Electroluminescence imaging of Cu(In,Ga)Se2 thin film modules

2009 ◽  
Vol 1165 ◽  
Author(s):  
Uwe Rau ◽  
Thomas Kirchartz ◽  
Anke Helbig ◽  
Bart Elger Pieters
Keyword(s):  
Thin Film ◽  
Network Model ◽  
Evaluation Method ◽  
Voltage Drop ◽  
Experimental Results ◽  
Specific Location ◽  
Current Voltage ◽  
Electroluminescence Intensity ◽  
Current Voltage Characteristics ◽  
The Individual

AbstractElectroluminescence images gained from Cu(In,Ga)Se2 mini-modules under different voltage bias conditions are investigated. The mini-modules of area 20 × 20 cm2 with 42 cells exhibit typically 10-20 localized shunts. The consequences of these shunts on the performance of the individual cells and of the entire module are analyzed quantitatively by evaluating the electroluminescence images. Our evaluation method uses the fact that the electroluminescence intensity at each position in each cell within the module depends on the actual voltage drop over the junction at this specific location. Thus, the analysis of the electroluminescence intensity allows us to reconstruct the current/voltage characteristics of all individual cells in the module. In addition, we provide first simulations using a distributed diode network model to quantitatively explain the experimental results.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

Current–voltage characteristics of PLD grown manganite based ZnO/La0.5Pr0.2Sr0.3MnO3/SrNb0.002Ti0.998O3 thin film heterostructure

2012 ◽  
Vol 152 (1) ◽  
pp. 34-37 ◽  
Author(s):  
Uma Khachar ◽  
P.S. Solanki ◽  
R.J. Choudhary ◽  
D.M. Phase ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Thin Film ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature variation of the current-voltage characteristics of thin-film gas sensors

2006 ◽  
Vol 32 (1) ◽  
pp. 48-50 ◽  
Author(s):  
V. V. Simakov ◽  
O. V. Yakusheva ◽  
A. I. Grebennikov ◽  
V. V. Kisin
Keyword(s):  
Thin Film ◽  
Temperature Variation ◽  
Gas Sensors ◽  
Current Voltage ◽  
Current Voltage Characteristics

Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors

2009 ◽  
Vol 105 (5) ◽  
pp. 054502 ◽  
Author(s):  
Horng-Chih Lin ◽  
Cheng-Hsiung Hung ◽  
Wei-Chen Chen ◽  
Zer-Ming Lin ◽  
Hsing-Hui Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Current Voltage ◽  
Current Voltage Characteristics

Electronic transport through crossed conducting polymer nanowires

2009 ◽  
Vol 24 (10) ◽  
pp. 3018-3022 ◽  
Author(s):  
Yun-Ze Long ◽  
Jean-Luc Duvail ◽  
Qing-Tao Wang ◽  
Meng-Meng Li ◽  
Chang-Zhi Gu
Keyword(s):  
Conjugated Polymer ◽  
Thermal Fluctuation ◽  
Intrinsic Resistance ◽  
Conduction Model ◽  
Linear Current ◽  
Tunneling Conduction ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
The Individual ◽  
Polymer Nanowires

In order to study the electronic properties of conjugated polymer nanowire junctions, we have fabricated two devices consisting of two crossed poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires with platinum microleads attached to each end of each nanowire. We find that the junction resistance of the crossed nanowires is much larger than the intrinsic resistance of the individual PEDOT nanowire, and increases with decreasing temperature, which can be described by a thermal fluctuation-induced tunneling conduction model. In addition, the crossed junctions show linear current-voltage characteristics at room temperature.

Step-Like Current-Voltage Characteristics in Metal/a-Si:H/Metal Structures

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Hajto ◽  
A.J. Snell ◽  
M.J. Rose ◽  
A.E. Owen ◽  
I.S. Osborne ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Bias Current ◽  
Experimental Results ◽  
Metal Structures ◽  
Half Integer ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Memory Structures

We present experimental results showing that Cr/p+/V amorphous silicon memory structures at room temperature exhibit step-like current-voltage characteristics associated with discrete, non-random resistance values. The resistance values observed are ∼26kΩ/i where i is an integer or half integer. The low bias current-voltage characteristics prior to the first step suggest that conduction in this regime is governed by tunneling across a region having very small dimensions, of the order of ∼5-7 Å, and having a diameter ∼30-50 Å.

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