Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

scholarly journals Photovoltaic effect in Light Emitting Diodes

2016 ◽  
Vol 1 (1) ◽  
pp. 30-36
Author(s):  
K. Remidi ◽  
A. Cheknane ◽  
M. Haddadi
Keyword(s):  
Theoretical Model ◽  
Experimental Work ◽  
Photovoltaic Effect ◽  
Research Work ◽  
Electrical Characterization ◽  
Experimental System ◽  
Photoelectric Effect ◽  
Electrical Characteristics ◽  
Light Emitting

This paper describes an experimental work on the electrical characterization of commercial LED of different colors and their photoelectric effect. A research work has been carried out to develop the experimental measurement in order to show the presence of a photovoltaic effect on LEDs. For this purpose, we measured the electrical characteristics of individual LED and studied their light intensities using a pyranometer EPLEY. This work focused mainly on red, green and yellowLEDs. Moreover, we have implemented an experimental system for the measurement of sensitivity of different LEDs depending on the power of light from a light source. A comparison was made between theoretical model and experimental results.

Effect of Thermomechanical Processing on Grain Size, Texture and Mechanical Properties of Pure Magnesium

2020 ◽  
Vol 985 ◽  
pp. 97-108
Author(s):  
Mouhamadou Moustapha Sarr ◽  
Motohiro Yuasa ◽  
Hiroyuki Miyamoto
Keyword(s):  
Mechanical Properties ◽  
Grain Size ◽  
Yield Stress ◽  
Thermomechanical Processing ◽  
Pure Magnesium ◽  
Grain Structure ◽  
Misorientation Distribution ◽  
Processed Material ◽  
Texture Characterization

This study aims to investigate the effect of processing routes (A and Bc) and temperature on microstructure, texture and mechanical properties of pure magnesium was studied in this research. An extruded pure magnesium (~99,9 %) was subjected to severe plastic deformation (SPD) by ECAP. Deformation was conducted at 523K and 473K and two different processing routes (A and Bc) were used to control the texture. The microstructure and texture characterization of the pressed materials were carried out. It was found that the microstructure displayed a bimodal grain structure after two passes and then became homogeneous after four passes following both routes A and Bc. The misorientation distribution was examined and the results revealed that the fraction of high angle grain boundaries (HAGB) was higher at temperature 473K. The texture was randomized following route Bc whereas it became strengthened in route A after four passes. According to the Hall-Petch (HP) relationship, the yield stress of polycrystalline metals increases with a decrease in grain size. In this study, a positive slope k was achieved in the strengthened texture while a negative one was obtained in the softened texture. The ductility of ECAP processed material was considerably improved (from 23% to 38%) without sacrificing the yield stress by route Bc at 423K.

Microstructural and Electrical Characterization of Barium Strontium Titanate Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Russell F. Pinizzotto ◽  
Robert Tsu ◽  
Hung-Yu Liu ◽  
...  
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Microstructural Characterization ◽  
Plan View ◽  
Pt Electrodes ◽  
Average Grain Size ◽  
Metal Organic ◽  
Bst Thin Film ◽  
Anneal Time

ABSTRACTThe kinetics of BST thin film grain nucleation and growth caused by rapid thermal annealing have been investigated. A series of Ba0.67Sr0.33Tii0.5O3 films were deposited on Pt electrodes using a metal-organic decomposition process. The effects of anneal time and temperature on BST grain sizes were studied by altering the processing conditions during RTA. A series of films were annealed by RTA at temperatures ranging from 550°C to 950°C for times ranging from 30 to 120 seconds. Crystallographic and microstructural characterization were done using XRD and TEM. The XRD results indicated that BST grain size increased with increasing anneal temperature, but was not affected by anneal time. Plan-view TEM indicated that BST grains were imbedded in an amorphous matrix. The average grain size was on the order of 200 Å.

Structural and Electrical Characterization of Diatom Pinnularia sp. Biosilica Coated with CdS Thin Film

2009 ◽  
Vol 1187 ◽  
Author(s):  
Timothy Gutu ◽  
Clayton Jeffryes ◽  
Wei Wang ◽  
Chih-hung Chang ◽  
Gregory Rorrer ◽  
...  
Keyword(s):  
Thin Film ◽  
Cell Walls ◽  
Electrical Characterization ◽  
Semiconductor Diode ◽  
Electrical Characteristics ◽  
Cds Thin Film ◽  
Diode Behavior ◽  
Microscopy Techniques ◽  
Freshwater Environments

AbstractDiatoms are unicellular, photosynthetic microalgae that live in marine and freshwater environments. The cell walls of diatoms are composed of biosilica and have exceedingly hierarchical ornate nanostructures. Consequently, these nanostructures have long been regarded as the paradigm for future silica nanotechnology. We have coated diatom Pinnularia sp. biosilica with a thin film of CdS using a chemical bath deposition technique. Possible uses for these CdS coated diatoms include the development of new nanodevice fabrication techniques and optoelectronic applications. Electron microscopy techniques were utilized to study their morphologies. Their electrical characteristics were investigated using an Agilent 4156C precision semiconductor parameter analyzer and a Cascade probe station. The CdS coating was found to be dense, adherent and nanostructured. The diatoms coated with CdS exhibited both metallic and semiconductor diode behavior.

Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

2007 ◽  
Vol 7 (11) ◽  
pp. 4101-4105
Author(s):  
Ahnsook Yoon ◽  
Woong-Ki Hong ◽  
Takhee Lee
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Electrical Characteristics ◽  
Zno Nanowire ◽  
Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

Structural and Electrical Characterization of Doped Zirconia Nanostructured Fibres

2012 ◽  
Vol 545 ◽  
pp. 285-289
Author(s):  
Adrian Lowe ◽  
Deborah Eve Kho Siu Chu ◽  
Li Lu
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Electrospinning Process ◽  
Electrical Performance ◽  
Energy Storage Materials ◽  
Impedance Response ◽  
Average Grain Size ◽  
Tetragonal Form ◽  
Cv Measurements

Pure and lithium-doped zirconia fibres have been produced using the electrospinning process. These fibres are seen to be mesoporous in nature and possess a dense outer skin that correlates with the existance of tetragonal structure. This tetragonal form exists in materials below a certain average grain size and also correlates well with capacitance retention, CV measurements and impedance response. During electrical performance, an initial irreversible solid electrolyte interface is believed to form and average grain size has a significant effect. This study suggests that in this mesoporous/skin form, electrospun zirconia fibres are promising energy storage materials.

scholarly journals Electrical Characterization of an Atmospheric Pressure Plasma Jet

2019 ◽  
Vol 5 (1) ◽  
pp. 85-90
Author(s):  
S. K. KC ◽  
S. Sharma ◽  
R. Shrestha ◽  
D. P. Subedi
Keyword(s):  
Power Consumption ◽  
Capillary Tube ◽  
Electrical Characterization ◽  
Atmospheric Pressure Plasma ◽  
Plasma Jet ◽  
Voltage Divider ◽  
External Diameter ◽  
Electrical Characteristics ◽  
Lissajous Figures

In this work, a plasma jet has been generated with capillary tube having external diameter 4.0 mm and thickness 1.0 mm. Argon has been used as a working gas. The electrical characteristics of this device like instantaneous power, and discharge current have been measured. The effects of applied voltage on the dissipated power of the device have been investigated. The current is measured with the current probe whereas the voltage is measured from the locally fabricated voltage divider having ratio 1201:1. The electron density has been found out using power balance method. In addition, the power consumption during the discharge has also been studied with the help of Lissajous Figures. The calculated power consumption has been compared with other manual as well as I-V plots.

Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

2008 ◽  
Vol 23 (2) ◽  
pp. 551-555 ◽  
Author(s):  
Bilge Imer ◽  
Benjamin Haskell ◽  
Siddharth Rajan ◽  
Stacia Keller ◽  
Umesh K. Mishra ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Defect Density ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Extended Defects ◽  
Electrical Characteristics ◽  
Lateral Epitaxial Overgrowth ◽  
High Defect Density ◽  
Si Doped

We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 × 1019 cm−3 as 261.12 cm2/Vs for SLEO a-GaN and 106.77 cm2/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was ∼12% less than planar samples.

Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects

2015 ◽  
Vol 821-823 ◽  
pp. 733-736 ◽  
Author(s):  
Yukimune Watanabe ◽  
Noriyasu Kawana ◽  
Tsuyoshi Horikawa ◽  
Kiichi Kamimura
Keyword(s):  
Gate Voltage ◽  
Light Emission ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Drain Current ◽  
High Density ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Emission Light

We have fabricated lateral MOSFETs on heteroepitaxial 3C-SiC films included high density of defects. Electrical characteristics of 3C-SiC MOSFETs and their temperature dependence were measured to discuss effects of defects on the electrical characteristics. A field effect mobility of 156 cm2/Vs was obtained at room temperature. After applying a drain voltage of 10 V or higher, the drain current - gate voltage curve shifted toward the positive gate voltage. This shift was caused mainly by the charge trapping in the gate oxide. The light emission was observed on the surface of the active MOSFET. The spatial distribution of the emission light from MOSFETs indicated that the charge was generated at the source edge of the gate channel.

Characterization of Nanostructured Electrodeposited NiCo Samples by use of Electron Backscatter Diffraction (EBSD)

2005 ◽  
Vol 880 ◽  
Author(s):  
Alice Bastos ◽  
Dierk Raabe ◽  
Stefan Zaefferer ◽  
Christopher Schuh
Keyword(s):  
Grain Size ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Growth Direction ◽  
Grain Structure ◽  
Local Texture ◽  
Average Grain Size ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractA Cobalt-20wt.% Nickel polycrystal produced by electrodeposition has been investigated in planar and cross sections using a high resolution scanning electron microscope. The local texture, grain size, amount of phase and grain boundaries, were characterized by Electron Backscatter Diffraction (EBSD). The average grain size perpendicular to the grain growth direction was 400 nm. Parallel to it, a pronounced bimodal grain structure was observed with grains reaching more than 10 μm and grains of approximately 800 nm diameter.

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