Growth of AlN and TiN Structures by Plasma-Enhanced Pulsed Laser Deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
Edward Poindexter ◽  
Yan Xin ◽  
Steven M. Durbin
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Plasma Source ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
High Energy ◽  
Film Deposition ◽  
Rf Plasma ◽  
Nitrogen Species ◽  
Active Nitrogen

AbstractNitride materials are of interest for a wide variety of applications, including wear-resistant coatings, insulating layers, high-temperature semiconductor devices, and short-wavelength emitters and detectors. TiN and AlN appear to be particularly amenable to crystalline thin film deposition, with stoichiometric material easily obtained even without the use of active nitrogen species. This paper describes the growth of crystalline AlN and TiN thin films on silicon and sapphire substrates using a KrF excimer laser (λ = 248 nm) to ablate elemental metallic targets, and an inductively-coupled RF plasma source to supply active nitrogen species. Growth was monitored in-situ using reflection high-energy electron diffraction (RHEED), and films were characterised using fourier-transform infrared spectroscopy (FTIR) and electron microscopy techniques. Optimised growth conditions led to single-crystal growth of TiN on both substrates, but only polycrystalline AlN was formed directly. Use of a TiN buffer layer on (0001) sapphire led to the successful growth of a single-crystal AlN layer as confirmed by RHEED and high-resolution transmission electron microscopy (HRTEM).

Thin Coating Deposition by Magnetron Sputtering

2018 ◽  
pp. 403-428 ◽  
Author(s):  
Peter Ifeolu Odetola ◽  
Patricia A. P. Popoola ◽  
Philip Oladijo
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Film Formation ◽  
Semiconductor Industry ◽  
Target Material ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
High Energy ◽  
Film Deposition ◽  
Atomic Scale

Advances in thin-film deposition expose new frontiers to structures and phases that are inaccessible by conventional chemical means and have led to innovative modification of existing materials' properties. Thin-film deposition by magnetron sputtering is highly dependent on ion bombardments; coupled with sublimation of solid target unto the substrate through momentum transfer. It is summarily base on phase change of target material under high-energy influence; corresponding controlled condensation of sputtered atoms on substrate material during which process parameters and growth conditions dictate the pace of the atomic scale processes for thin-film formation. Magnetron sputtering is a state-of-the-art thin film deposition technique versatile for several unique applications, especially in the semiconductor industry. Magnetron sputtering is very novel in its use to achieve low-pressure condition that maximizes and conserve stream of electrons for effective knocking of inert atoms into ions. This ensures the high-energy acquired is not dissipated in gas-phase collisions.

Influence of Nitrogen Species on InN Grown by PAMBE

2005 ◽  
Vol 892 ◽  
Author(s):  
P. A. Anderson ◽  
R. J. Kinsey ◽  
C. E. Kendrick ◽  
I. Farrel ◽  
D. Carder ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Molecular Nitrogen ◽  
Optical Emission ◽  
Lattice Relaxation ◽  
Plasma Source ◽  
High Energy ◽  
Active Species ◽  
Nitrogen Species ◽  
Active Nitrogen ◽  
Molecular Flux

AbstractActive nitrogen species produced by an Oxford Applied Research HD-25 plasma source have been monitored by optical emission spectroscopy and quadrapole mass spectroscopy. Both techniques confirmed that at higher RF powers and lower flow rates the efficiency of atomic nitrogen production increased; emission spectroscopy confirmed that this was at the expense of active molecular nitrogen (N2*). InN films grown on (0001) sapphire/GaN with higher relative molecular content were found to have lower carrier concentrations than the corresponding films grown with higher atomic content. However, electrical properties of films grown on (111) YSZ showed insensitivity to the active nitrogen content. Etching experiments revealed that films grown on sapphire/GaN were nitrogen-polar, while films grown on YSZ were In-polar, suggesting that film polarity can greatly influence the effect active species have on growth. Lattice relaxation, as measured by reflection high-energy electron diffraction, revealed that the N-polar films grown under high relative molecular flux relaxed fully after ∼60 nm of growth, while the corresponding In-polar film relaxed fully within the first several nm of growth.

scholarly journals Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE

1996 ◽  
Vol 449 ◽  
Author(s):  
S. Ruvimov ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
T. J. Drummond ◽  
M. Hafish ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Plasma Source ◽  
High Resolution Electron Microscopy ◽  
Growth Conditions ◽  
Rf Plasma ◽  
Wurtzite Phase ◽  
Active Nitrogen ◽  
Resolution Electron ◽  
Cubic Gan

ABSTRACTHigh resolution electron microscopy has been applied to characterize the structure of β-GaN epilayers grown on (001) GaAs substrates by plasma-assisted molecular-beam-epitaxy. The rf plasma source was used to promote chemically active nitrogen. The layer quality was shown to depend on growth conditions (Ga flux and N2 flow for fixed rf power). The best quality of GaN layers was achieved by “stoichiometric” growth; Ga-rich layers contain a certain amount of the wurtzite phase. GaN layers contain a high density of stacking faults which drastically decreases toward the GaN surface. Stacking faults are anisotropically distributed in the GaN layer; the majority intersect the interface along lines parallel to the “major flat” of the GaAs substrate. This correlates well with the observed anisotropy in the intensity distribution of x-ray reflexions. Formation of stacking faults are often associated with atomic steps at the GaN-GaAs interfaces.

