scholarly journals Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 905
Author(s):  
Junhyeok Choi ◽  
Sungjun Kim
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Memory Device ◽  
Comparison Study ◽  
Tio2 Layer ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Improved Stability ◽  
Switching Characteristics

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

scholarly journals Fabricating and investigating properties of memristors on flexible substrate (PET)

2016 ◽  
Vol 19 (2) ◽  
pp. 12-18
Author(s):  
Ngoc Kim Pham ◽  
Hieu Van Le ◽  
Vinh Cao Tran ◽  
Toan Thanh Dao
Keyword(s):  
Resistive Switching ◽  
Flexible Substrate ◽  
Visible Region ◽  
Memory Device ◽  
Tio2 Thin Films ◽  
Electrical Field ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Field Bias ◽  
Switching Characteristics

In this study, we have fabricated resistive switching memory device based on TiO2 thin films on ITO/PET commercial substrate. The study on the transmittance spectra showed that with the 100 nm-TiO2/ITO/PET device, the transmission is more than 80 % in the visible region and approximately of 85 % at wavelength of 550 nm. Ag/TiO2/ITO devices exhibit excellent stable bipolar resistive switching characteristics under electrical field bias of -2 V -> 2 V range on the flat state and even after reproductive physical stresses of 500 cycles. Our study on TiO2 based memristors suggests that resistive switching memories are suitable for flexible transparent application in the future.

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
Interface Type ◽  
Switching Memory ◽  
Filament Type

scholarly journals Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications

RSC Advances ◽  
2020 ◽  
Vol 10 (52) ◽  
pp. 31342-31347
Author(s):  
Sobia Ali Khan ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Voltage Amplitude ◽  
Resistive Switching Memory ◽  
Sweep Voltage ◽  
Switching Characteristics ◽  
Switching Memory

Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity.

Eliminating failure behavior by introducing CdS inter-layer in Cu2O-based memory cell

2018 ◽  
Vol 81 (2) ◽  
pp. 20101 ◽  
Author(s):  
Weijie Duan ◽  
Zhenxing Liu ◽  
Yang Zhang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Memory Cell ◽  
Memory Device ◽  
Failure Behavior ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Non Volatile Memory ◽  
Switching Characteristics ◽  
High Set

Resistive switching random access memory (RRAM) has attracted great attention due to its outstanding performance for the next generation non-volatile memory. However, the unexpected failure behaviors seriously hinder the further studies and applications of this new memory device. In this work, the bipolar resistive switching characteristics in Pt/CdS/Cu2O/FTO cells are investigated. The CdS inter-layer is used to suppress the failure behavior in set process. Comparing to the Pt/Cu2O/FTO cell, the switching process in Pt/CdS/Cu2O/FTO cell is not affected even at a high set voltage and the failure behavior is eliminated effectively. Therefore, this work proposes a feasible approach to solve the failure problem in RRAM.

Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure

2010 ◽  
Vol 159 ◽  
pp. 333-337 ◽  
Author(s):  
Amit Prakash ◽  
Siddheswar Maikap ◽  
H.Y. Lee ◽  
G. Chen ◽  
F. Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Device ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Good Memory ◽  
Current Conduction ◽  
Memory Characteristics ◽  
Switching Memory

Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.

Resistive switching of multiferroic BiCoO3 nanoflowers

2015 ◽  
Vol 08 (01) ◽  
pp. 1550001 ◽  
Author(s):  
Bai Sun ◽  
Qiling Li ◽  
Yonghong Liu ◽  
Peng Chen
Keyword(s):  
Resistive Switching ◽  
High Resistance ◽  
Hydrothermal Process ◽  
High Resistance State ◽  
Bipolar Resistive Switching ◽  
Low Resistance ◽  
Current Voltage ◽  
Extreme Change ◽  
Resistance State ◽  
Switching Characteristics

Multiferroic BiCoO 3 nanoflowers were synthesized by a hydrothermal process. The BiCoO 3 nanoflowers show superior bipolar resistive switching characteristics. The typical current–voltage (I–V) characteristics of the Ag / BiCoO 3/ Ag structures exhibit an extreme change in resistance between high resistance state (HRS) or "OFF" state and low resistance state (LRS) or "ON" state with ON/OFF ratio ~ 105.

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

2018 ◽  
Vol 215 (24) ◽  
pp. 1800550 ◽  
Author(s):  
Swati T. Gurme ◽  
Tukaram D. Dongale ◽  
Shripad N. Surwase ◽  
Sujata D. Kumbhar ◽  
Gayatri M. More ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

2012 ◽  
Vol 1430 ◽  
Author(s):  
Atsushi Tsurumaki-Fukuchi ◽  
Hiroyuki Yamada ◽  
Akihito Sawa
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zero Crossing ◽  
Resistive Switching Memory ◽  
Low Resistance ◽  
Current Voltage ◽  
Bipolar Type ◽  
Switching Characteristics ◽  
Switching Memory ◽  
Resistive Switching Effect

ABSTRACTWe have fabricated a ferroelectric resistive switching device of Pt/Bi1-δFeO3 (BFO)/SrRuO3 (SRO) in which the conductivity of BFO layer was controlled by changing the Bi-deficiency concentration. The devices showed a bipolar-type resistive switching effect, i.e., zero-crossing hysteretic current–voltage (I–V) characteristics. In addition, the I–V characteristics in both high and low resistance states are nonlinear, which can avoid a read-error problem in a passive crossbar memory array. Resistive switching characteristics measured in pulse-voltage mode revealed that the resistance values in low resistance states vary with the amplitude and duration time of the pulsed-voltage stresses, indicating possibility of multilevel switching. On the basis of the experimental results, we discuss the potential of the Pt/BFO/SRO device for application in a large-capacity nonvolatile memory.

Sign in / Sign up

Export Citation Format

Share Document