NiSi Nanowires and Nanobridges Formed by Metal-Induced Growth

2005 ◽  
Vol 901 ◽  
Author(s):  
Joondong Kim ◽  
Dongho Lee ◽  
Wayne A Anderson
Keyword(s):  
Solid State ◽  
Ohmic Contact ◽  
Solid State Reaction ◽  
Building Block ◽  
Low Temperatures ◽  
Optical Lithography ◽  
The Self ◽  
Metal Induced Growth ◽  
Lift Off ◽  
Nanoscale Building Block

AbstractNickel monosilicide (NiSi) nanowires (NWs) were fabricated by metal-induced growth at 575 °C. The solid-state reaction of Ni and Si provides linear grown NWs. The parallel grown NW forms a nanobridge (NB) across a trench, patterned with a simple optical lithography and metal lift-off method. The Ni pads gave a good Ohmic contact without affecting the I-V transport characteristics through a NB. The metallic NB, 2.73 µm in length and 50 nm in diameter, gave a low resistance of 148 . The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of ‘self and direct’ assembled ‘bottom-up’ fabrication concepts.

Study of the reaction mechanism between electroless Ni–P and Sn and its effect on the crystallization of Ni–P

2003 ◽  
Vol 18 (1) ◽  
pp. 4-7 ◽  
Author(s):  
Y. C. Sohn ◽  
Jin Yu ◽  
S. K. Kang ◽  
W. K. Choi ◽  
D. Y. Shih
Keyword(s):  
Reaction Mechanism ◽  
Solid State ◽  
Solid State Reaction ◽  
Crystallization Temperature ◽  
Low Temperatures ◽  
Transformation Temperature ◽  
The Self ◽  
Heat Of Reaction ◽  
Solder Reaction ◽  
Electroless Ni

The reaction mechanism between electroless Ni–P and Sn was investigated to understand the effects of Sn on solder reaction-assisted crystallization at low temperatures as well as self-crystallization of Ni–P at high temperatures. Ni3Sn4 starts to form in a solid-state reaction well before Sn melts. Heat of reaction for Ni3Sn4 was measured during the Ni–P and Sn reaction (241.2 J/g). It was found that the solder reaction not only promotes crystallization at low temperatures by forming Ni3P in the P-rich layer but also facilitates self-crystallization of Ni–P by reducing the transformation temperature and heat of crystallization. The presence of Sn reduces the self-crystallization temperature of Ni–P by about 10 °C. The heat of crystallization also decreases with an increased Sn thickness.

Spontaneous Growth of Nickel Silicide Nanowires and Formation of Self-Assembled Nanobridges by the Metal Induced Growth Method

2005 ◽  
Vol 872 ◽  
Author(s):  
Joondong Kim ◽  
Wayne A. Anderson ◽  
Young-Joo Song
Keyword(s):  
Low Temperatures ◽  
Nickel Silicide ◽  
Dc Magnetron Sputtering ◽  
Growth Property ◽  
Growth Method ◽  
Self Assembled ◽  
Metal Induced Growth ◽  
Lift Off ◽  
Si Wafer ◽  
Sputtering System

AbstractNickel monosilicide (NiSi) nanowires (NWs) have been fabricated by the metal induced growth (MIG) method. Ni as a catalyst was deposited on a SiO2 coated Si wafer. In a DC magnetron sputtering system, the Ni reacts at 575°C with sputtered Si to give nanowires. Different metal catalysts (Co and Pd) were used to prove the MIG NW growth mechanism. NiSi NWs were a single crystal structure, 20-80 nm in diameter and 1-10 μm in length. The linear NW growth property provided nanobridge formation in a trenched Si wafer. The trenches in a Si wafer were made by dry etching and a simple, conventional metal lift off method. The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of ‘self and direct’ assembled ‘bottom-up’ fabrication concepts.

Solid-state reaction of electroplated thin film Au/Sn couple at low temperatures

2015 ◽  
Vol 619 ◽  
pp. 325-331 ◽  
Author(s):  
H. Xu ◽  
V. Vuorinen ◽  
H. Dong ◽  
M. Paulasto-Kröckel
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reaction ◽  
Low Temperatures

Self-assembly process under a solid-state reaction of β-Si3N4/austenitic stainless-steel composites: stirring conditions and material texture

2021 ◽  
pp. 002199832110573
Author(s):  
Fumio Munakata ◽  
Kazuya Ookubo ◽  
Mariko Takeda ◽  
Yoshihiro Sato ◽  
Yuka Mizukami ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Solid State ◽  
Solid State Reaction ◽  
Self Assembly ◽  
The Self ◽  
Assembly Process ◽  
Diffusion Limited Aggregation ◽  
Material Texture ◽  
Microstructural Morphology ◽  
Additive Particle

In the self-assembly process of β-Si3N4 (SN)/316L stainless-steel (SUS316L) composite materials tailored via sintering of powder mixtures, the formation of a SN agglomerate resulting from condensation–dispersion reactions during the stirring of SN/SUS316L was found to play an important role in improving the thermal conductivity. Moreover, the obtained SN secondary particle groups connected to form a network through diffusion-limited aggregation. In particular, it was shown that the sample prepared at the milling speed of 150 r/min has a similar particle group area (about 1.38 μm2) to that at 120 r/min, but a higher κ (increased from 9.5 W m−1 K−1 to 11.5 W m−1 K−1). To quantitatively evaluate the microstructural morphology of the texture of the self-assembled composite material, global parameters τ( q) and D q and local parameters α( q) and f( α) were determined via multifractal analysis. These characteristics of the anisotropy, dispersion, and cohesiveness of the particle network in the material texture could be analyzed together with the capacity dimension D0, information dimension D1 (configuration entropy), correlation dimension D2, and α( q) (related to internal energy). The results suggest that α( q) reflects the differences in the cohesion of the additive particle agglomeration that constitutes the self-assembly process under the solid-state reaction.

