Process-Induced Deformations and Stacking Faults in 4H-SiC
Keyword(s):
X Ray
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AbstractWe used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-SiC wafers and epilayers when subjected to mechanical polishing and high temperature (1150 oC) processing.
2001 ◽
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pp. 325-331
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1982 ◽
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2001 ◽
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2009 ◽
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pp. 1085-1091
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