Oxidation Kinetics of Cu-Ni Alloy Observed by in situ UHV-TEM

2007 ◽  
Vol 1026 ◽  
Author(s):  
Li Sun ◽  
John E. Pearson ◽  
Judith C. Yang
Keyword(s):  
High Vacuum ◽  
Alloy Film ◽  
Ultra High Vacuum ◽  
Cross Sectional ◽  
Primary Mechanism ◽  
Transmission Electron ◽  
Ni Alloy ◽  
Cu Oxidation ◽  
Kinetics Of

AbstractThe nucleation and growth of Cu2O and NiO islands due to oxidation of Cu-24%Ni(001) films were monitored at various temperatures by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM). In remarkable contrast to our previous observations of Cu and Cu-Au oxidation, irregular-shaped polycrystalline oxide islands were observed to form with respect to the Cu-Ni alloy film, and an unusual second oxide nucleation stage was noted. Similar to Cu oxidation, the cross-sectional area growth rate of the oxide island is linear indicating oxygen surface diffusion is the primary mechanism of oxide growth.

Initial Oxidation Kinetics of Copper (110) Thin Films As Investigated By IN SITU UHV-TEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 1274-1275
Author(s):  
Guang-Wen Zhou ◽  
Mridula D.Bharadwaj ◽  
Judith C.Yang
Keyword(s):  
Surface Science ◽  
Room Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Science Methods ◽  
Metal Oxidation ◽  
Initial Oxidation ◽  
Transmission Electron ◽  
Kinetics Of

In the study of metal oxidation, there is a wide gap between information provided by surface science methods and that provided by bulk oxidation studies. The former have mostly examined the adsorption of up to ∽1 monolayer (ML) of oxygen on the metal surface, where as both low and high temperature bulk oxidation studies have mainly focused on the growth of an oxide layer at the later stages of oxidation. Hence, we are visualizing the initial oxidation stages of a model metal system by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM), where the surfaces are atomically clean, in order to gain new understanding of these ambiguous stages of oxidation. We have previously studied the growth of Cu2O islands during initial oxidation of Cu(100) film. We are presently investigating the initial stages of Cu(110) oxidation, from 10−4 Torr O2 to atmospheric pressures and temperature range from room temperature to 700 °C.

Heteroepitaxy: The Missing Link Between Surface Chemistry and Dry Corrosion

2000 ◽  
Vol 619 ◽  
Author(s):  
Judith C. Yang ◽  
Mridula Dixit Bharadwaj ◽  
Lori Tropia
Keyword(s):  
Electron Microscopy ◽  
Water Vapor ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Oxygen Gas ◽  
Cu Oxidation

ABSTRACTWe have investigated the initial stages of Cu (001) oxidation in dry and moist oxidizing conditions using in situ ultra-high vacuum (UIHV) transmission electron microscopy (TEM). To investigate the role of moisture in the solid state reactions in Cu oxidation, we have examined the oxidation of Cu (001) with water vapor. Our observation indicate that water vapor causes reduction of Cu2O and retards the oxidation rate if both oxygen gas and water vapor are used simultaneously which contradicts the thermochemical data. We are also modeling the nucleation to coalescence of the oxide scale using the Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation and have noted a qualitative agreement.

Initial Kinetics of Copper Oxidation in Different Oxidizing Atmospheres as Studied by In Situ UHV-TEM

2000 ◽  
Vol 6 (S2) ◽  
pp. 42-43
Author(s):  
Mridula D. Bharadwaj ◽  
Lori Tropia ◽  
Murray Gibson ◽  
Judith C. Yang
Keyword(s):  
Surface Science ◽  
High Vacuum ◽  
Practical Interest ◽  
Ultra High Vacuum ◽  
Copper Oxidation ◽  
Initial Oxidation ◽  
Kinetics Of Oxidation ◽  
Transmission Electron ◽  
Kinetics Of

It is of fundamental and practical interest to understand the oxidation process since a desirable property for metals is resistance to corrosion. But there is a wide gap between information provided by surface science methods and that provided by bulk oxidation studies. The former have mainly examined the adsorption of ∼ 1 ML of oxygen on the metal surface, where as both low and high temperature bulk oxidation studies have mainly focused on the growth of an oxide layer at the later stages of oxidation.We are probing the initial oxidation stage of a model metal system by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM) in order to gain insights into the initial kinetics of oxidation. We have previously shown that the growth mechanism of the cuprous oxide is initially dominated by oxygen surface diffision.

The Heteroepitaxial Nucleation and Growth of Metal Oxides by Llvsztu Oxidation

2000 ◽  
Vol 648 ◽  
Author(s):  
Mridula D. Bharadwaj ◽  
Gnang-wen Zhou ◽  
Judith C. Yang
Keyword(s):  
Electron Microscopy ◽  
Water Vapor ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Cu Film ◽  
Cu Oxidation

AbstractHere we report our investigations on the initial stages of Cu(OO1) oxidation in dry and moist atmosphere using in situ ultra high vacuum (UHV) transmission electron microscopy (TEM), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Cu20 islands were observed to grow 3-dimensionally into the Cu film as seen through the above mentioned techniques. Further, we discuss our interpretation of the experimental observations that presence of water vapor in the oxidizing atmosphere retards the rate of Cu oxidation and Cu20 shows surprising reduction when exposed to water vapor.

A Field Emission System For Transmission Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 298-299
Author(s):  
Michel Troyonal ◽  
Huei Pei Kuoal ◽  
Benjamin M. Siegelal
Keyword(s):  
Electron Microscope ◽  
Field Emission ◽  
Optical System ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Objective Lens ◽  
Electron Optical System ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Emission System

A field emission system for our experimental ultra high vacuum electron microscope has been designed, constructed and tested. The electron optical system is based on the prototype whose performance has already been reported. A cross-sectional schematic illustrating the field emission source, preaccelerator lens and accelerator is given in Fig. 1. This field emission system is designed to be used with an electron microscope operated at 100-150kV in the conventional transmission mode. The electron optical system used to control the imaging of the field emission beam on the specimen consists of a weak condenser lens and the pre-field of a strong objective lens. The pre-accelerator lens is an einzel lens and is operated together with the accelerator in the constant angular magnification mode (CAM).

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

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