Experiments on REM and SREM using a Tem/Stem Microscope with a Configurable Angle-Resolving Detector

1990 ◽  
Vol 48 (1) ◽  
pp. 338-339
Author(s):  
H. Banzhof ◽  
I. Daberkow
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Crystal Surface ◽  
High Energy ◽  
Contrast Effects ◽  
Atomic Steps ◽  
Single Crystal Surfaces ◽  
Platinum Single Crystal ◽  
Reflection Electron Microscopy ◽  
Beam Reflection

A Philips EM 420 electron microscope equipped with a field emission gun and an external STEM unit was used to compare images of single crystal surfaces taken by conventional reflection electron microscopy (REM) and scanning reflection electron microscopy (SREM). In addition an angle-resolving detector system developed by Daberkow and Herrmann was used to record SREM images with the detector shape adjusted to different details of the convergent beam reflection high energy electron diffraction (CBRHEED) pattern.Platinum single crystal spheres with smooth facets, prepared by melting a thin Pt wire in an oxyhydrogen flame, served as objects. Fig. 1 gives a conventional REM image of a (111)Pt single crystal surface, while Fig. 2 shows a SREM record of the same area. Both images were taken with the (555) reflection near the azimuth. A comparison shows that the contrast effects of atomic steps are similar for both techniques, although the depth of focus of the SREM image is reduced as a result of the large illuminating aperture. But differences are observed at the lengthened images of small depressions and protrusions formed by atomic steps, which give a symmetrical contrast profile in the REM image, while an asymmetric black-white contrast is observed in the SREM micrograph. Furthermore the irregular structures which may be seen in the middle of Fig. 2 are not visible in the REM image, although it was taken after the SREM record.

scholarly journals Multivariate Correlation Analysis of the Electroconductive Textiles Obtained Using Functionalization by Radio-Frequency Oxygen Plasma Treatments

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5609
Author(s):  
Raluca Maria Aileni ◽  
Laura Chiriac ◽  
Doina Toma ◽  
Irina Sandulache
Keyword(s):  
Thin Film ◽  
Correlation Analysis ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Plasma ◽  
Multivariate Correlation ◽  
Hydrophilic Character ◽  
Fabric Surface ◽  
O2 Plasma ◽  
Multivariate Correlation Analysis

This paper presents a study concerning the preliminary treatments in radiofrequency (RF)oxygen (O2) plasma used to obtain a hydrophilic effect on raw cotton fabrics followed by electroconductive thin film deposition to obtain electroconductive textile surfaces. In addition, this study presents a multivariate correlation analysis of experimental parameters. The treatment using RF plasma O2 aimed to increase the hydrophilic character of the raw fabric and adherence of paste-based polymeric on polyvinyl alcohol (PVA) matrix and nickel (Ni), silver (Ag) or copper (Cu) microparticles. The purpose of the research was to develop electroconductive textiles for flexible electrodes, smart materials using a clean technology such as radiofrequency (RF) plasma O2 to obtain a hydrophilic surface with zero wastewater and reduced chemicals and carbon footprint. To achieve the foreseen results, we used advanced functionalization technologies such as RF plasma O2, followed by scraping a thin film of conductive paste-based Ni, Ag or Cu microparticles, and multivariate correlation methods to observe the dependence between parameters involved (dependent and independent variables). Overall, the fabrics treated in plasma with O2 using a kHz or MHz generator and power 100–200 W present an excellent hydrophilic character obtained in 3 min. After RF O2 plasma functionalization, a thin film based on polymeric matrix PVA and Ni microparticles have been deposited on the fabric surface to obtain electroconductive materials.

Radio frequency expanding plasmas at low, intermediate, and atmospheric pressure and their applications

2008 ◽  
Vol 80 (9) ◽  
pp. 1919-1930 ◽  
Author(s):  
Gheorghe Dinescu ◽  
Eusebiu R. Ionita
Keyword(s):  
Radio Frequency ◽  
Atmospheric Pressure ◽  
Thin Film Deposition ◽  
Plasma Jets ◽  
Film Deposition ◽  
High Mass ◽  
Rf Plasma ◽  
Temperature Sensitive ◽  
Large Size ◽  
Wide Range

We report on the operation and characteristics of radio frequency (RF) plasma beam sources based on the expansion of the discharge outside of limited spaces with small interelectrode gaps. The appropriate electrode configuration, combined with high mass flow values and appropriate power levels, leads to small- or large-size plasma jets, working stably at low, intermediate, and atmospheric pressures. The sources are promising tools for a wide range of applications in thin film deposition, surface modification, and cleaning, including the case of temperature-sensitive substrates.

Carbon - silicon heterojunction diodes formed by CH4/ Ar rf plasma thin film deposition on Si substrates

1989 ◽  
Vol 162 ◽  
Author(s):  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
A. Putnis ◽  
K. K. Chan ◽  
K. J. Clay ◽  
...  
Keyword(s):  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Plasma ◽  
Type I ◽  
Si Substrates ◽  
Semiconducting Properties ◽  
Electrical Breakdown Strength ◽  
Poly Crystalline Diamond

ABSTRACTThin C films deposited from a CH4/Ar plasma on Si substrates kept at 20C are shown to be semiconducting. The semiconducting properties are associated with the poly-crystalline diamond grains present within the films. Diode type I-V characteristics observed from AVC/Si verticle structures are explained by the action of a C-Si heterojunction. A band gap of 2eV, a resistivity of 106Ω.cm and an electrical breakdown strength of 5.106 V/cm are estimated for the C.

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