P-layer Optimization in High Performance a-Si:H Solar Cells

2010 ◽  
Vol 1245 ◽  
Author(s):  
Yueqin Xu ◽  
Bill Nemeth ◽  
Falah Hasoon ◽  
Lusheng Hong ◽  
Anna Duda ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Fill Factor ◽  
Transparent Conducting Oxide ◽  
Critical Role ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Oxide Glass ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

AbstractWe report our progress toward high-performance hydrogenated amorphous silicon (a-Si:H) solar cells fabricated in NREL's newly installed multi-chamber film Si deposition system. The a-Si:H layers are made by standard radio frequency plasma-enhanced chemical vapor deposition. This system produces a-Si:H p-i-n single-junction devices on Asahi U-type transparent conducting oxide glass with >10% initial efficiency. The importance of the p-layer to the cell is identified: it plays a critical role in further improving cell performance. Our optimization process involves changing p-layer parameters such as dopant levels, bandgap, and thickness in cells as well as applying a double p-layer. With the optimized p-layer, we are able to increase the fill factor of our cells to as high as 72% while maintaining high open-circuit voltage.

Temperature Dependent Transport in Microcrystalline PIN Diodes

2000 ◽  
Vol 609 ◽  
Author(s):  
T. Brammer ◽  
H. Stiebig ◽  
A. Lambertz ◽  
W. Reetz ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Extraction Efficiency ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Microcrystalline Silicon ◽  
Temperature Dependent ◽  
Dependent Transport ◽  
Silane Concentration ◽  
Interface Effects

ABSTRACTThe optoelectronic behavior of diodes deposited by plasma enhanced chemical vapor deposition was investigated for a series of different silane concentrations in the gas phase. The purpose of this work was to correlate device characteristics with inherent properties of microcrystalline silicon by experiments and numerical simulations. Dark diode characteristics and, therefore, the open circuit voltage behavior of this series were dominated by the bulk properties of the i-layer (equilibrium carrier concentration) as shown by numerical modeling. Measurement of the solar cell output parameters as a function of the temperature showed that the fill factor of solar cells with small silane concentrations is dominated by the dark diode characteristics. This is in contrast to the temperature dependent fill factor of solar cells with large silane concentration which is limited by the extraction efficiency of the photogenerated carriers. Interface effects dominated the temperature dependent blue response. The gain in blue response increased with temperature and silane concentration by up to 200 % which revealed transport limiting material properties in the vicinity of the p/i-interface. This behavior was attributed to the nucleation region.

Controlling Band Alignment at the Back Interface of Cadmium Telluride Solar Cells using ZnTe and Te Buffer Layers

MRS Advances ◽  
2019 ◽  
Vol 4 (16) ◽  
pp. 913-919 ◽  
Author(s):  
Fadhil K. Alfadhili ◽  
Adam B. Phillips ◽  
Geethika K. Liyanage ◽  
Jacob M. Gibbs ◽  
Manoj K. Jamarkattel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Critical Role ◽  
Open Circuit ◽  
Band Alignment ◽  
Buffer Layers ◽  
Device Performance ◽  
Band Bending ◽  
Cdte Solar Cells ◽  
Hole Current

ABSTRACTFormation of a low barrier back contact plays a critical role in improving the photoconversion efficiency of the CdTe solar cells. Incorporating a buffer layer to minimize the band bending at the back of the CdTe device can significantly lower the barrier for the hole current, improving open circuit voltage (VOC) and the fill factor. Over the past years, researchers have incorporated the both ZnTe and Te as buffer layers to improve CdTe device performance. Here we compare device performance using these two materials as buffer layers at the back of CdTe devices. We show that using Te in contact to CdTe results in higher performance than using ZnTe in contact to the CdTe. Low temperature current density-voltage measurements show that Te results is a lower barrier with CdTe than ZnTe, indicating that Te has better band alignment, resulting in less downward bending in the CdTe at the back interface, than ZnTe does.

Efficient 18 Å/s Solar Cells with All Silicon Layers Deposited by Hot-Wire Chemical Vapor Deposition

2000 ◽  
Vol 609 ◽  
Author(s):  
Qi Wang ◽  
Eugene Iwaniczko ◽  
Yueqin Xu ◽  
Wei Gao ◽  
Brent P. Nelson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Time ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Hot Wire ◽  
Edge Layer ◽  
Hydrogenated Amorphous ◽  
Sun Light

ABSTRACTEfficient hydrogenated amorphous silicon (a-Si:H) n-i-p solar cells have been fabricated with all doped and undoped a-Si:H layers deposited by hot-wire chemical vapor deposition (HWCVD). The total deposition time of all layers, except the top ITO-contact, is less than 4 minutes. On an untextured stainless steel (SS) substrate, an initial efficiency of 7.12% is reached, with a stable efficiency of 5.4% after 1000 hours 1 sun light soaking. This initial efficiency is reached by incorporating into the p/i interface about 60 Å of intrinsic a-Si:H “edge” material grown under conditions near the transition to microcrystallinity. This edge layer increases the cell's fill factor from 0.60 to 0.68 and the best open-circuit voltage is about 0.88 V. Using textured Ag/ZnOcoated SS supplied by United Solar Corporation, preliminary results of an all-HWCVD solar cell give an initial efficiency of 8.7 %.

