Beam Shaping for Cw Laser Recrystallization of Polysilicon Films

1982 ◽  
Vol 13 ◽  
Author(s):  
P. Zorabedian ◽  
C.I. Drowley ◽  
T.I. Kamins ◽  
T.R. Cass
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Beam Shaping ◽  
Grain Structure ◽  
Shaped Beam ◽  
Cw Laser ◽  
Laser Recrystallization ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Polysilicon Films

ABSTRACTA shaped laser beam has been used for laterally seeded recrystallization of polysilicon films over oxide. Direct maps of the shaped-beam intensity distribution in the wafer plane are correlated with the grain structure of the recrystallized polysilicon. Using 60% overlapping of shaped-beam scans along <100> directions, we have obtained seeded areas one mm wide and 50 to 500μm long. These consist of 40μm-wide adjacent single-crystal strips regularly separated by low-angle grain boundaries extending laterally away from the seed openings. The spacing between grain boundaries is equal to the scan spacing, providing a means for controlling the location of grain boundaries in otherwise defect-free, single-crystal films.

Soi Technologies at the CNET

1983 ◽  
Vol 23 ◽  
Author(s):  
Soi group
Keyword(s):  
Single Crystal ◽  
Electrical Characterization ◽  
Large Single Crystal ◽  
Cw Laser ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Laser Systems ◽  
Si Films

ABSTRACTFor the recrystallization of poly-Si films deposited on oxidized Si wafers, we focus our research on lamp and cw laser systems. We have obtained large single-crystal films using both techniques. “Selective annealing” allows localization of the remaining defects in the recrystallized films. Crystallographic as well as electrical characterization confirm the device-worthy potential of this material.

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

The P-H-T effects on the electric resistance and magnetoresistance of La0.7Sr0.1Pb0.2MnO3 single crystal films

2001 ◽  
Vol 27 (6) ◽  
pp. 451-453 ◽  
Author(s):  
S. S. Kucherenko ◽  
V. P. Pashchenko ◽  
P. I. Polyakov ◽  
S. I. Khartsev ◽  
V. A. Shtaba
Keyword(s):  
Single Crystal ◽  
Electric Resistance ◽  
Single Crystal Films ◽  
Crystal Films
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