present investigation TiO2 thin films deposited by pulsed laser deposition method are irradiated by 100 MeV Ag ion beam to achieve growth of nanophases. The nanostructure evolution is characterized by atomic force microscopy (AFM). The phases of TiO2 formed after irradiation are identified by glancing angle X-ray diffraction and Raman spectroscopy. The particle radius estimated by AFM varies from 10–13 nm. Anatase phase of TiO2 is formed after irradiation. The blue shift observed in UV-VIS absorption spectra indicates the nanostructure formation. The shape and size of nanoparticles formed due to high electronic excitation depend upon thickness of the film.


2013 ◽  
Vol 678 ◽  
pp. 108-112 ◽  
Author(s):  
Narayanaswamy Gokilamani ◽  
N. Muthukumarasamy ◽  
Mariyappan Thambidurai

Nanocrystalline titanium dioxide (TiO2) thin films have been prepared by dip coating method. The TiO2 thin films have been coated on glass substrate and annealed at 400, 450 and 500° C respectively. The X- ray diffraction pattern shows that TiO2 nanocrystalline thin films are of anatase structure and the grain size is found to be in the range of 20-35 nm. The annealed films have been observed to be nanocrystalline in nature and the crystallinity has been observed to improve on annealing. The surface topography of the films has been studied using atomic force microscope. The optical properties have been studied using transmittance spectra. The band gap has been found to lie in the range of 3.70 to 3.83 eV depending on the annealing temperature.


2012 ◽  
Vol 490-495 ◽  
pp. 3306-3310
Author(s):  
Fei Gao ◽  
Xiao Yan Liu ◽  
Li Yun Zheng ◽  
Mei Xia Li ◽  
Rui Jiao Jiang

TiO2 and Ni-doped TiO2 thin films were prepared by DC magnetron sputtering. The effects of Ni-doping on the microstructure and properties were studied by atomic force microscopy (AFM), X-ray diffraction (XRD), UV-Vis spectra and photocatalysis tesing, respectively. The results show that TiO2 thin films were successfully prepared with smooth surface. When doped with Ni, the surface of TiO2 thin film was improved and the growth of anatase phase was also promoted. With increasing the sputtering power of Ni, the absorption edge wavelegth red shifted and the photocatalysis property of TiO2 thin films was increased and then decreased


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