Molecular Electronics with Large-area Molecular Junctions

2008 ◽  
Vol 1091 ◽  
Author(s):  
Hylke B. Akkerman ◽  
Auke J. Kronemeijer ◽  
Paul W. M. Blom ◽  
Paul van Hal ◽  
Dago M. de Leeuw ◽  
...  

AbstractA technology is demonstrated to fabricate reliable metal-molecule-metal junctions with unprecedented device diameters up to 100 μm. The yield of these molecular junctions is close to unity. Preliminary stability investigations have shown a shelf life of years and no deterioration upon cycling. Key ingredients are the use of a conducting polymer layer (PEDOT:PSS) sandwiched between a bottom electrode with a self-assembled monolayer (SAM) and the top electrode to prevent electrical shorts, and processing in lithographically defined vertical interconnects (vias) to prevent both parasitic currents and interaction between the environment and the SAM [1].Modeling the current–voltage (I–V) characteristics of alkanedithiols with the Simmons model showed that the low dielectric constant of the molecules in the junction results in a strong image potential that should be included in the tunneling model. Including image force effects, the tunneling model consistently describes the current-voltage characteristics of the molecular junctions up to 1 V bias for different molecule lengths [2].Furthermore, we demonstrate a dependence of the I–V characteristics on the monolayer quality. A too low concentration of long alkanedithiols leads to the formation of looped molecules, resulting in a 50-fold increase of the current through the SAM. To obtain an almost full standing-up phase of 1,14-tetradecanedithiol (C14) a 30 mM concentration is required, whereas a 0.3 mM concentration leads to a highly looped monolayer. The conduction through the full standing-up phase of C14 and C16 is in accordance with the exponential dependence on molecular length as obtained from shorter alkanedithiols [3].Finally, a fully functional solid-state molecular electronic switch is manufactured by conventional processing techniques. The molecular switch is based on a monolayer of photochromic diarylethene molecular switches. The monolayer reversibly switches the conductance by more than one order of magnitude between the two conductance states via optical addressing. This reversible conductance switch operates as an electronic ON/OFF switch (or a reprogrammable data storage unit) that can be optically written and electronically read [4].

Nanoscale ◽  
2021 ◽  
Author(s):  
Elena Gorenskaia ◽  
Kelly Lauren Turner ◽  
Santiago Martín Solans ◽  
Pilar Cea ◽  
Paul Low

Molecular junctions have proven invaluable tools through which to explore the electronic properties of molecules and molecular monolayers. In seeking to develop a viable molecular electronics based technology it becomes...


Nature ◽  
2006 ◽  
Vol 441 (7089) ◽  
pp. 69-72 ◽  
Author(s):  
Hylke B. Akkerman ◽  
Paul W. M. Blom ◽  
Dago M. de Leeuw ◽  
Bert de Boer

2012 ◽  
Vol 13 (11) ◽  
pp. 2502-2507 ◽  
Author(s):  
Kamal Asadi ◽  
Ilias Katsouras ◽  
Jan Harkema ◽  
Fatemeh Gholamrezaie ◽  
Edsger C.P. Smits ◽  
...  

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6953-6958 ◽  
Author(s):  
Y. J. Dappe ◽  
C. González ◽  
J. C. Cuevas

We present anab initiostudy of the use of carbon-based tips as electrodes in single-molecule junctions. We show that carbon tips can be combined with other carbon nanostructures to form all-carbon molecular junctions with molecules like benzene or C60. Results show that the use of carbon tips can lead to conductive molecular junctions and open new perspectives in all-carbon molecular electronics.


2021 ◽  
Vol 2103 (1) ◽  
pp. 012116
Author(s):  
E O Popov ◽  
A G Kolosko ◽  
S V Filippov ◽  
S A Ponyaev

Abstract The work is aimed at obtaining microscopic emission characteristics of individual emission sites of a multi-tip field cathode or large-area emitter (LAFE) based on processing the current-voltage characteristics and emission glow patterns. Processing was carried out on a hardware-software complex for the study of field emission characteristics in real time. The calculation of the microscopic characteristics of the local emission sites — the field enhancement factor and emission area — was carried out by several different algorithms. A comparison of the results showed that the algorithms gave close values of the characteristics, which increases the reliability of the estimates made.


Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 905
Author(s):  
Junhyeok Choi ◽  
Sungjun Kim

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.


Author(s):  
M. Alderighi ◽  
F. Amorini ◽  
A. Anzalone ◽  
G. Cardella ◽  
S. Cavallaro ◽  
...  
Keyword(s):  

2010 ◽  
Vol 97 (17) ◽  
pp. 173302 ◽  
Author(s):  
A. J. Kronemeijer ◽  
E. H. Huisman ◽  
H. B. Akkerman ◽  
A. M. Goossens ◽  
I. Katsouras ◽  
...  

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