Dual Implantations of Ti and C into Sintered Α-Sic and Hot Pressed Si3n4

ABSTRACTDual ion implantations of Ti+ and C+ into sintered a-SiC and hot pressed SÌ3N4 have been studied by Rutherford backscattering spectroscopy (RBS) combined with plan/cross section view transmission electron microscopy (TEM). The samples were analyzed before and after annealing at 1200°C for 2 hours in a vacuum of 1x10-6 torr. The results were compared with single ion implantation of Ti+. RBS analysis showed that no oxidation occurred during annealing and Ti diffused toward the surface in both SiC and SigN^ Cross section TEM analysis revealed the formation of TiC precipitates in SiC due to both dual (Ti+ + C+) and single (Ti+) ion implantations. Precipitates were found to form in SÌ3N4 as well; however, because of very close proximity of observed d values with those of TiC, TiN and β-SiC, it was not possible to uniquely identify the chemical nature of these precipitates. Thermo-dynamic calculations were performed to explain the observed results.

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TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

Microscopy and Microanalysis ◽

10.1017/s143192761009392x ◽

2010 ◽

Vol 16 (6) ◽

pp. 662-669 ◽

Cited By ~ 8

Author(s):

S. Simões ◽

F. Viana ◽

A.S. Ramos ◽

M.T. Vieira ◽

M.F. Vieira

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Cross Section ◽

Ion Beam ◽

Microstructural Characterization ◽

Multilayer Thin Films ◽

Tem Analysis ◽

Plan View ◽

Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

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Structure of Shear Bands in Zirconium-Based Metallic Glasses Observed by Transmission Electron Microscopy

MRS Proceedings ◽

10.1557/proc-754-cc7.9 ◽

2002 ◽

Vol 754 ◽

Author(s):

Xiaofeng Gu ◽

Kenneth J. T. Livi ◽

Todd C. Hufnagel

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Metallic Glasses ◽

Defect Structure ◽

Shear Bands ◽

Tem Analysis ◽

Transmission Electron ◽

Before And After ◽

High Resolution Tem ◽

Band Spacing

ABSTRACTWe have used transmission electron microscopy (TEM) to investigate the structure of shear bands produced by bending electron-transparent Zr52.5Cu17.9Ni14.6Al10Ti5 metallic glass specimens. Shear bands were located by comparing the structure of the specimens before and after deformation. The shear band spacing is influenced by the structure of the specimen; portions of the specimen with a significant population of nanocrystals show a smaller separation between shear bands. Quantitative high resolution TEM analysis based on ratio technique has been used to explore the defect structure in shear bands. High density and void-like defects with size of about 1 nm were found in shear bands formed in both amorphous and nanocrystalline areas. A simple model was proposed to explain the formation of these defects.

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Microstructure of laser-irradiated, conducting Kapton polyimide

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138889 ◽

1995 ◽

Vol 53 ◽

pp. 502-503

Author(s):

D. L. Callahan ◽

Z. Ball ◽

H. M. Phillips ◽

R. Sauerbrey

Keyword(s):

Electron Microscopy ◽

Phase Transition ◽

Transmission Electron Microscopy ◽

Cross Section ◽

Film Surface ◽

Cross Sectional ◽

General Utility ◽

Transmission Electron ◽

Considerable Debate ◽

Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

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Transmission Electron Microscopy of an Aluminum-Silver-Stainless Steel Solid State Bond

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100117832 ◽

1985 ◽

Vol 43 ◽

pp. 172-173

Author(s):

M. J. Carr ◽

J. F. Shewbridge ◽

T. O. Wilford

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Solid State ◽

Specimen Preparation ◽

Dimensional Control ◽

Tem Analysis ◽

Metal Parts ◽

Dissimilar Metal ◽

Transmission Electron ◽

Short Time

Strong solid state bonds are routinely produced between physical vapor deposited (PVD) silver coatings deposited on sputter cleaned surfaces of two dissimilar metal parts. The low temperature (200°C) and short time (10 min) used in the bonding cycle are advantageous from the standpoint of productivity and dimensional control. These conditions unfortunately produce no microstructural changes at or near the interface that are detectable by optical, SEM, or microprobe examination. Microstructural problems arising at these interfaces could therefore easily go undetected by these techniques. TEM analysis has not been previously applied to this problem because of the difficulty in specimen preparation. The purpose of this paper is to describe our technique for preparing specimens from solid state bonds and to present our initial observations of the microstructural details of such bonds.

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The use of an energy-filtering electron microscope to reduce chromatic aberration in images of thick biological specimens

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100142116 ◽

1986 ◽

Vol 44 ◽

pp. 88-91

Author(s):

L. D. Peachey ◽

J. P. Heath ◽

G. Lamprecht

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Beam ◽

Cross Section ◽

Electron Scattering ◽

Chromatic Aberration ◽

Image Resolution ◽

Incident Electron Energy ◽

Energy Filtering ◽

Transmission Electron

Biological specimens of cells and tissues generally are considerably thicker than ideal for high resolution transmission electron microscopy. Actual image resolution achieved is limited by chromatic aberration in the image forming electron lenses combined with significant energy loss in the electron beam due to inelastic scattering in the specimen. Increased accelerating voltages (HVEM, IVEM) have been used to reduce the adverse effects of chromatic aberration by decreasing the electron scattering cross-section of the elements in the specimen and by increasing the incident electron energy.

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TEM Sample Preparation Tricks for Advanced DRAMs

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0318 ◽

2015 ◽

Author(s):

Ching Shan Sung ◽

Hsiu Ting Lee ◽

Jian Shing Luo

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Tem Analysis ◽

Cross Sectional ◽

Transmission Electron ◽

Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2002p0313 ◽

2002 ◽

Author(s):

Chin Kai Liu ◽

Chi Jen. Chen ◽

Jeh Yan.Chiou ◽

David Su

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Specimen Preparation ◽

Tem Analysis ◽

Sensitive Issue ◽

Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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