Modeling and Characterization of the Hydrogenated Amorphous Silicon Metal Insulator Semiconductor Photosensors for Digital Radiography

2007 ◽  
Vol 989 ◽  
Author(s):  
Nader Safavian ◽  
Y. Vygranenko ◽  
J. Chang ◽  
Kyung Ho Kim ◽  
J. Lai ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Spectral Response ◽  
Large Area ◽  
Metal Insulator ◽  
Active Matrix ◽  
High Uniformity ◽  
Measurement Results ◽  
Temperature Deposition ◽  
Hydrogenated Amorphous

AbstractBecause of the inherent desired material and technological attributes such as low temperature deposition and high uniformity over large area, the amorphous silicon (a-Si:H) technology has been extended to digital X-ray diagnostic imaging applications. This paper reports on design, fabrication, and characterization of a MIS-type photosensor that is fully process-compatible with the active matrix a-Si:H TFT backplane. We discuss the device operating principles, along with measurement results of the transient dark current, linearity and spectral response.

Active Pixel TFT Arrays for Digital Fluoroscopy in a-Si:H Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Jackson Lai ◽  
Nader Safavian ◽  
Arokia Nathan ◽  
John A. Rowlands
Keyword(s):  
High Speed ◽  
Dynamic Imaging ◽  
Large Area ◽  
X Ray Imaging ◽  
Active Pixel ◽  
Major Development ◽  
High Uniformity ◽  
Temperature Deposition ◽  
Hydrogenated Amorphous

AbstractMajor development challenges in application of hydrogenated amorphous silicon (a-Si:H) technology to large area digital X-ray imaging and technological attributes such as low temperature deposition and high uniformity over large area evolve around dynamic imaging modalities such as fluoroscopy, which demands both high speed readout and signal amplification capabilities in addition to long term device stability. This work reports on initial results of a variety of TFT active pixel sensor (APS) structures in a-Si:H technology, each demonstrating unique capabilities such as enhancements in signal gain, TFT threshold voltage immunity, and real-time high speed readout.

Spectral response design of hydrogenated amorphous silicon p-i-n diodes for ambient light sensing

2009 ◽  
Vol 94 (17) ◽  
pp. 171103
Author(s):  
S. S. Tan ◽  
C. Y. Liu ◽  
Yeu-Long Jiang ◽  
Der-Yu Lin ◽  
Klaus Y. J. Hsu
Keyword(s):  
Amorphous Silicon ◽  
Spectral Response ◽  
Hydrogenated Amorphous Silicon ◽  
Ambient Light ◽  
Light Sensing ◽  
Hydrogenated Amorphous

Integration and characterization of amorphous silicon thin-film transistor and Mo-tips for active-matrix cathodes

2002 ◽  
Vol 49 (7) ◽  
pp. 1136-1142
Author(s):  
Do-Hyung Kim ◽  
Yoon-Ho Song ◽  
Young-Rae Cho ◽  
Chi-Sun Hwang ◽  
Bong-Chul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Active Matrix

Large Area Flexible Amorphous Silicon Position Sensitive Detectors

2000 ◽  
Vol 609 ◽  
Author(s):  
Elvira M.C. Fortunato ◽  
Donatello Brida ◽  
Isabel M.M. Ferreira ◽  
H. M.B. Åguas ◽  
Patrícia Nunes ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Spectral Response ◽  
Chemical Vapour ◽  
Open Circuit ◽  
Large Area ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Chemical Vapour Deposition Technique ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTLarge area thin film position sensitive detectors based on amorphous silicon technology have been prepared on polyimide substrates using the conventional plasma enhanced chemical vapour deposition technique. The sensors have been characterised by spectral response, illuminated I-V characteristics and position detectability measurements. The obtained one dimensional position sensors with 5 mm wide and 60 mm long present a maximum spectral response at 600 nm, an open circuit voltage of 0.6 V and a position detectability with a correlation of 0.9989 associated to a standard deviation of 1×10−2, comparable to those ones produced on glass substrates. The surface of the sensors at each stage of fabrication was investigated by Atomic Force Microscopy.

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