Uni-axial Cracking of ITO to Form Row and Column Electrodes for Roll to Roll Production of Flexible Displays and Electronics

2013 ◽  
Vol 1529 ◽  
Author(s):  
John Lawton West ◽  
Miko Cakmak ◽  
Tsang-Min Huang ◽  
Da-Wei Lee

ABSTRACTUniformly uni-axially aligned electrodes are formed by uniaxially cracking an indium tin oxide, ITO, film vacuum deposited on a polyester substrate. The cracks are produced by bending the film around a small radius of curvature, producing narrow, parallel cracks in the ITO separated by 5-10 μm. The cracks are enhanced by etching or uniaxial stretching. Heating and stretching is the most effective, producing a crack width of about 0.05 μm and a differential conductivity (measured parallel and perpendicular to the cracks) several orders of magnitude or greater. A passive matrix bistable cholesteric display is fabricated using top and bottom substrates with perpendicularly aligned electrodes. The addressed lines on each substrate are defined by the contact electrode, which contacts multiple cracked ITO lines. Because of the small dimension of the cracks (much less than the thickness of the active layer) they are not visible in the display. The separation between the contact electrodes must be great than 20 μm in order to include at least one crack and electrically isolate each individual line. The resulting display demonstrates how controlled cracking of ITO can replace photolithographic etching of ITO or printing of conducting polymers to produce the line electrodes required for flexible, passive matrix displays and related electronic applications. Un-axially cracking can be easily integrated into a roll-to-roll manufacturing process.

Author(s):  
Chang-Chun Lee ◽  
Pei-Chen Huang ◽  
Chi-Wei Wang ◽  
Oscar Chuang

Abstract Fatigue behavior of multiple-stacked film-type flexible displays under flexural load has received considerable research attention, whereas the requirement of a considerably thin and flexible packaging structure with single/multiple neutral axis has not been systemically explored. Consequently, this study evaluated the flexural load induced strain and corresponding resistance change in flexible display architecture by both experimental and simulation works. The relationship between mechanical strains and the relevant resistance change in a touch panel module is estimated by both nonlinear finite element analysis and actual experiments. The aforementioned results revealed that the simulated strain and the resistance change of indium tin oxide (ITO) film were increased as the bending radius becomes narrow. Moreover, the influences of several mechanical parameters within an entire organic light-emitting diode device package with multiple coatings were estimated by a simulation-based parametric study. It should be noted that the structure design would lead the single/multiple neutral axis (N.A.) occurred in the concerned flexible displays. Among all the designed structural and material properties, the Young’s modulus of the adhesive is the most dominant factor to determine the bending strain of ITO film and the phenomenon occurrence of multiple N.A. The analytic results indicated that the multiple N.A. design is contributed to decrease the flexural strain and corresponding resistance change of ITO film. Therefore, the design rules of single/multiple N.A. and its influences on stress-induced electric variation in flexible display are revealed.


2004 ◽  
Vol 814 ◽  
Author(s):  
Jay Lewis ◽  
Sonia Grego ◽  
Erik Vick ◽  
Babu Chalamala ◽  
Dorota Temple

AbstractThe use of brittle materials in flexible displays requires the understanding of the mechanical limitations of the materials and the various display architectures. We discuss various approaches to mechanical bend tests for components of flexible displays and describe a new test method based on a three-axis motion. We discuss the mechanical limitations of indium tin oxide (ITO) as a transparent conductor, and present results for a more mechanically robust multilayer transparent conductor made of an ITO-metal-ITO (IMI) stack. The IMI structures showed dramatically improved mechanical properties when subjected to bending both as a function of radius of curvature as well as number of cycles to a fixed radius. Organic light emitting devices fabricated on IMI anodes showed improved performance compared with those made on ITO anodes at current densities greater than 1 mA/cm2 due to the improved conductivity of the anode. We discuss the difficulties in analysis of the mechanical failure of transparent thin film permeation barriers. We present a novel approach for etching barrier-coated polymer substrates such that film cracking is readily visible. We report on the bend test results for sputter- deposited SiOxNy films.


2014 ◽  
Vol 526 ◽  
pp. 15-20 ◽  
Author(s):  
John L. West ◽  
Da Wei Lee

Vacuum deposited indium tin oxide, ITO, is the material of choice for producing the transparent conducting electrodes used in a wide variety of electro-optic applications, including flat panel displays and solar cells. In addition to rigid substrates such as glass, ITO can be coated on flexible substrates for the production of flexible devices. Because the ITO is brittle it easily cracks if the flexible substrates are bent. The cracking of the ITO is therefore viewed within the industry as a major problem. Here we demonstrate how we can control the cracking of the ITO to produce uniform electrodes. This is accomplished by bending the film around a tight radius of curvature. The electrodes are narrow having a width of 5~10 μm. The cracks separating the electrodes are much narrower with a width of less than 0.05 μm. We demonstrate the use of these substrates using a polymer dispersed liquid crystal switchable window that can be switched in individual lines creating an electronic venetian blind effect. The addressed lines in the PDLC are defined by the contact electrode and by the applied field. Because the cracks are much smaller than the thickness of the active PDLC material they are not visible. In addition to switchable windows these substrates can be used to make passive matrix displays and touch screens. Uni-axially cracking can be easily integrated into a roll-to-roll manufacturing process.


2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.


Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 408
Author(s):  
Wen-Ching Hsieh ◽  
Fun-Cheng Jong ◽  
Wei-Ting Tseng

This research demonstrates that an indium tin oxide–silicon oxide–hafnium aluminum oxide‒silicon oxide–silicon device with enhanced UV transparency ITO gate (hereafter E-IOHAOS) can greatly increase the sensing response performance of a SONOS type ultraviolet radiation total dose (hereafter UV TD) sensor. Post annealing process is used to optimize UV optical transmission and electrical resistivity characterization in ITO film. Via nano-columns (NCols) crystalline transformation of ITO film, UV transparency of ITO film can be enhanced. UV radiation causes the threshold voltage VT of the E-IOHAOS device to increase, and the increase of the VT of E-IOHAOS device is also related to the UV TD. The experimental results show that under UV TD irradiation of 100 mW·s/cm2, ultraviolet light can change the threshold voltage VT of E-IOHAOS to 12.5 V. Moreover, the VT fading rate of ten-years retention on E-IOHAOS is below 10%. The VT change of E-IOHAOS is almost 1.25 times that of poly silicon–aluminum oxide–hafnium aluminum oxide–silicon oxide–silicon with poly silicon gate device (hereafter SAHAOS). The sensing response performance of an E-IOHAOS UV TD sensor is greatly improved by annealed ITO gate.


2007 ◽  
Vol 38 (1) ◽  
pp. 1790-1793 ◽  
Author(s):  
Karpagavalli Ramji ◽  
Darran R. Cairns ◽  
Kostas A. Sierros ◽  
Stephen N. Kukureka

2002 ◽  
Vol 41 (Part 2, No. 2A) ◽  
pp. L115-L117 ◽  
Author(s):  
Shoou-Jinn Chang ◽  
Yan-Kuin Su ◽  
Wen-Ray Chen ◽  
Jone F. Chen ◽  
Ming-Hong Chen ◽  
...  

2000 ◽  
Vol 370 (1-2) ◽  
pp. 155-162 ◽  
Author(s):  
T. Nakao ◽  
T. Nakada ◽  
Y. Nakayama ◽  
K. Miyatani ◽  
Y. Kimura ◽  
...  

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