Influence of Nitrogen Species on InN Grown by PAMBE

Active nitrogen species produced by an Oxford Applied Research HD-25 plasma source have been monitored by optical emission spectroscopy and quadrapole mass spectroscopy. Both techniques confirmed that at higher RF powers and lower flow rates the efficiency of atomic nitrogen production increased; emission spectroscopy confirmed that this was at the expense of active molecular nitrogen (N2*). InN films grown on (0001) sapphire/GaN with higher relative molecular content were found to have lower carrier concentrations than the corresponding films grown with higher atomic content. However, electrical properties of films grown on (111) YSZ showed insensitivity to the active nitrogen content. Etching experiments revealed that films grown on sapphire/GaN were nitrogen-polar, while films grown on YSZ were In-polar, suggesting that film polarity can greatly influence the effect active species have on growth. Lattice relaxation, as measured by reflection high-energy electron diffraction, revealed that the N-polar films grown under high relative molecular flux relaxed fully after ∼60 nm of growth, while the corresponding In-polar film relaxed fully within the first several nm of growth.