Crystallization Dynamics and Rapid Thermal Processing of PZT Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Jiayu Chen ◽  
Keith G. Brooks ◽  
K.R. Udayakumar ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Crystallization Process ◽  
Rapid Thermal Processing ◽  
Environmental Scanning Electron Microscopy ◽  
Environmental Scanning ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
Temperature Time

AbstractThe crystallization process of PZT thin films has been studied in situ by means of Environmental Scanning Electron Microscopy ( ESEM ). Based on the ESEM observations, the Rapid Thermal Processing (RTP) technique has been employed to crystallize ferroelectric thin films. Various annealing temperature-time combinations were investigated; the results indicate the crystallization process to be very fast. X-ray diffraction data shows the crystallization to be complete in 10 seconds at 600°C, and in 1 second at 700°C. In comparison with conventionally furnace processed films, the RTP films have comparable ferroelectric and dielectric properties, but are distinguished by superior breakdown strengths and morphologically smoother surface. The relation between microstructure of films and crystallizing parameters has been studied.

Pressure Dependent Rapid Thermal Processing of CuInS2 Thin Films Investigated by In-Situ Energy Dispersive X-ray Diffraction

2007 ◽  
Vol 1012 ◽  
Author(s):  
Immo Michael Kötschau ◽  
Humberto Rodriguez-Alvarez ◽  
Cornelia Streeck ◽  
Alfons Weber ◽  
Manuela Klaus ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Thermal Processing ◽  
Reaction Pathway ◽  
Rapid Thermal Processing ◽  
Energy Dispersive ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray

AbstractThe rapid thermal processing (RTP) of Cu-rich Cu/In precursors for the synthesis of CuInS2 thin films is possible within a broad processing window regarding leading parameters like top temperature, heating rate, and Cu excess. The key reaction pathway for the CuInS2 phase formation has already been investigated by in-situ energy dispersive X-ray diffraction (EDXRD) for various precursor stoichiometries, heating rates and top temperatures at sulphur partial pressure conditions which are typical for physical vapour deposition processes. According to the phase diagrams of the binary sulphide phases, the sulfur partial pressure strongly determines the occuring crystalline phases. However, a controlled variation of the maximum sulphur partial in a typical RTP experiment has not been carried out yet. In order to study the influence of this parameter a special RTP reaction chamber was designed suitable for in-situ EDXRD experiments at the EDDI beamline at BESSY, Berlin. In a typical in-situ RTP/EDXRD experiment sulphur and a Cu/In/Mo/glass precursor are placed in an evacuated graphite reactor. The amount of sulphur determines the maximum pressure available at the top temperature of the experiment. As the RTP process proceeds a complete EDXRD spectrum is acquired every 10 seconds and thus the various stages of the reaction path and the crystalline phases can be monitored. The first experiments show already a significant change in the reaction pathway and the secondary Cu-S phases which segregate on top of the CuInS2 thin film during the reaction.

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment

2005 ◽  
Vol 244 (1-4) ◽  
pp. 281-284 ◽  
Author(s):  
Naohiko Kato ◽  
Ichiro Konomi ◽  
Yoshiki Seno ◽  
Tomoyoshi Motohiro
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Diffraction Study ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
X Ray

Rapid thermal processing chamber for in-situ x-ray diffraction

2015 ◽  
Vol 86 (1) ◽  
pp. 013902 ◽  
Author(s):  
Md. Imteyaz Ahmad ◽  
Douglas G. Van Campen ◽  
Jeremy D. Fields ◽  
Jiafan Yu ◽  
Vanessa L. Pool ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals In situ X-ray diffraction studies on the piezoelectric response of PZT thin films

2016 ◽  
Vol 603 ◽  
pp. 29-33 ◽  
Author(s):  
A. Davydok ◽  
T.W. Cornelius ◽  
C. Mocuta ◽  
E.C. Lima ◽  
E.B. Araujo ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Response ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray

In situ analysis of the crystallization process of Sb 2 S 3 thin films by Raman scattering and X-ray diffraction