scholarly journals Evolution of Interfacial Features of MnO-SiO2 Type Inclusions/Steel Matrix during Isothermal Heating at Low Temperatures

2019 ◽  
Vol 38 (2019) ◽  
pp. 347-353 ◽  
Author(s):  
Xueliang Zhang ◽  
Shufeng Yang ◽  
Jingshe Li ◽  
Chengsong Liu ◽  
Wei-xing Hao
Keyword(s):  
Heat Treatment ◽  
Solid State ◽  
Solid State Reaction ◽  
Low Temperatures ◽  
Heating Temperature ◽  
Heating Time ◽  
Steel Matrix ◽  
Isothermal Heating ◽  
Precipitation Zone ◽  
Wagner Equation

AbstractTo clarify the evolution of interfacial features between MnO-SiO2 type inclusions and Si-Mn killed steel during isothermal heating at low temperatures, two diffusion couple samples were investigated under heat treatment at 1173 K and 1273 K, respectively. The experimental results show that the diffusion of oxygen from the oxide to the alloy is the restrictive link of the solid-state reaction between MnO-SiO2-FeO oxide and steel matrix at low heating temperatures. With increasing heating time or temperature, more FeO in the oxide decomposed, and the resulting oxygen diffused into the alloy and reacted with Mn and Si elements. The critical heating temperature at which the interfacial reaction can occur was determined to be 1173 K. And a dynamic model that predicts the change in the width of the particles precipitation zone at low temperatures was also established based on Wagner equation.

A regime of the solid-state reaction in the self-propagating high-temperature synthesis

2000 ◽  
Vol 45 (5) ◽  
pp. 205-207
Author(s):  
M. A. Korchagin ◽  
T. F. Grigor’eva ◽  
A. P. Barinova ◽  
N. Z. Lyakhov
Keyword(s):  
High Temperature ◽  
Solid State ◽  
Solid State Reaction ◽  
The Self ◽  
Temperature Synthesis ◽  
High Temperature Synthesis

Determination of the Self-Diffusion Coefficient of Ni2+in La2NiO4+δby the Solid State Reaction Method

2012 ◽  
Vol 159 (6) ◽  
pp. B702-B708 ◽  
Author(s):  
Nebojša Čebašek ◽  
Reidar Haugsrud ◽  
Jovan Milošević ◽  
Zuoan Li ◽  
Jens B. Smith ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Solid State ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
The Self ◽  
Reaction Method ◽  
Self Diffusion ◽  
Self Diffusion Coefficient

The wustite-spinel interface

1987 ◽  
Vol 45 ◽  
pp. 268-269
Author(s):  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Strain Energy ◽  
Matrix Material ◽  
Lattice Misfit ◽  
Solid State Reactions ◽  
Oxygen Sublattice ◽  
Large Particles ◽  
Small Lattice ◽  
Coherent Interfaces

The wustite-spinel interface can be viewed as a model interface because the wustite and spinel can share a common f.c.c. oxygen sublattice such that only the cations distribution changes on crossing the interface. In this study, the interface has been formed by a solid state reaction involving either external or internal oxidation. In systems with very small lattice misfit, very large particles (>lμm) with coherent interfaces have been observed. Previously, the wustite-spinel interface had been observed to facet on {111} planes for MgFe2C4 and along {100} planes for MgAl2C4 and MgCr2O4, the spinel then grows preferentially in the <001> direction. Reasons for these experimental observations have been discussed by Henriksen and Kingery by considering the strain energy. The point-defect chemistry of such solid state reactions has been examined by Schmalzried. Although MgO has been the principal matrix material examined, others such as NiO have also been studied.

Observation of solid-state reaction between a thin yttria film and a (0001) α-alumina substrate

1994 ◽  
Vol 52 ◽  
pp. 644-645
Author(s):  
J. R. Heffelfinger ◽  
C. B. Carter
Keyword(s):  
Electron Microscopy ◽  
Solid State ◽  
Solid State Reaction ◽  
Yttrium Aluminum Garnet ◽  
Secondary Phase ◽  
Ceramic Composites ◽  
Alumina Substrate ◽  
Transmission Electron ◽  
Alumina Fibers ◽  
Optical Applications

Transmission-electron microscopy (TEM), scanning-electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) were used to investigate the solid-state reaction between a thin yttria film and a (0001) α-alumina substrate. Systems containing Y2O3 (yttria) and Al2O3 (alumina) are seen in many technologically relevant applications. For example, yttria is being explored as a coating material for alumina fibers for metal-ceramic composites. The coating serves as a diffusion barrier and protects the alumina fiber from reacting with the metal matrix. With sufficient time and temperature, yttria in contact with alumina will react to form one or a combination of phases shown by the phase diagram in Figure l. Of the reaction phases, yttrium aluminum garnet (YAG) is used as a material for lasers and other optical applications. In a different application, YAG is formed as a secondary phase in the sintering of AIN. Yttria is added to AIN as a sintering aid and acts as an oxygen getter by reacting with the alumina in AIN to form YAG.

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