Effects of Annealing on Pulsed Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 446-447 ◽  
pp. 306-311 ◽  
Author(s):  
Sudhanshu Dwivedi ◽  
Somnath Biswas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Morphological Studies ◽  
Atomic Force ◽  
Deposited Films ◽  
Type Crystal

Mixed phase TiO2 thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

Stability and Structural Characterization of Epitaxial NdNiO3 Films Grown by Pulsed Laser Deposition

2000 ◽  
Vol 658 ◽  
Author(s):  
Trong-Duc Doan ◽  
Cobey Abramowski ◽  
Paul A. Salvador
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Monoclinic Distortion

ABSTRACTThin films of NdNiO3 were grown using pulsed laser deposition on single crystal substrates of [100]-oriented LaAlO3 and SrTiO3. X-ray diffraction and reflectivity, scanning electron microscopy, and atomic force microscopy were used to characterize the chemical, morphological and structural traits of the thin films. Single-phase epitaxial films are grown on LaAlO3 and SrTiO3 at 625°C in an oxygen pressure of 200 mTorr. At higher temperatures, the films partially decompose to Nd2NiO4 and NiO. The films are epitaxial with the (101) planes (orthorhombic Pnma notation) parallel to the substrate surface. Four in-plane orientational variants exist that correspond to the four 90° degenerate orientations of the film's [010] with respect to the in-plane substrate directions. Films are observed to be strained in accordance with the structural mismatch to the underlying substrate, and this leads, in the thinnest films on LaAlO3, to an apparent monoclinic distortion to the unit cell.

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

scholarly journals Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

2015 ◽  
Vol 60 (3) ◽  
pp. 2173-2182 ◽  
Author(s):  
J. Kusiński ◽  
A. Kopia ◽  
Ł. Cieniek ◽  
S. Kąc ◽  
A. Radziszewska
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Pulsed Laser ◽  
Nanocrystalline Structure ◽  
X Ray Diffraction ◽  
Pulsed Electron Beam ◽  
Force Microscopy ◽  
Atomic Force ◽  
Basic Parameters ◽  
Selection Of

Abstract In this work the pulsed laser deposition (PLD) and the pulsed electron beam deposition (PED) techniques were used for fabrication of Mo-Bi2O3, La1−xSrxCoO3, La1−xCaxCoO3 and Al-Mg thin films. An influence of ablation process basic parameters on the coatings structure and properties was discussed. Two types of laser ablation systems were applied: one equipped with a KrF excimer and second with a Q-switched Nd:YAG. Films were deposited on Si and MgO substrates. Scanning (SEM) and transmission (TEM) electron microscopy, atomic force microscopy (AFM) as well as X-ray diffraction (XRD) were used for structural analysis. Investigations focused on structure and chemical composition showed that smooth and dense thin films with nanocrystalline structure, preserving the composition of the bulk target, could be obtained by the both PLD and PED techniques. Research study showed that by a proper selection of PLD and PED process parameters it was possible to deposit films with significantly decreased amount and size of undesirably nanoparticulates.

scholarly journals PREPARATION AND CHARACTERIZATION OF CDO-NIO NANOCOMPOSITES USING LASER PULSE DEPOSITION APPROACH

2021 ◽  
Vol 03 (03) ◽  
pp. 01-09
Author(s):  
Khamees D. MAHMOOD ◽  
Kadhim A. AADIM ◽  
Mohammed G. HAMMED
Keyword(s):  
Laser Pulse ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pulse Deposition ◽  
Deposited Films

In this manuscript, CdO-NiO nanocomposites (in the form of thin film) with particular concentrations are paper using laser pulse deposition technique under the effect of different laser energies (300, 400, 500, and 600 mJ). Furthermore, the structural, morphological, and optical analyses are thoroughly investigated. In particular, well-oriented deposited films are observed by using X-ray diffraction technique, while the morphological properties are investigated using two different techniques namely field emission scanning electron microscopy and atomic force microscopy which have revealed small nanoparticles with approximate diameter of 50 nm and average surface roughness ranging between 6.5 and 20.3 nm for laser energies of 400 and 600 mJ, respectively. Continuously, the optical technique applied which used UV-Vis analysis has showed cut-off phenomenon at around 339 nm. In the meanwhile, the energy band gap for the deposited films was found to be within the range of 2.2 and 2.4 eV, as a result of different laser energies.

A Structural Study of SrBi2Ta2O9 - Bi3TiNbO9 Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
P. S. Dobalt ◽  
R. S. Katiyart ◽  
S. Tirumala ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Metal Organic

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1-x layered structure (for x = 0.0, 0.2, … 1.0) were prepared by a metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. Raman spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and electrical characterization techniques were utilized to study the inclusion of SrBi2Ta2O9 (SBT) in the Bi3TiNbO9 (BTN) system. The Raman spectra show frequency shifts and broadening of modes as x increases from 0.0 to 0.4, which are related to the nature of Sr and Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. Smooth surfaces without any cracks or defects were evidenced in each of these films by AFM. These images also indicate that the grain size in the films increases with increasing SBT content in the BTN compound. Electrical measurements show that the remanent polarization (Pr) and the coercive field (Ec) values in the x=0.0 film (2 μC/cm2 and 30 kV/cm, respectively) increase to 12.5 μC/cm2 and 125 kV/cm for x=0.6. A decrease in these parameters was found for higher compositions.

