Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications

2012 ◽  
Vol 100 (19) ◽  
pp. 193114 ◽  
Author(s):  
Yegang Lu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Feng Rao ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

2015 ◽  
Vol 120 (2) ◽  
pp. 537-542 ◽  
Author(s):  
Le Li ◽  
Sannian Song ◽  
Zhonghua Zhang ◽  
Zhitang Song ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
High Data ◽  
Memory Applications

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Nano Superlattice-like Materials as Thermal Insulators for Phase-Change Random Access Memory

2012 ◽  
Vol 1404 ◽  
Author(s):  
D. Loke ◽  
L. P. Shi ◽  
W. J. Wang ◽  
R. Zhao ◽  
L. T. Ng ◽  
...  
Keyword(s):  
Phase Change ◽  
Material Properties ◽  
Random Access ◽  
Random Access Memory ◽  
Scattering Mechanism ◽  
Access Memory ◽  
Structural Modifications ◽  
Interface Scattering ◽  
Good Material ◽  
Memory Applications

ABSTRACTNanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with the SLL dielectric have a higher peak temperature compared to that of the cells with the SiO2 dielectric after constant pulse activation, due to the interface scattering mechanism. Scaling of the SLL dielectric has resulted in higher peak temperatures, which can be even higher after material/structural modifications. Furthermore, the SLL dielectric has good material properties that enable the cells to have high endurance. This shows the effectiveness of the SLL dielectric for advanced memory applications.

Device Characteristics of a Ge-doped SbTe alloy for High-speed Phase-change Random Access Memory

2011 ◽  
Vol 59 (2(1)) ◽  
pp. 466-469 ◽  
Author(s):  
Youngseok Kwon ◽  
Jin-hyock Kim ◽  
Sujin Chae ◽  
Youngho Lee ◽  
Soo Gil Jachun ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications

2011 ◽  
Vol 58 (12) ◽  
pp. 4423-4426 ◽  
Author(s):  
Liangcai Wu ◽  
Xilin Zhou ◽  
Zhitang Song ◽  
Min Zhu ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Material

High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1Complete Solid Solution

2007 ◽  
Vol 46 (9A) ◽  
pp. 5719-5723 ◽  
Author(s):  
Dong-Ho Ahn ◽  
Tae-Yon Lee ◽  
Dong-Bok Lee ◽  
Sung-Soo Yim ◽  
Jung-Sub Wi ◽  
...  
Keyword(s):  
Solid Solution ◽  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

CrystEngComm ◽  
2020 ◽  
Vol 22 (30) ◽  
pp. 5002-5009
Author(s):  
Zihan Zhao ◽  
Sicong Hua ◽  
Xiao Su ◽  
Bo Shen ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Memory

Titanium-doped SnSb4 phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

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