Investigation on Ultra-high Density and High Speed Non-volatile Phase Change Random Access Memory (PCRAM) by Material Engineering

2006 ◽  
Vol 918 ◽  
Author(s):  
E.G. Yeo ◽  
L.P Shi ◽  
R Zhao ◽  
T.C. Chong
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Activation Barrier ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Scanning Calorimetry ◽  
Material Engineering ◽  
Volatile Phase

AbstractIn this paper, ultra-high memory density and high speed non-volatile phase change random access memory (PCRAM) was investigated by material engineering. The melting point, crystallization point and activation energy of crystallization of the Bismuth (Bi) doped Germanium-Antimony-Tellurium (GeSbTe) compound was measured using differential scanning calorimetry (DSC) and compared to other GeSbTe ternary compounds. It was observed that the melting temperature of Bi-doped GeSbTe was lower than that of GeSbTe. On the other hand, its activation barrier was found to be reduced, which in turn increased the speed of crystallization of Bi-doped GeSbTe. Bi-doped GeSbTe was then used as a phase change material in the fabrication of PCRAM devices. The properties of PCRAM fabricated using this material were then compared to those using GeSbTe, with emphasis on the programming current required. The results obtained revealed that lower programming current of up to 40% has been achieved for PCRAM with Bi-doped GeSbTe compared to those with other GeSbTe compounds. Bi-doped GeSbTe also has low RESET current and fast speed of crystallization with scaling, making it a suitable material for high speed, ultra-high density PCRAM fabrication in the future.

Silicon stacked tunnel transistor for high-speed and high-density random access memory gain cells

1999 ◽  
Vol 35 (10) ◽  
pp. 848 ◽  
Author(s):  
K. Nakazato ◽  
K. Itoh ◽  
H. Mizuta ◽  
H. Ahmed
Keyword(s):  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Tunnel Transistor

scholarly journals Challenges and Applications of Emerging Nonvolatile Memory Devices

Electronics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 1029 ◽  
Author(s):  
Writam Banerjee
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
High Density ◽  
Memory Storage ◽  
Access Memory ◽  
Ultra Low Power

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer torque random access memory, and resistive random-access memory (RRAM) are major emerging technologies. This review explains all varieties of prototype and eNVM devices, their challenges, and their applications. A performance comparison shows that it is difficult to achieve a “universal memory” which can fulfill all requirements. Compared to other emerging alternative devices, RRAM technology is showing promise with its highly scalable, cost-effective, simple two-terminal structure, low-voltage and ultra-low-power operation capabilities, high-speed switching with high-endurance, long retention, and the possibility of three-dimensional integration for high-density applications. More precisely, this review explains the journey and device engineering of RRAM with various architectures. The challenges in different prototype and eNVM devices is disused with the conventional and novel application areas. Compare to other technologies, RRAM is the most promising approach which can be applicable as high-density memory, storage class memory, neuromorphic computing, and also in hardware security. In the post-CMOS era, a more efficient, intelligent, and secure computing system is possible to design with the help of eNVM devices.

Device Characteristics of a Ge-doped SbTe alloy for High-speed Phase-change Random Access Memory

2011 ◽  
Vol 59 (2(1)) ◽  
pp. 466-469 ◽  
Author(s):  
Youngseok Kwon ◽  
Jin-hyock Kim ◽  
Sujin Chae ◽  
Youngho Lee ◽  
Soo Gil Jachun ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Ring Contact Electrode Process for High Density Phase Change Random Access Memory

2007 ◽  
Vol 46 (4B) ◽  
pp. 2001-2005 ◽  
Author(s):  
Kyung-Chang Ryoo ◽  
Yoon Jong Song ◽  
Jae-Min Shin ◽  
Sang-Su Park ◽  
Dong-Won Lim ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Electrode Process ◽  
High Density ◽  
Access Memory ◽  
Contact Electrode

High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1Complete Solid Solution

2007 ◽  
Vol 46 (9A) ◽  
pp. 5719-5723 ◽  
Author(s):  
Dong-Ho Ahn ◽  
Tae-Yon Lee ◽  
Dong-Bok Lee ◽  
Sung-Soo Yim ◽  
Jung-Sub Wi ◽  
...  
Keyword(s):  
Solid Solution ◽  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications

2012 ◽  
Vol 100 (19) ◽  
pp. 193114 ◽  
Author(s):  
Yegang Lu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Feng Rao ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

2015 ◽  
Vol 120 (2) ◽  
pp. 537-542 ◽  
Author(s):  
Le Li ◽  
Sannian Song ◽  
Zhonghua Zhang ◽  
Zhitang Song ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
High Data ◽  
Memory Applications

Preparation of Ge2Sb2Te5 thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering

2006 ◽  
Vol 918 ◽  
Author(s):  
Shin Kikuchi ◽  
Dong Yong Oh ◽  
Isao Kimura ◽  
Yutaka Nishioka ◽  
Koukou Suu
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Rf Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Access Memory ◽  
Target Composition

AbstractPhase Change Random Access Memory [PRAM] is one of the candidate for next generation memory due to its non-volitality, high speed, high density and compatibility with Si-based semiconductor process. Ge2Sb2Te5 [GST] thin film , an active layer in this device, is utilized because it has the well-known property of rapid crystallization without phase separation in erasable compact discs industry.We investigated the difference of the character of the GST thin film with various sputtering methods. 100nm thick GST films were prepared with DC magnetron sputtering and RF magnetron sputtering for this experiment. XRF, XRD,SEM and four point probe measurement are used to analyze the electrical properties of these films.As for the composition of the DC sputtered GST films, Te was insufficient from target composition, while the composition of RF sputtered GST films were almost same as target composition. The RF sputtered GST films were composed of hcp by 400°C annealing. On the other hand, the DC sputtered films were mixed-phase of fcc and hcp. The resistivity of DC Sputtered GST films was higher than RF sputtered film cause of poor crystallinity. The uniformity of RF sputtered film was better than DC sputtered film.

Superlattice-like film for high data retention and high speed phase change random access memory

2016 ◽  
Vol 120 ◽  
pp. 52-55 ◽  
Author(s):  
Le Li ◽  
Sannian Song ◽  
Zhonghua Zhang ◽  
Liangliang Chen ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
High Data
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