Formation of Self-Assembled Nanometer-Scale InP Islands on Silicon Substrates

2000 ◽  
Vol 618 ◽  
Author(s):  
A.S. Bakin ◽  
D. Piester ◽  
H.-H. Wehmann ◽  
A.A. Ivanov ◽  
A. Schlachetzki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Vapor Phase ◽  
Three Dimensional ◽  
Nanometer Scale ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic

ABSTRACTThree-dimensional islands of InP have been reproducibly grown in the Stranski-Krastanow growth mode on Si (001) and (111) by using metal-organic vapor phase epitaxy in order to obtain nanometer-scale quantum dots. Atomic-force microscopy was used to determine the morphology of the samples and to evaluate the dimensions of the islands. Formation of three-dimensional islands with densities as high as 2.5×1010 cm−2 and small sizes have been observed. The evolution of island morphology is explained in terms of strain-relaxing mechanisms at the first stages of InP/Si heteroepitaxy.

Annealing effect of scratch characteristics of ZnMgO epilayers on R-plane sapphire

2021 ◽  
Vol 112 (2) ◽  
pp. 158-163
Author(s):  
Hua-Chiang Wen ◽  
Ming-Chu Hsieh ◽  
Yu-Pin Lan ◽  
Wu-Ching Chou
Keyword(s):  
Atomic Force Microscopy ◽  
Vapor Phase ◽  
Annealing Treatment ◽  
Annealing Effect ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic ◽  
Substrate Temperatures ◽  
Microscopy Examination

Abstract The nanotribological properties of Zn0.75Mg0.25O grown on R-plane sapphire using metal-organic vapor-phase epitaxy at different substrate temperatures (RT, 600, 700 and 800 °C) were investigated. A slight sliding track was observed at ramped loads of 250 μN, and an obvious bulge edge surrounding the groove was observed at ramped loads of 1 000 μN. Because of the annealing treatment, all the Zn0.75Mg0.25O coatings showed a reconstruction phenomenon of crystallites. The volumes of the bulge edges were as high as 30% in the annealed specimens and were larger than the volumes of the RT-treated specimens when ramped loads of 1 000 μN were applied. Under frictional loading, atomic force microscopy examination of scratch-tested films indicated lower bonding forces on R-plane sapphire than M-plane sapphire.

The Initial Stages of Growth of Ordered GaInP and GaInAs Grown by Metal Organic Vapor Phase Epitaxy

1999 ◽  
Vol 583 ◽  
Author(s):  
M. C. Hanna ◽  
A. Mascarenhas ◽  
Hyeonsik M. Cheong
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
Direct Evidence ◽  
Force Microscopy ◽  
Step Flow ◽  
Organic Vapor ◽  
Stages Of Growth ◽  
Atomic Force ◽  
Metal Organic ◽  
Step Flow Growth

AbstractWe have used atomic force microscopy (AFM) and Raman spectroscopy to investigate the development of the surface morphology of (001) direct and vicinal GaInP and GaInAs grown under conditions to produce strong CUPtB ordering. Raman spectroscopy provided direct evidence of CuPtB ordering in layers as thin as 10 nm for GaInP and 5 nm for GaInAs. We find that the morphology of GaInP and GaInAs on (001)6B substrates consists of ridges, which are aligned predominately along the [110] direction (A-direction). These ridges are well developed even at layer thicknesses of 2 nm, and their sides consist of step-bunches and near (001) terraces. On (001) direct substrates, the GaInP morphology is similar to that obtained on 6B substrates, although the step bunches have no preferential orientation, while GaInAs (001) growth proceeds by a combination of 2D-island and step flow growth. We discuss possible reasons for the differences in the morphology of ordered GaInP and GaInAs. The results of this work suggest it may be difficult to produce abrupt heterointerfaces in structures containing ordered GalnP and GaInAs alloys.

Growth of High Quality c-plane AlN on a-plane Sapphire

2009 ◽  
Vol 1202 ◽  
Author(s):  
Reina Miyagawa ◽  
Jiejun Wu ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic ◽  
Dislocations Density ◽  
Reactor Pressure

Abstractc-plane (0001) AlN layers were grown on sapphire (11-20) and (0001) substrates by hydride vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE), respectively. The growth temperatures were adjusted from 1430-1500 °C and the reactor pressure was kept constant at 30 Torr. Mirror and flat c-plane AlN were obtained grown on both a-plane and c-plane sapphire. Crystalline quality and surface roughness are improved with increasing growth temperature, detected by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM). The Full widths at half maximum (FWHM) values of (10-12) diffraction are 519 and 1219 arcsec for c-plane AlN grown on a-plane sapphire and c-plane sapphire, respectively. It indicates that a-plane sapphire substrate benefits to decrease dislocations density.

scholarly journals Crystal growth of the core and rotated epitaxial shell of a heterometallic metal-organic framework revealed with atomic force microscopy

2021 ◽  
Author(s):  
Fajar Inggit Pambudi ◽  
Michael William Anderson ◽  
Martin Attfield
Keyword(s):  
Atomic Force Microscopy ◽  
Crystal Growth ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Force Microscopy ◽  
The Core ◽  
Atomic Force ◽  
Metal Organic ◽  
Surface Crystal ◽  
Organic Framework

Atomic force microscopy has been used to determine the surface crystal growth of two isostructural metal-organic frameworks, [Zn2(ndc)2(dabco)] (ndc = 1,4-naphthalene dicarboxylate, dabco = 4-diazabicyclo[2.2.2]octane) (1) and [Cu2(ndc)2(dabco)] (2) from...

scholarly journals Acoustic subsurface-atomic force microscopy: Three-dimensional imaging at the nanoscale

2021 ◽  
Vol 129 (3) ◽  
pp. 030901
Author(s):  
Hossein J. Sharahi ◽  
Mohsen Janmaleki ◽  
Laurene Tetard ◽  
Seonghwan Kim ◽  
Hamed Sadeghian ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Three Dimensional ◽  
Three Dimensional Imaging ◽  
Force Microscopy ◽  
Atomic Force

Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Hirayama ◽  
S. Tanaka ◽  
P. Ramvall ◽  
Y. Aoyagi
Keyword(s):  
Quantum Dots ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Organic Chemical ◽  
Self Assembling ◽  
Atomic Force ◽  
Peak Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

Sonication of 2D metal-organic framework for atomic force microscopy

2020 ◽  
Author(s):  
Pavel Alekseevskiy ◽  
Andrei N. Yankin ◽  
Marina O. Barsukova ◽  
Valentin A. Milichko
Keyword(s):  
Atomic Force Microscopy ◽  
Metal Organic Framework ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Framework

Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy

2014 ◽  
Vol 64 (6) ◽  
pp. 923-928 ◽  
Author(s):  
D. Takeuchi ◽  
K. Makihara ◽  
A. Ohta ◽  
M. Ikeda ◽  
S. Miyazaki
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Electron Emission ◽  
High Density ◽  
Force Microscopy ◽  
Atomic Force
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