Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1709-1714 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Yasuhiro Watanabe ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Si Substrate ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices

2001 ◽  
Vol 40 (Part 1, No. 6A) ◽  
pp. 3953-3959 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Mitsunari Itoh ◽  
Junji Saraie ◽  
Toshiyuki Yasui ◽  
Sanghoon Ha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Molecular Beam ◽  
Si Substrate ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Metalorganic Molecular Beam Epitaxy

Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (46) ◽  
pp. 10721-10727 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Yunfang Guan ◽  
Jingling Li ◽  
Xiaona Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Si Substrate ◽  
Structural Perfection ◽  
High Degree

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100).

1989 ◽  
Vol 160 ◽  
Author(s):  
J. Geurts ◽  
J. Finders ◽  
H. Münder ◽  
M. Kamp ◽  
M. Oehlers ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Raman Study

AbstractThe crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(100) is analysed by Raman scattering with variation of the penetration depth and besides bevel polishing or step etching. The region with considerable lattice imperfections is essentially confined to the original buffer layer.

scholarly journals Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

2021 ◽  
Vol 549 ◽  
pp. 149245
Author(s):  
Chaomin Zhang ◽  
Kirstin Alberi ◽  
Christiana Honsberg ◽  
Kwangwook Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Surface Treatments ◽  
Gaas Surface

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1750-1752 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. Caruso ◽  
F. Ren ◽  
J. Kovalchik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics
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