A novel p-type and metallic dual-functional Cu–Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells

2016 ◽  
Vol 52 (71) ◽  
pp. 10708-10711 ◽  
Author(s):  
Qinxian Lin ◽  
Yantao Su ◽  
Ming-Jian Zhang ◽  
Xiaoyang Yang ◽  
Sheng Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Performance Improvement ◽  
High Performance ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Dual Functional ◽  
P Type

Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells.

scholarly journals p-Type Polymers for Templated Crystallization of Perovskite Films and Interface Optimization for High Performance Solar Cells

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 654
Author(s):  
Wei-Wei Zuo ◽  
Weifei Fu ◽  
Wan-Sheng Zong ◽  
Shen-Gang Xu ◽  
Ying-Liang Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
High Performance ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Device Performance ◽  
Phase Purity ◽  
Perovskite Material ◽  
P Type

The purity of the perovskite material is of paramount importance as it determines the optoelectronic properties and, hence, the device performance. However, the error during the experiment and incomplete crystallization is inevitable, leading to a low quality. Here, two p-type polymers were designed to template the crystallization of perovskite to obtain perovskite films with higher crystallinity and higher phase purity. The polymers at the perovskite/transport interface could also improve the charge transfer and, thus, the device performance. In this study, the highest efficiency device achieved an efficiency value of ~19% with improved open-circuit voltage and fill factor.

Structural Evolution of Top-Junction a-Si:C:H:B and Mixed-Phase (Microcrystalline Si)-(a-Sil-xCx:H) p-Layers in a-Si:H n-i-p Solar Cells

1996 ◽  
Vol 420 ◽  
Author(s):  
Joohyun Koh ◽  
J. S. Burnham ◽  
Yeeheng Li ◽  
Hongyue Liu ◽  
Ing-Shin Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Volume Fraction ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Mixed Phase ◽  
Continuous Film ◽  
Layer Deposition ◽  
The Individual ◽  
Hydrogenated Amorphous

AbstractWe have applied real time spectroellipsometry (RTSE) to study hydrogenated amorphous silicon (a-Si:H) solar cells fabricated in the Cr/n-i-p configuration using plasma-enhanced chemical vapor deposition (PECVD) in a single-chamber system. The microstructural evolution of the n-, i-, and p-layers of the devices has been determined, including the thicknesses of the bulk, interface, and surface roughness layers versus time. The optical properties of the individual layers, including the dielectric functions and optical gaps, have also been obtained in the same analysis. In this study, we have focused on i/p interface formation and, in particular, on the nucleation process for differently-prepared a-Si:C:H and mixed-phase μc-Si:H/a-Si1-xCx:H p-layers on the a-Si:H i-layer. From the thickness dependence of the p-layer void volume fraction, we can obtain an estimate of the thickness at which nuclei make contact to form a continuous film. For the mixed-phase p-layers, the nuclei contact thickness can be reduced by exposing the i-layer to a H2-plasma prior to p-layer deposition. We have found that for similarly-prepared p-layers this reduction in contact thickness leads to an increase in open-circuit voltage of the solar cell

Nanostructure Control of Si and Ge Quantum Dots Based Solar Cells Using Plasma Processes

2014 ◽  
Vol 783-786 ◽  
pp. 2022-2027 ◽  
Author(s):  
Masaharu Shiratani ◽  
Giichiro Uchida ◽  
Hyun Woong Seo ◽  
Daiki Ichida ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Electrical Power ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Nanoparticles ◽  
Sensitized Solar Cells

We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024%, fill factor of 0.32, short-circuit current of 0.75 mA/cm2and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036%, fill factor of 0.38, short-circuit current of 0.64 mA/cm2and open-circuit voltage of 0.15 V.

scholarly journals High-performance perovskite solar cells obtained by hybridizing SnS quantum dots with CH3NH3PbI3

2021 ◽  
Author(s):  
Liya Zhou ◽  
Xiaoying Zhong ◽  
Hua Fan ◽  
Jiangying Lu ◽  
Yingjun Ou
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Fill Factor ◽  
Crystal Size ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Large Crystal ◽  
Photoelectric Conversion

Abstract In this work, SnS quantum dot (QDs) were added into the CH3NH3PbI3 (MAPI) perovskite precursor solution to fabricate MAPI/SnS QDs films with preferred (110) orientation and a perovskite film with large crystal size. This hybrid material showed increased light harvesting ability and a red shift with respect to the number of SnS QDs. As a result, an enhanced performance was achieved in the perovskite solar cells (PSCs) based on MAPI/SnS QDs prepared from the S5, exhibiting a maximum photoelectric conversion efficiency (PCE) of 10.15%, an open-circuit voltage (Voc) of 1.41 V and a fill factor (FF) of 65%.

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