Growth of High Quality c-plane AlN on a-plane Sapphire

2009 ◽  
Vol 1202 ◽  
Author(s):  
Reina Miyagawa ◽  
Jiejun Wu ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic ◽  
Dislocations Density ◽  
Reactor Pressure

Abstractc-plane (0001) AlN layers were grown on sapphire (11-20) and (0001) substrates by hydride vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE), respectively. The growth temperatures were adjusted from 1430-1500 °C and the reactor pressure was kept constant at 30 Torr. Mirror and flat c-plane AlN were obtained grown on both a-plane and c-plane sapphire. Crystalline quality and surface roughness are improved with increasing growth temperature, detected by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM). The Full widths at half maximum (FWHM) values of (10-12) diffraction are 519 and 1219 arcsec for c-plane AlN grown on a-plane sapphire and c-plane sapphire, respectively. It indicates that a-plane sapphire substrate benefits to decrease dislocations density.

scholarly journals Эпитаксия слоев GaN(0001) или GaN(1011) на подложке Si(100)

2019 ◽  
Vol 45 (11) ◽  
pp. 3
Author(s):  
В.Н. Бессолов ◽  
М.Е. Компан ◽  
Е.В. Коненкова ◽  
В.Н. Пантелеев ◽  
С.Н. Родин ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Organic Vapor ◽  
Metal Organic ◽  
Aln Buffer ◽  
Semipolar Gan ◽  
Nanostructured Si

AbstractTwo different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 $$\bar {1}$$ 1) on a V -shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10 $$\bar {1}$$ 1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ω_θ ~ 45 arcmin, whereas for the semipolar GaN(10 $$\bar {1}$$ 1), these values are –0.29 GPa and ω_θ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

Formation of Self-Assembled Nanometer-Scale InP Islands on Silicon Substrates

2000 ◽  
Vol 618 ◽  
Author(s):  
A.S. Bakin ◽  
D. Piester ◽  
H.-H. Wehmann ◽  
A.A. Ivanov ◽  
A. Schlachetzki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Vapor Phase ◽  
Three Dimensional ◽  
Nanometer Scale ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic

ABSTRACTThree-dimensional islands of InP have been reproducibly grown in the Stranski-Krastanow growth mode on Si (001) and (111) by using metal-organic vapor phase epitaxy in order to obtain nanometer-scale quantum dots. Atomic-force microscopy was used to determine the morphology of the samples and to evaluate the dimensions of the islands. Formation of three-dimensional islands with densities as high as 2.5×1010 cm−2 and small sizes have been observed. The evolution of island morphology is explained in terms of strain-relaxing mechanisms at the first stages of InP/Si heteroepitaxy.

Improvement of Photoelectrochemical Reaction for Hydrogen Generation from Water using N-face GaN

2009 ◽  
Vol 1202 ◽  
Author(s):  
Katsushi Fujii ◽  
Keiichi Sato ◽  
Takashi Kato ◽  
Tsutomu Minegishi ◽  
Takafumi Yao
Keyword(s):  
Vapor Phase ◽  
Hydrogen Generation ◽  
Photocurrent Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Photoelectrochemical Properties ◽  
Zero Bias ◽  
Organic Vapor ◽  
Metal Organic

AbstractPhotoelectrochemical properties of Ga- and N-face GaN grown by hydride vapor phase epitaxy (HVPE) were investigated. The properties were also compared with Ga-face GaN grown by metal-organic vapor phase epitaxy (MOVPE). The flatband potentials were in order of Ga-face GaN grown by MOVPE < N-face GaN < Ga-face GaN. The highest photocurrent density at zero bias was obtained from the N-face GaN. The photocurrent density was over 3 times larger than that of Ga-face GaN.

Optimization of GaN Barriers During the Growth of InGaN/GaN Quantum Wells at Low Temperature

2008 ◽  
Vol 1108 ◽  
Author(s):  
Kalyan R Kasarla ◽  
Wenyu Chiang ◽  
Ronak Rahimi ◽  
D. Korakakis
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Defect Density ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic ◽  
Tapping Mode Afm ◽  
Surface Morphologies

AbstractInGaN/GaN MQWs are grown on c-plane sapphire substrates using a low pressure metal organic vapor phase epitaxy (MOVPE) system. Trimethylgallium (TMGa), Triethylgallium (TEGa), Trimethylindium (TMIn) and ammonia were used as precursors for Ga, In and N, respectively and the growths were carried out at low temperature. Structural properties of grown MQWs are characterized using atomic force microscopy (AFM), and scanning electron microscope (SEM) and x-ray diffraction technique (XRD) is used to calculate the Indium incorporation in these MQWs. Surface morphologies over large areas of InGaN/GaN MQWs are observed using the tapping mode AFM; results indicate the surface roughness depends on the barrier thickness. Density of V- defects, effect of barrier width on the surface morphology and also on V-defect density will be presented and discussed.

