The Effect of Water Vapor and Oxygen in the Processing Environment on the Properties of Sputtered a-Si:H Films

1989 ◽  
Vol 149 ◽  
Author(s):  
Cheng Wang ◽  
G. N. Parsons ◽  
G. Lucovsky
Keyword(s):  
Water Vapor ◽  
Electrical Properties ◽  
Systematic Study ◽  
Defect Density ◽  
Argon Plasma ◽  
Growth Surface ◽  
Optical And Electrical Properties ◽  
Infra Red ◽  
Plasma Extract ◽  
Substrate Temperatures

ABSTRACTA systematic study of the effect of the trace impurity of oxygen and water vapor in the processing environment on the infra-red (IR), optical and electrical properties, and defect density of sputtered a-Si:H films is reported. The results are that small contents of water introduced into the argon plasma extract H-atoms from the growth surface, thereby reducing total hydrogen content and polyhydride formation in films deposited at low substrate temperatures, <150°C. This leads to a decrease of the defect density, and hence, to improvements in the photoconductivity (Δσ) and the associated quantum efficiency-mobility-lifetime(ημτ) product.

scholarly journals Influence of bulk defects in SnS absorber layer on optical and electrical properties of solar cell

2021 ◽  
Vol 2114 (1) ◽  
pp. 012044
Author(s):  
Mussab J. Ahmed ◽  
Ayed N. Saleh
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Defect Density ◽  
Absorber Layer ◽  
Simulation Program ◽  
Optical And Electrical Properties ◽  
Absorption Layer ◽  
Low Concentrations ◽  
Concentration Of Impurities

Abstract In this research, the effect of bulk defect on the performance of the solar cell was studied by using the AFORS-HET simulation program. This was done by varying the density of defects including both Acceptor-like and donor-like within the SnS absorption layer. The thickness of the SnS layer was changed from 600nm to 9000nm with the change in bulk defect density in the same layer from (1E10 to 1E17 cm−3). The results showed that when the density of defects is less than 1E14cm−3, it has no effect on the performance of the solar cell, but its effect appears after this concentration, On the contrary, it is the effect of thickness, the results showed that the change in thickness at the defect density of E16cm−3 does not affect on the optical and electrical properties. Also, the results showed that the effect of defects is greatest at low concentrations of Na impurities, and this effect begins to decrease with increasing the concentration of impurities.

Effects of Intermittent Deposition on the Defect Density in a-Si:H

1994 ◽  
Vol 336 ◽  
Author(s):  
Toshihiro Kamei ◽  
Nobuhiro Hata ◽  
Akihisa Matsuda
Keyword(s):  
Waiting Time ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogen Desorption ◽  
Growth Surface ◽  
Dangling Bond ◽  
Monolayer Growth ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures ◽  
Mechanical Shutter

ABSTRACTEffects of intermittent deposition on the defect density in hydrogenated Amorphous silicon (a-Si:H) are investigated at various substrate temperatures by using a mechanical shutter, while maintaining the discharge continuously. The intermittent deposition experiments, where monolayer growth and intermission (waiting time) are repeated in cycles, enable us to study surface dangling bond (DB) recombination and thermal hydrogen desorption separately from other reactions on the growth surface. The defect density in films prepared at lower substrate temperatures decreases with the waiting time, while that deposited at higher substrate temperatures increases with the waiting time.

scholarly journals Control of Electrical and Optical Parameters of Humidity Sensors Active Elements Based on Tin Oxides Films with Variable Composition

2019 ◽  
Vol 10 (2) ◽  
pp. 138-150 ◽  
Author(s):  
D. V. Adamchuck ◽  
V. K. Ksenevich
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gas Sensors ◽  
Annealing Temperature ◽  
Argon Plasma ◽  
Electromagnetic Spectrum ◽  
Optical And Electrical Properties ◽  
High Electrical Conductivity ◽  
Synthesis Parameters ◽  
Tin Oxides

The aim of this work is development of technique for synthesis of tin oxides films with various stoichiometric composition, characterized by high electrical conductivity and light transmittance in the UV and visible range of the electromagnetic spectrum, for their further application as humidity and gas sensors, as well as electrodes for electro-and photocatalytic converters.Nonstoichiometric SnO/SnO2 /SnO2−δ films were synthesized by reactive magnetron sputtering of tin onto glass substrates in argon plasma with oxygen addition and with subsequent thermal oxidation of the formed layers in air. To change the structural, optical, and electrical properties of the films and to find out the optimal synthesis parameters, the oxygen content during the deposition process and the annealing temperature in air were varied in the range of 0–2 vol. % and of 200–450 °C, respectively. The characterization of the films was carried out using a 4-probe method for measuring the electrical resistance, X-ray diffraction, and optical spectroscopy of light transmission.As a result of a comprehensive analysis of the structural, optical and electrical properties of the films, it was found that the optimal synthesis parameters to obtain the most transparent and conductive coatings promising for use as humidity, gas sensors and in photovoltaic devices are the following: oxygen content in argon plasma during sputtering process is ≈ 0,8–1,2 vol. %, the annealing temperature in air is ≈ 350–375 °C. In this case a polycrystalline film with high electrical conductivity and high transmittance in the visible and UV regions of the electromagnetic spectrum with prevailing of tin dioxide phase with structural defects (oxygen vacancies) is formed.

The Influence of Annealing in Saturated Water Vapor on LiNbO3 Crystals Optical and Electrical Properties

2015 ◽  
Vol 230 ◽  
pp. 233-237 ◽  
Author(s):  
Aleksandr V. Yatsenko ◽  
A.S. Pritulenko ◽  
S.V. Yevdokimov ◽  
Dmytro Yu. Sugak ◽  
I.I. Syvorotka ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Water Vapor ◽  
Electrical Properties ◽  
Temperature Dependence ◽  
Optical Spectra ◽  
Optical And Electrical Properties ◽  
Saturated Water Vapor ◽  
Hydrogen Annealing ◽  
Saturated Water

The temperature dependence of the dark electrical conductivity of the LiNbO3(LN) crystals annealed in saturated H2O and D2O vapor in the range 293...400 K is investigated. It is found that the activation energy of the electrical conductivity is equal to (0.71 ± 0.02) eV and is close this value of LN samples, reduced in hydrogen. Annealing in ampoules with H2O vapor also lead to LN optical spectra changes such annealing in H2. The nature of this phenomenon is discussed.

Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112̄0) sapphire grown by rf-molecular beam epitaxy

RSC Advances ◽  
2015 ◽  
Vol 5 (89) ◽  
pp. 73261-73267 ◽  
Author(s):  
T. C. Shibin Krishna ◽  
Neha Aggarwal ◽  
G. Anurag Reddy ◽  
Palak Dugar ◽  
Monu Mishra ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Systematic Study ◽  
Molecular Beam ◽  
Carrier Dynamics ◽  
Rf Plasma ◽  
Optical And Electrical Properties ◽  
Defect States ◽  
Gan Film

A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on a-plane (112̄0) sapphire substrate via rf-plasma molecular beam epitaxy.

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