Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

Stability and Structural Characterization of Epitaxial NdNiO3 Films Grown by Pulsed Laser Deposition

2000 ◽  
Vol 658 ◽  
Author(s):  
Trong-Duc Doan ◽  
Cobey Abramowski ◽  
Paul A. Salvador
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Monoclinic Distortion

ABSTRACTThin films of NdNiO3 were grown using pulsed laser deposition on single crystal substrates of [100]-oriented LaAlO3 and SrTiO3. X-ray diffraction and reflectivity, scanning electron microscopy, and atomic force microscopy were used to characterize the chemical, morphological and structural traits of the thin films. Single-phase epitaxial films are grown on LaAlO3 and SrTiO3 at 625°C in an oxygen pressure of 200 mTorr. At higher temperatures, the films partially decompose to Nd2NiO4 and NiO. The films are epitaxial with the (101) planes (orthorhombic Pnma notation) parallel to the substrate surface. Four in-plane orientational variants exist that correspond to the four 90° degenerate orientations of the film's [010] with respect to the in-plane substrate directions. Films are observed to be strained in accordance with the structural mismatch to the underlying substrate, and this leads, in the thinnest films on LaAlO3, to an apparent monoclinic distortion to the unit cell.

Effects of Annealing on Pulsed Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 446-447 ◽  
pp. 306-311 ◽  
Author(s):  
Sudhanshu Dwivedi ◽  
Somnath Biswas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Morphological Studies ◽  
Atomic Force ◽  
Deposited Films ◽  
Type Crystal

Mixed phase TiO2 thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

scholarly journals Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

2015 ◽  
Vol 60 (3) ◽  
pp. 2173-2182 ◽  
Author(s):  
J. Kusiński ◽  
A. Kopia ◽  
Ł. Cieniek ◽  
S. Kąc ◽  
A. Radziszewska
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Pulsed Laser ◽  
Nanocrystalline Structure ◽  
X Ray Diffraction ◽  
Pulsed Electron Beam ◽  
Force Microscopy ◽  
Atomic Force ◽  
Basic Parameters ◽  
Selection Of

Abstract In this work the pulsed laser deposition (PLD) and the pulsed electron beam deposition (PED) techniques were used for fabrication of Mo-Bi2O3, La1−xSrxCoO3, La1−xCaxCoO3 and Al-Mg thin films. An influence of ablation process basic parameters on the coatings structure and properties was discussed. Two types of laser ablation systems were applied: one equipped with a KrF excimer and second with a Q-switched Nd:YAG. Films were deposited on Si and MgO substrates. Scanning (SEM) and transmission (TEM) electron microscopy, atomic force microscopy (AFM) as well as X-ray diffraction (XRD) were used for structural analysis. Investigations focused on structure and chemical composition showed that smooth and dense thin films with nanocrystalline structure, preserving the composition of the bulk target, could be obtained by the both PLD and PED techniques. Research study showed that by a proper selection of PLD and PED process parameters it was possible to deposit films with significantly decreased amount and size of undesirably nanoparticulates.

Semiconducting YBCO Thin Films for Uncooled Terahertz Imagers

2008 ◽  
Vol 587-588 ◽  
pp. 273-277 ◽  
Author(s):  
Mattia Longhin ◽  
Alain J. Kreisler ◽  
Annick F. Dégardin
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Sensing Element ◽  
Force Microscopy ◽  
Research Activities ◽  
Atomic Force ◽  
Ybco Thin Films ◽  
Wide Range

The terahertz domain (500 GHz - 5 THz) has been object of unceasing research activities, due to the wide range of conceivable applications in these fields. This study focuses on the development of semiconducting YBa2Cu3O6+x (YBCO) thin films to be used as sensitive elements on future uncooled terahertz imagers working on a thermal principle. YBCO thin films have been hollow-cathode sputtered on MgO single-crystals under different conditions. Electrical and structural characterizations have then been carried out. The resistivity of the thin films and the temperature coefficient of resistance (TCR) have been determined. X-ray diffraction and atomic force microscopy analyses have then been performed. If compared with materials currently used as sensing element in commercial near-infrared imagers, electrical characterization shows values of the TCR comparable to amorphous silicon and almost two times better than VOx-compounds.

