Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) Upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction

2009 ◽  
Vol 1172 ◽  
Author(s):  
Anja Hanisch-Blicharski ◽  
Boris Krenzer ◽  
Simone Möllenbeck ◽  
Manuel Ligges ◽  
Ping Zhou ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Temperature Rise ◽  
Laser Fluence ◽  
Initial Temperature ◽  
Laser Excitation ◽  
Laser Pulses ◽  
High Energy ◽  
Time Resolved ◽  
Thermal Boundary Conductance ◽  
Short Laser Pulses

AbstractWith time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.

Time-Resolved X-Ray Studies During Pulsed-Laser Irradiation of Ge

1984 ◽  
Vol 35 ◽  
Author(s):  
J.Z. Tischler ◽  
B.C. Larson ◽  
D.M. Mills
Keyword(s):  
Melting Point ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
Measured Temperature ◽  
Time Resolved ◽  
Synchrotron Source ◽  
X Ray ◽  
Pulsed Laser Irradiation

ABSTRACTSynchrotron x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) have been used to carry out nanosecond resolution measurements of the temperature distrubutions in Ge during UV pulsed-laser irradiation. KrF (249 nm) laser pulses of 25 ns FWHM with an energy density of 0.6 J/cm2 were used. The temperatures were determined from x-ray Bragg profile measurements of thermal expansion induced strain on <111> oriented Ge. The data indicate the presence of a liquid-solid interface near the melting point, and large (1500-4500°C/pm) temperature gradients in the solid; these Ge results are analagous to previous ones for Si. The measured temperature distributions are compared with those obtained from heat flow calculations, and the overheating and undercooling of the interface relative to the equilibrium melting point are discussed.

Ultra-fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon Surfaces

2009 ◽  
Vol 1230 ◽  
Author(s):  
Simone Möllenbeck ◽  
Anja Hanisch-Blicharski ◽  
Paul Schneider ◽  
Manuel Ligges ◽  
Ping Zhou ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Transitions ◽  
Electron Diffraction ◽  
Structural Phase ◽  
High Energy ◽  
Silicon Surfaces ◽  
Fast Time ◽  
Time Resolved ◽  
Disorder Phase Transition ◽  
Pulse Pump

AbstractThe dynamics of strongly driven phase transitions at surfaces are studied by ultra-fast time-resolved reflection high energy electron diffraction. The surfaces are excited by an intense fs-laser pulse (pump) and probed by an ultra-short electron pulse with variable time delay. The order-disorder phase transition from a c(4×2) to a (2×1) of the bare Si(001) surface shows a transient decrease of the intensity of the c(4×2) spots which recovers on a time scale of a few hundred picoseconds indicating the excitation of the phase transition. On Si(111) a monolayer of Indium induces a (4×1) reconstruction which undergoes a Peierls like phase transition to a (8ד2”) reconstruction below 100 K. Upon laser excitation at a temperature of 40 K the phase transition was strongly driven. The (8ד2”)-diffraction spots instantaneously disappears, while the intensity of the (4×1)-spots increases. This increase of the (4×1) spot intensity excludes an explanation by the Debye-Waller-Effect and is evidence for a true structural phase transition at a surface.

Implications for Ultrafast Reflection Electron Diffraction from Temporal and Spatial Evolution of Transient Electric Fields

2009 ◽  
Vol 1230 ◽  
Author(s):  
Hyuk Park ◽  
J.M. Zuo
Keyword(s):  
Electron Diffraction ◽  
Electric Fields ◽  
Materials Science ◽  
Thermionic Emission ◽  
Sample Surface ◽  
High Energy ◽  
Intense Laser ◽  
Hot Electron ◽  
Time Resolved ◽  
Reflection Electron Diffraction

AbstractUnderstanding interaction of ultrafast pulsed laser with matter is critical for probing ultrafast processes in materials science, understanding the physics of laser ablation and the laser induced non-equilibrium carrier dynamics in metals and semiconductors, including plasmonics. When an intense laser pulse of femtoseconds (fs) in duration hits the surface of a targeted matter, it excites a hot electron gas. Part of the hot electrons is emitted from the surface in a way similar to thermionic emission. Electrons can also be emitted through multiphoton photoemission (MPPE) or thermally assisted MPPE. The emitted electrons travel at speeds that create transient electric fields (TEFs). To detect TEFs and study the dynamics of emitted electrons, we have developed a time resolved electron beam imaging technique that allows us to measure TEFs above a sample surface at picoseconds time resolution. We have also developed a model of the TEFs based on the propagation of emitted electrons and the percentage of electrons escaping from the surface. We examine the significance of TEFs for ultrafast reflection electron diffraction by examining anomalous effects in ultrafast reflection high energy electron diffraction (RHEED) of silicon surfaces.

scholarly journals Experimental and numerical study of ultra-short laser-produced collimated Cu Kα X-ray source

2017 ◽  
Vol 35 (3) ◽  
pp. 442-449 ◽  
Author(s):  
R. Rathore ◽  
V. Arora ◽  
H. Singhal ◽  
T. Mandal ◽  
J.A. Chakera ◽  
...  
Keyword(s):  
Laser Intensity ◽  
Numerical Study ◽  
Low Cost ◽  
Laser Pulses ◽  
Photon Flux ◽  
X Rays ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Short Laser Pulses

AbstractKα X-ray sources generated from the interaction of ultra-short laser pulses with solids are compact and low-cost source of ultra-short quasi-monochromatic X-rays compared with synchrotron radiation source. Development of collimated ultra-short Kα X-ray source by the interaction of 45 fs Ti:sapphire laser pulse with Cu wire target is presented in this paper. A study of the Kα source with laser parameters such as energy and pulse duration was carried out. The observed Kα X-ray photon flux was ~2.7 × 108 photons/shot at the laser intensity of ~2.8 × 1017 W cm−2. A model was developed to analyze the observed results. The Kα radiation was coupled to a polycapillary collimator to generate a collimated low divergence (0.8 mrad) X-ray beam. Such sources are useful for time-resolved X-ray diffraction and imaging studies.

scholarly journals Time-Resolved Resonance Raman Spectroscopy of Excited-State Porphyrins

1999 ◽  
Vol 19 (1-4) ◽  
pp. 271-274 ◽  
Author(s):  
S. E. J. Bell ◽  
J. H. Rice ◽  
J. J. McGarvey ◽  
R. E. Hester ◽  
J. N. Moore ◽  
...  
Keyword(s):  
Excited State ◽  
Excited States ◽  
Laser Excitation ◽  
Resonance Raman Spectroscopy ◽  
Resonance Raman ◽  
Laser Pulses ◽  
Significant Shift ◽  
Time Resolved ◽  
Two Component ◽  
Absorbance Difference

Time-resolved resonance Raman (TR3) and absorbance difference studies of the excited states of Cu(TPP) (TPP=5,10,15,20-tetraphenylporphyrin) have been carried out with < 10 ps times resolution in THF and pyridine solvents. In THF the distinctive transient Raman bands in the ν2 and ν4 regions, previously observed with ns laser pulses, grow in the first 55 ps before decaying in 100's of ps. The ∆A spectra also show biphasic decay. This behaviour is associated with attack by solvent on the 4-coordinate excited state to form the longer lived species observed in TR3 experiments.In pyridine two component decay is also observed but it is the shorter-lived species which gives the transient Raman bands seen previously with ns laser excitation. This state is different from that seen in THF. At 5 ps delay ν4 is broader than in the ground state and, more importantly, there is a significant shift in the two pyridine bands at ca. 1000 cm-1. This implies a significant involvement of the pyridine-based orbitals in the excited state.

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