Characterization of sputtered iridium dioxide thin films

1998 ◽  
Vol 13 (5) ◽  
pp. 1318-1326 ◽  
Author(s):  
P. C. Liao ◽  
W. S. Ho ◽  
Y. S. Huang ◽  
K. K. Tiong
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Rf Sputtering ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Iridium Dioxide ◽  
Atomic Force ◽  
Average Grain Size

Iridium dioxide (IrO2) thin films, deposited on Si substrates by reactive rf sputtering method under various conditions, were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), electrical-conductivity, spectrophotometry, ellipsometry and Raman scattering measurements. The average grain sizes of the films were estimated by AFM. A grain boundary scattering model was used to fit the relation between the average grain size and electrical resistivity. The optical and dielectric constants were determined by the ellipsometry measurements. The results of the electrical and optical studies show a metallic character of the films deposited at higher temperatures. The results of XRD and Raman scattering indicate that the IrO2 films deposited at temperatures higher than 300 °C show the presence of (200) texture.

PREPARATION AND FERROELECTRIC PROPERTIES OF LEAD-FREE A0.5Bi0.5TiO3 (A = Na OR K) THIN FILMS

2011 ◽  
Vol 18 (03n04) ◽  
pp. 121-125 ◽  
Author(s):  
Y. L. DING ◽  
X. H. ZHANG ◽  
C. H. YANG ◽  
X. Y. ZHANG ◽  
H. L. YANG
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Dielectric Constants ◽  
Lead Free ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Surface Morphologies

Both ferroelectric Na0.5Bi0.5TiO3 (NBT) and K0.5Bi0.5TiO3 (KBT) are considered as the best known lead-free materials. In this experiment, we prepared NBT and KBT thin films on Pt/TiO2/SiO2/Si substrates by metalorganic solution deposition. The structural properties and surface morphologies were measured using X-ray diffraction and atomic force microscopy. The NBT and KBT films show higher leakage currents due to the oxygen vacancies in the films. The remanent polarization and coercive field of NBT (KBT) thin film are 9 (5.2) μC/cm2 and 50 (25) kV/cm at an applied electric field of 150 kV/cm. The relative dielectric constants of NBT and KBT are 340 and 316 at 1 MHz, respectively.

Effect of Ti Sputtering Current on Structure of TiCrN Thin Films Prepared by Reactive DC Magnetron Co-Sputtering

2016 ◽  
Vol 675-676 ◽  
pp. 181-184 ◽  
Author(s):  
Nirun Witit-Anun ◽  
Amphol Teekhaboot
Keyword(s):  
Thin Films ◽  
Crystal Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Lattice Constants ◽  
Atomic Force ◽  
Glancing Angle ◽  
Deposited Films ◽  
Section Analysis

Titanium chromium nitride (TiCrN) thin films were deposited by reactive DC magnetron co-sputtering. The effect of Ti sputtering current (ITi) on the structure of the TiCrN thin films were investigated. The crystal structure, microstructure, thickness, roughness and elemental composition were characterized by glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited films exhibited a nanostructure with a crystallite size of less than 40 nm. The crystal size decreased from 39.9 nm to 33.5 nm, while the lattice constants increased from 4.139 Å to 4.162 Å, with increasing of the Ti sputtering current. The film thickness and roughness were found to increase from 397 nm to 615 nm and 3.7 nm to 6.3 nm, respectively, with increasing of the Ti sputtering current. The composition of the as-deposited films varied with the Ti sputtering current. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the Ti sputtering current.

STRUCTURE AND PHOTOLUMINESCENT PROPERTIES OF SiCO THIN-FILMS DOPED WITH Al PREPARED BY DUAL MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (16) ◽  
pp. 2149-2156
Author(s):  
JICHENG ZHOU ◽  
XUQIANG ZHENG ◽  
ZHIJIE SHI ◽  
BAOXING ZHAO ◽  
FU LIU ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Dispersive Spectrometer ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Related Defect ◽  
Amorphous Sic

SiCO thin-films doped with aluminum (Al) prepared by alternate deposition of SiC and Al thin layers using Ar and O 2 as sputtering gas were deposited on n- Si substrates. The as-deposited thin-films were annealed under 600°C in nitrogen ambient. The thin-films have been characterized by atomic force microscopy, energy dispersive spectrometer, X-ray diffraction, fourier transform infrared spectroscopy, and photoluminescence spectra. The results showed that the introduction of Al promotes the formation of Si — C bonds, but hinders amorphous SiC to further transform to crystalline SiC . The doped Al would react with SiO x in the thin-films to form more Si particles which strongly affect the optical properties. After Al doped, there presented a seven times of enhancement emission band centered around 412 nm, which is ascribed to nanostructure Si -related defect centers embedded in the SiCO thin-films. The obtained results are expected to have important applications in modern optoelectronic devices.

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