The Structural and Morphology of (La0.7Sr0.3)MnO3 Thin Films Prepared by Pulsed Laser Deposition

2010 ◽  
Vol 150-151 ◽  
pp. 908-911 ◽  
Author(s):  
Wei Rao ◽  
Jun Yu
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

(La0.7Sr0.3)MnO3 (LSMO) thin films were prepared on Si (100) substrate by pulsed laser deposition (PLD). Both structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The results indicate that the films grown on Si (100) substrates have a single pseudo cubic perovskite phase structure with a high (100) orientation. The XPS results show that La, Sr and Mn exist mainly in the forms of perovskite structure and a SrO layer was found on outermost surface.

Synthesis of thin films of polycrystalline ferroelectric BiNbO4 on Si by pulsed laser ablation

1998 ◽  
Vol 13 (5) ◽  
pp. 1113-1116 ◽  
Author(s):  
Soma Chattopadhyay ◽  
Pushan Ayyub ◽  
R. Pinto ◽  
M. S. Multani
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Polycrystalline Thin Films ◽  
Ambient Oxygen

The stibiotantalite (ABO4) family includes a number of ferroelectrics and antiferroelectrics with excellent potential for applications. We report the deposition of phase-pure, polycrystalline thin films of BiNbO4 on Si(100) substrates using pulsed laser ablation. The deposition conditions were optimized with respect to substrate temperature, laser parameters, and the ambient oxygen pressure. The films were characterized by x-ray diffraction, energy dispersive x-ray analysis, and Raman spectroscopy, while their microstructure was studied by atomic force microscopy and scanning electron microscopy. Dielectric hysteresis studies indicated that films with a thickness below ≈250 nm are ferroelectric, while thicker ones are antiferroelectric.

CARBON ION IRRADIATION EFFECTS ON PULSED LASER DEPOSITED TITANIUM NITRIDE THIN FILMS

2015 ◽  
Vol 22 (02) ◽  
pp. 1550020 ◽  
Author(s):  
KHALIQ MAHMOOD ◽  
SHAZIA BASHIR ◽  
MAHREEN AKRAM ◽  
ASMA HAYAT ◽  
FAIZAN-Ul-HAQ ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Irradiation Effects ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis ◽  
Higher Doses

Pulse laser deposited thin films of TiN are irradiated by 1 MeV carbon (C+) ions beam for various doses ranging 0.4 to 2.8 × 1014 ions/cm2. Atomic force microscopy (AFM) analysis reveals the formation of hillocks like structures after ion irradiation. X-ray diffraction (XRD) investigations show that the film crystallinity increases for lower doses ranging from 0.4 to 1.2 × 1014 ions/cm2 and decreases for higher doses (2 to 2.8 × 1014 ions/cm2) of ions. No new bands are identified from Raman spectroscopy. However, a noticeable change in microhardness has been observed. The hillock densities as well as hardness are strongly dependent upon ion dose.

X-Ray Photoelectron Spectroscopy of (La0.7Sr0.3)MnO3Thin Films Prepared by Pulsed Laser Deposition

2011 ◽  
Vol 284-286 ◽  
pp. 2191-2197 ◽  
Author(s):  
Hui Fang Xiong ◽  
Tie Dong Cheng ◽  
X.G. Tang ◽  
Jian Chen ◽  
Qiu Xiang Liu
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

(La0.7Sr0.3)MnO3 (LSMO) thin films were grown on Si (100) substrate by using pulsed laser deposition (PLD) process. Both structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. From XRD, the results indicate that the films grown on Si (100) substrates have a single pseudocubic perovskite phase structure with a high (100) orientation. The XPS results show that La, Sr and Mn exist mainly in the forms of perovskite structure and a SrO layer was found on outermost surface. The films resistivity emeasured under room temperature is 6.4´10-4 W×cm.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Sign in / Sign up

Export Citation Format

Share Document