Morphology and surface reconstructions of m-plane GaN
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ABSTRACTM-plane GaN(1100) is grown by plasma assisted molecular beam epitaxy on ZnO(1100) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1100) GaN films are obtained, with a slate like surface morphology. On the GaN(1100) surfaces, reconstructions with symmetry of c(2×2) and approximate “4×5” are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the “4×5” structure consisting of ≥ 2 monolayers of Ga terminating the GaN surface.
2007 ◽
Vol 298
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pp. 232-234
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1994 ◽
Vol 33
(Part 2, No. 3B)
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pp. L405-L408
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2005 ◽
Vol 274
(3-4)
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pp. 418-424
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1993 ◽
Vol 11
(3)
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pp. 562
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1989 ◽
Vol 7
(2)
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pp. 517-522
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2021 ◽