In-situ Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances

2012 ◽  
Vol 1426 ◽  
pp. 307-311 ◽  
Author(s):  
Yeonwon Kim ◽  
Kosuke Hatozaki ◽  
Yuji Hashimoto ◽  
Hyunwoong Seo ◽  
Giichiro Uchida ◽  
...  
Keyword(s):  
Thin Films ◽  
Quartz Crystal ◽  
Volume Fraction ◽  
In Situ Measurements ◽  
Film Deposition ◽  
Silicon Clusters ◽  
Deposition Rates ◽  
Silicon Thin Films ◽  
Quartz Crystal Microbalances

ABSTRACTWe have carried out in-situ measurements of cluster volume fraction in silicon films during deposition by using quartz crystal microbalances (QCM’s) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from in-situ measurements of film deposition rates with and without silicon clusters using QCM’s. The results show that the higher deposition rate leads to the higher volume fraction of clusters.

scholarly journals In situ measurements of stress evolution in silicon thin films during electrochemical lithiation and delithiation

2010 ◽  
Vol 195 (15) ◽  
pp. 5062-5066 ◽  
Author(s):  
Vijay A. Sethuraman ◽  
Michael J. Chon ◽  
Maxwell Shimshak ◽  
Venkat Srinivasan ◽  
Pradeep R. Guduru
Keyword(s):  
Thin Films ◽  
In Situ Measurements ◽  
Stress Evolution ◽  
Silicon Thin Films ◽  
Electrochemical Lithiation

Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Optical Transmission ◽  
Film Deposition ◽  
Transmission Measurement ◽  
Conductive Heat ◽  
Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

scholarly journals Use of diffusive gradient in thin films for in situ measurements: A review on the progress in chemical fractionation, speciation and bioavailability of metals in waters

2017 ◽  
Vol 983 ◽  
pp. 54-66 ◽  
Author(s):  
Amauri Antonio Menegário ◽  
Lauren N. Marques Yabuki ◽  
Karen S. Luko ◽  
Paul N. Williams ◽  
Daniel M. Blackburn
Keyword(s):  
Thin Films ◽  
In Situ Measurements ◽  
Chemical Fractionation

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

In situ study of porous silicon thin films thermal oxidation by pulsed laser photoacoustics

2018 ◽  
Vol 33 (8) ◽  
pp. 085001
Author(s):  
Atzin David Ruíz Pérez ◽  
M B de la Mora ◽  
J L Benítez ◽  
R Castañeda-Guzmán ◽  
Jorge Alejandro Reyes-Esqueda ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Thermal Oxidation ◽  
Pulsed Laser ◽  
In Situ Study ◽  
Silicon Thin Films
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