2017 ◽  
Vol 121 ◽  
pp. 1-10 ◽  
Author(s):  
Romain Parize ◽  
Thomas Cossuet ◽  
Odette Chaix-Pluchery ◽  
Hervé Roussel ◽  
Estelle Appert ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Crystallization Process ◽  
In Situ Analysis ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Effect of Thermal Stresses Formed during Air Annealing of Amorphous Lanthanum Cuprate Thin Films Deposited on Silicon Substrate

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 613 ◽  
Author(s):  
Nolwenn Tranvouez ◽  
Philippe Steyer ◽  
Annie Malchère ◽  
Pascal Boulet ◽  
Fabien Capon ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Thermal Stresses ◽  
Environmental Scanning Electron Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lift Off

Amorphous thin films of La–Cu–O deposited by magnetron sputtering have been annealed at different temperatures and in situ analyzed by X-ray diffraction. These experiments were useful to determine the crystallization temperature and to follow the crystallization process of the film. The in situ annealing X-ray diffraction analyses have been also used to determine the thermal expansion coefficient of La2CuO4 thin film. The estimated value is close to that obtained for a commercial powder. The thermal expansion coefficient value with additional environmental scanning electron microscopy observations explains the delamination origin that occurs during the annealing before the crystallization step. The buckling and delamination of the film observed is caused by the thermal expansion coefficient mismatch of the film and the substrate. During the heating step, the mismatch generates compressive stress at the film/substrate interface, causing the film to lift off and crack in the typical way.

Microanalysis of Ferroelectric Memories Using Micro X-Ray Diffraction

1996 ◽  
Vol 54 ◽  
pp. 244-245
Author(s):  
M. O. Eatough ◽  
M. A. Rodriguez ◽  
D. Dimos ◽  
B. Tuttle
Keyword(s):  
Thin Films ◽  
New World ◽  
Domain Switching ◽  
Processing Parameters ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Ferroelectric Memories ◽  
Ferroelectric Switching

Since the advent of the microdiffractometer a new world of analysis possibilities have opened. In this paper we will discuss a novel use of microdifraction. We have developed a method for monitoring domain switching in ferroelectric thin films in situ using micro x-ray diffraction (μXRD). μXRD is a nontraditional x-ray diffraction technique which has recently attracted much attention [3]. The microdiffractometer is capable of obtaining a diffraction pattern from 0 – 150° 20 simultaneously from regions as small as 30μm in diameter. The purpose of this study was to determine if ferroelectric switching of ferroelectric Pb(Zr, Ti)O3 (PZT) thin films can be observed using μXRD. This method will be extremely valuable as we target the necessary processing parameters to achieve the desired switching behaviors and to monitor switching in micron-sized devices.

Rapid thermal processing of PZT thin films using a new triol based sol-gel route

1999 ◽  
Vol 228 (1) ◽  
pp. 61-78 ◽  
Author(s):  
S. Arscott ◽  
R. E. Miles ◽  
S. J. Milne
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Pzt Thin Films

A Study of Switching Behavior in Pb(Zr,Ti) O3 Thin Films Using X-Ray Diffraction

1994 ◽  
Vol 361 ◽  
Author(s):  
Michael O. Eatough ◽  
Duane Dimos ◽  
Bruce A. Tuttle ◽  
William L. Warren ◽  
R. Ramesh
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Domain Switching ◽  
Switching Behavior ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Si Substrates ◽  
Intensity Changes

ABSTRACTPb(Zr,Ti)O3 (PZT) thin films are being developed for use in optical and electronic memory devices. To study ferroelectric switching behavior, we have produced relatively untextured PZT thin films on Si substrates. We have developed a method for using x-ray diffraction to observe domain switching in situ. Our study involved the use of a micro-diffractometer to monitor the switching behavior in relatively small (0.7mm diameter) electroded areas. Diffraction analyses were done while DC voltages were applied and removed, representing several places in the hysteresis loop. In particular, we were looking for relative intensity changes in the [h 00],[00l] diffraction peaks as a function of position in the hysteresis loop. Our study indicates that the 90° domain switching exhibited by bulk ferroelectrics, is very limited in films on Si when grain sizes are less than about 1 μm.

TfC13. Rapid thermal processing of PZT thin films

1992 ◽  
Vol 134 (1) ◽  
pp. 285-290 ◽  
Author(s):  
Y. Huang ◽  
I. M. Reaney ◽  
A. J. Bell
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Pzt Thin Films
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