scholarly journals Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 704 ◽  
Author(s):  
Chi-Tsung Tasi ◽  
Wei-Kai Wang ◽  
Sin-Liang Ou ◽  
Shih-Yung Huang ◽  
Ray-Hua Horng ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Al Content ◽  
Atomic Force ◽  
Transmission Electron ◽  
Biaxial Tensile Stress

In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface morphology, microstructure, and stress state of the AlGaN/AlN/NPSS epilayers were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The results indicate that the crystal quality of the AlGaN film could be improved when grown on the AlN/NPSS template. The screw threading dislocation (TD) density was reduced to 1.4 × 109 cm−2 for the AlGaN epilayer grown on the AlN/NPSS template, which was lower than that of the sample grown on a flat c-plane sapphire substrate (6.3 × 109 cm−2). As examined by XRD measurements, the biaxial tensile stress of the AlGaN film was significantly reduced from 1,187 MPa (on AlN/NPSS) to 38.41 MPa (on flat c-plane sapphire). In particular, an increase of the Al content in the overgrown AlGaN layer was confirmed by the TEM observation. This could be due to the relaxation of the in-plane stress through the AlGaN and AlN/NPSS template interface.

Growth of a -Plane GaN Films on r -Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy

2015 ◽  
Vol 32 (8) ◽  
pp. 088103 ◽  
Author(s):  
Teng Jiang ◽  
Sheng-Rui Xu ◽  
Jin-Cheng Zhang ◽  
Zhi-Yu Lin ◽  
Ren-Yuan Jiang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

The Chemistry of GaN Growth

2000 ◽  
Vol 639 ◽  
Author(s):  
T.F. Kuech ◽  
Shulin Gu ◽  
Ramchandra Wate ◽  
Ling Zhang ◽  
Jingxi Sun ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Density Functional ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Computational Techniques ◽  
Organic Vapor ◽  
Metal Organic ◽  
Experimental Approaches ◽  
Underlying Mechanisms ◽  
Kinetics Of

ABSTRACTThe development of new chemically based growth techniques has opened the range of possible GaN applications. This paper reviews some of the challenges in the chemically based growth of GaN and related materials. Ammonothermal-based growth, hydride vapor phase epitaxy and metal organic vapor phase epitaxy (MOVPE) are chemically complex systems wherein the underlying mechanisms of growth are not well understood at present. All these systems require substantial experimental and theoretical efforts to determine the nature and kinetics of GaN growth. In the case of metal organic vapor phase epitaxy, the application of computational techniques based on density functional theory have augmented the more conventional experimental approaches to determining the growth chemistry. These chemical reaction schemes, when combined with computational thermal-fluid models of the reactor environment, provide the opportunity to predict growth rates, uniformity and eve ntually materials properties.

Annealing effect of scratch characteristics of ZnMgO epilayers on R-plane sapphire

2021 ◽  
Vol 112 (2) ◽  
pp. 158-163
Author(s):  
Hua-Chiang Wen ◽  
Ming-Chu Hsieh ◽  
Yu-Pin Lan ◽  
Wu-Ching Chou
Keyword(s):  
Atomic Force Microscopy ◽  
Vapor Phase ◽  
Annealing Treatment ◽  
Annealing Effect ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic ◽  
Substrate Temperatures ◽  
Microscopy Examination

Abstract The nanotribological properties of Zn0.75Mg0.25O grown on R-plane sapphire using metal-organic vapor-phase epitaxy at different substrate temperatures (RT, 600, 700 and 800 °C) were investigated. A slight sliding track was observed at ramped loads of 250 μN, and an obvious bulge edge surrounding the groove was observed at ramped loads of 1 000 μN. Because of the annealing treatment, all the Zn0.75Mg0.25O coatings showed a reconstruction phenomenon of crystallites. The volumes of the bulge edges were as high as 30% in the annealed specimens and were larger than the volumes of the RT-treated specimens when ramped loads of 1 000 μN were applied. Under frictional loading, atomic force microscopy examination of scratch-tested films indicated lower bonding forces on R-plane sapphire than M-plane sapphire.

Sign in / Sign up

Export Citation Format

Share Document