Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yuki Watabe ◽  
Taku Tajima ◽  
Tohru Nakamura
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistor ◽  
Emitter Current ◽  
Bandgap Narrowing ◽  
Junction Transistor ◽  
The Common ◽  
Good Agreement ◽  
Ion Implanted

AbstractDegradation of current gain for ion implanted 4H-SiC bipolar junction transistor is described. The influence of bandgap-narrowing to the collector and base currents of the transistor was investigated using ISE-TCAD simulator. Simulated results show good agreement with the measured results, which show that the common emitter current gain of 3.9 is obtained at a maximum base concentration of 2×1017/cm3 and a maximum emitter concentration of 4×1019/cm3 for ion implanted 4H-SiC BJTs.

Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT

2010 ◽  
Vol 645-648 ◽  
pp. 1065-1067
Author(s):  
Taku Tajima ◽  
Tohru Nakamura ◽  
Y. Watabe ◽  
Masataka Satoh ◽  
Tadashi Nakamura
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistor ◽  
Emitter Current ◽  
Junction Transistor ◽  
Extrinsic Base ◽  
Triple Ion ◽  
Ion Implanted

In this paper, we demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT) with etched extrinsic base regions. At the result of etching extrinsic base regions by mask of contact metals, maximum common emitter current gain was improved from 0.7 to 1.6.

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

2009 ◽  
Vol 615-617 ◽  
pp. 821-824 ◽  
Author(s):  
Kenichi Nonaka ◽  
Akihiko Horiuchi ◽  
Yuki Negoro ◽  
Kensuke Iwanaga ◽  
Seiichi Yokoyama ◽  
...  
Keyword(s):  
Contact Region ◽  
Surface Recombination ◽  
Current Gain ◽  
Type Region ◽  
Bipolar Junction Transistor ◽  
Type Layer ◽  
Blocking Voltage ◽  
Junction Transistor ◽  
The Common ◽  
P Type

A new 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination structure: SSR-BJT has been proposed to improve the common emitter current gain which is one of the main issues for 4H-SiC BJTs. A Lightly Doped N-type layer (LDN-layer) between the emitter and base layers, and a High Resistive P-type region (HRP-region) formed between the emitter mesa edge and the base contact region were employed in the SSR-BJT. A fabricated SSR-BJT showed a maximum current gain of 134 at room temperature with a specific on-resistance of 3.2 mΩcm2 and a blocking voltage VCEO of 950 V. The SSR-BJT kept a current gain of 60 at 250°C with a specific on-resistance of 8 mΩcm2. To our knowledge, these current gains are the highest among 4H-SiC BJTs with a blocking voltage VCEO more than about 1000 V which have been ever reported.

Control of Bipolar Junction Transistor Current Grain Using Rapid Thermal Processing.

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Kermani ◽  
F. Van Gieson ◽  
S. Litwin ◽  
R. Sullivan ◽  
T. J. DeBolske ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Electrical Characteristics ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
The Common ◽  
Profile Technique ◽  
Better Than

ABSTRACTThe activation of ion implanted emitters for two types of NPN bipolar junction transistors ( BJT ) by rapid thermal processing (RTP) was evaluated. The dopant profiles and the resultant junction depths were measured for various thermal cycles, using spreading resistance profile technique. The electrical characteristics of the transistors were then determined and compared to the standard furnace processes. The common emitter current gain values, hFE, for arsenic emitters were low and phosphorous emitters exhibited improved or comparable betas. The breakdown voltages in common emitter configuration, BV,CEO, BVcEs and BVEBO were comparable or better than the furnace annealed samples and no evidence of transistor leakage was observed.

Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability

2019 ◽  
Vol 34 (4) ◽  
pp. 045001
Author(s):  
Yourun Zhang ◽  
Hang Chen ◽  
Maojiu Luo ◽  
Juntao Li ◽  
Wen Wang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Current Gain ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Field Plate ◽  
Plate Design ◽  
Junction Transistor

TOWARDS THRESHOLD FREQUENCY IN CHAOTIC COLPITTS OSCILLATOR

2007 ◽  
Vol 17 (10) ◽  
pp. 3449-3453 ◽  
Author(s):  
ERIK LINDBERG ◽  
ARŪNAS TAMAŠEVIČIUS ◽  
GYTIS MYKOLAITIS ◽  
SKAIDRA BUMELIENĖ
Keyword(s):  
Fundamental Frequency ◽  
Chaotic Oscillations ◽  
Colpitts Oscillator ◽  
Bipolar Junction Transistor ◽  
Threshold Frequency ◽  
Junction Transistor ◽  
The Common ◽  
Linear Loss ◽  
Collector Circuit

A novel version of chaotic Colpitts oscillator is described. Instead of a linear loss resistor, it includes an extra inductor and a diode in the collector circuit of the transistor. The modified circuit in comparison with the common Colpitts oscillator may generate chaotic oscillations at the fundamental frequency f* noticeably closer to the threshold frequency fT of the employed bipolar junction transistor, up to f* ≈ 0.6fT.

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

2005 ◽  
Vol 483-485 ◽  
pp. 901-904 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
Craig Capell ◽  
Jim Richmond ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Voltage Drop ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
A Current

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor

2006 ◽  
Vol 527-529 ◽  
pp. 1417-1420 ◽  
Author(s):  
Jian Hui Zhang ◽  
Jian Wu ◽  
Petre Alexandrov ◽  
Terry Burke ◽  
Kuang Sheng ◽  
...  
Keyword(s):  
High Power ◽  
Active Area ◽  
Current Gain ◽  
High Current ◽  
Theoretical Limit ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Blocking Voltage ◽  
Saturation Region ◽  
Junction Transistor

This paper reports recent progress in the development of high power 4H-SiC BJTs based on an improved device design and fabrication scheme. Near theoretical limit high blocking voltage of VCEO=1,836 V has been achieved for 4H-SiC BJTs based on a drift layer of only 12 μm, doped to 6.7x1015 cm-3. The collector current measured for a single cell BJT with an active area of 0.61 mm2 is up to IC=9.87 A (JC=1618 A/cm2). The collector current is 7.64 A (JC=1252 A/cm2) at VCE=5.9 V in the saturation region, corresponding to an absolute specific on-resistance (RSP_ON) of 4.7 m9·cm2. From VCE=2.4 V to VCE= 5.8 V, the BJT has a differential RSP_ON of only 3.9 m9·cm2. The current gain is about 8.8 at Ic=5.3 A (869 A/cm2). This 4H-SiC BJT shows a V2/RSP_ON of 717 MW/cm2, which is the highest value reported to date for high-voltage and high-current 4H-SiC BJTs. A verylarge area 4H-SiC BJT with an active area of 11.3 mm2 is also demonstrated.

Common-emitter current–voltage characteristics of a pnp GaN bipolar junction transistor

2002 ◽  
Vol 80 (7) ◽  
pp. 1225-1227 ◽  
Author(s):  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Bipolar Junction Transistor ◽  
Emitter Current ◽  
Current Voltage ◽  
Junction Transistor ◽  
Current Voltage Characteristics

High current gain 4H-SiC bipolar junction transistor

2016 ◽  
Vol 37 (4) ◽  
pp. 044005
Author(s):  
Yourun Zhang ◽  
Jinfei Shi ◽  
Ying Liu ◽  
Chengchun Sun ◽  
Fei Guo ◽  
...  
Keyword(s):  
Current Gain ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Junction Transistor
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