Native Defects, Diffusion, Self-Compensation, and Boron Doping in Cubic Silicon Carbide

1989 ◽  
Vol 162 ◽  
Author(s):  
C. Wang ◽  
J. Bemholc ◽  
R. F. Davis
Keyword(s):  
Silicon Carbide ◽  
Fermi Level ◽  
Theoretical Investigation ◽  
Boron Doping ◽  
Native Defects ◽  
Heavily Doped ◽  
Rich Material ◽  
P Type ◽  
Cubic Silicon Carbide

ABSTRACTWe report the results of a comprehensive theoretical investigation of the effects of stoichiometry and boron doping on the properties of cubic SiC. Supercell calculations using ab initio pseudopotentials show that the lowest energy defect in Si-rich n-type and intrinsic SiC is the electrically inactive Sic antisite, while VC++ is the lowest energy defect in p-type SiC. The electrons released by the carbon vacancies compensate acceptor dopants and lead to strong self-compensation effects when doping occurs during the growth of crystal. In C-rich SiC the dominant defect for all Fermi level positions is the electrically inactive CSi antisite. In stoichiometric and Si-rich cubic SiC, the BC site is energetically preferred, while BC and BSi have similar incorporation energies in C-rich material. In heavily doped p-type SiC the diffusion of BC proceeds by the dissociative (Frank-Turnbull) mechanism.

Analysis of Defects in Heavily-Doped MBE-GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
C.B. Carter ◽  
D.M. Desimone ◽  
H.T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Liquid Phase ◽  
Molecular Beam ◽  
Type Material ◽  
Grown Layer ◽  
Defect Clusters ◽  
Complex Defect ◽  
Heavily Doped ◽  
Rich Material ◽  
P Type ◽  
Very High

ABSTRACTGaAs Has Been Grown By Molecular-Beam Epitaxy (MBE) With Large Concentrations (∼1018CM−2) Of Sn, Si, Ge, And Mn As Dopants. The Heavily-Doped N-Type Material Has Been Found To Contain Regions Of A Very High Dislocation Density. An Analysis Of The Less Complex Defect Areas Shows That The Dislocations Originate In The MBE-Grown Layer. These Observations And Others On More Complex Defect Clusters Are Compared With Recent Studies Of Defects In Material Grown By Liquid Phase Epitaxy (LPE). The More Heavily Doped P-Type Material Contains Discs Of Mn-Rich Material At The Surface Of The MBEgrown Epilayer. Both The Structure And Composition Of These Regions Have Been Examined.

Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures

2006 ◽  
Vol 910 ◽  
Author(s):  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Germanium Alloy ◽  
Temperature Deposition ◽  
P Type ◽  
Cubic Silicon Carbide ◽  
Charged Defects ◽  
Substrate Temperatures

AbstractWe have investigated properties of nanocrystalline hydrogenated cubic silicon carbide (nc-3C-SiC:H) and silicon carbide: germanium alloy (nc-SiC:Ge:H) films deposited by hot-wire chemical vapor deposition (HWCVD) at low temperatures of about 300°C. we found that the density of charged defects was strongly influenced by grain size of the films. In-situ doping into nc-3C-SiC:H films was also carried out. N-type nc-3C-SiC:H films were successfully deposited by using phosphine (PH3) and hexamethyldisilazane (HMDS) as dopants. We found that HMDS is an effective n-type dopant for low temperature deposition of nc-3C-SiC:H films by HWCVD. For the deposition of p-type nc-3C-SiC:H with trimethylaluminum (TMA), it was found that the substrate temperature of above 300°C is required to activate the acceptors. We added dimethylgermane (DMG) into mixture of MMS and H2 to prepare nc-SiC:Ge:H films. The nc-SiC:Ge:H films with Ge mole fraction of 1.9% were successfully deposited.

scholarly journals p-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies

2019 ◽  
Vol 3 (1) ◽  
pp. 830-841 ◽  
Author(s):  
Aiswarya Pradeepkumar ◽  
Mojtaba Amjadipour ◽  
Neeraj Mishra ◽  
Chang Liu ◽  
Michael S. Fuhrer ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Graphene ◽  
P Type ◽  
Cubic Silicon Carbide

Estimation of the Crystallinity of P-type Hydrogenated Nanocrystalline Cubic Silicon Carbide by Conductive Atomic Force Microscopy

2012 ◽  
Vol 1426 ◽  
pp. 347-352
Author(s):  
Daisuke Hamashita ◽  
Yasuyoshi Kurokawa ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Atomic Force Microscopy ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Conductive Atomic Force Microscopy ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type ◽  
Cubic Silicon Carbide

ABSTRACTP-type hydrogenated nanocrystalline cubic silicon carbide is a promising material for the emitter of n-type crystalline silicon heterojunction solar cell due to its lower light absorption and wider bandgap of 2.2 eV. The electrical properties of hydrogenated nanocrystalline cubic silicon carbide can be influenced by its crystallinity. In this study, we propose the use of conductive atomic force microscopy (Conductive-AFM) to evaluate the crystalline volume fraction (fc) of p-nc-3C-SiC:H thin films (20∼30 nm) as a new method instead of Raman scattering spectroscopy, X-ray diffraction, and spectroscopic ellipsometry.

Native Defects in Diamond, Sic, and Si: Energetics and Self-Diffusion

1988 ◽  
Vol 141 ◽  
Author(s):  
A. Antonelli ◽  
C. Wang ◽  
J. Bemholc ◽  
R. F. Davis
Keyword(s):  
Group Iv ◽  
Type Material ◽  
Native Defects ◽  
Self Diffusion ◽  
Direct Exchange ◽  
Group Iv Semiconductors ◽  
Relative Contribution ◽  
Diffusion Phenomena ◽  
Rich Material ◽  
P Type

AbstractWe have investigated, via first principles total energy calculations, the energetics of elementary native defects in group IV semiconductors. Its implications on the relative abundance of these defects and self-diffusion phenomena are analyzed. The results show that in diamond the self-diffusion is dominated by vacancies, because the interstitial and direct exchange mechanisms have much greater activation energy. In SiC stoichiometry plays an important role. For Si-rich compound, Sic-antisite is the dominant defect in the intrinsic and p-type material, while the carbon vacancy is dominant in the n-type material. For C-rich material, the Csi-antisite is dominant regardless the position of the Fermi level. In Si, it well-known that the vacancy, interstitial and direct exchange mechanisms have very similar activation energies. Our results suggest that self-diffusion experiments carried out at various pressures can determine the relative contribution of each of these mechanisms.

scholarly journals Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

2019 ◽  
Vol 93 ◽  
pp. 295-298 ◽  
Author(s):  
M. Spera ◽  
G. Greco ◽  
R. Lo Nigro ◽  
C. Bongiorno ◽  
F. Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
P Type ◽  
Cubic Silicon Carbide

Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals

2016 ◽  
Vol 9 (2) ◽  
pp. 454-460 ◽  
Author(s):  
Kunling Peng ◽  
Xu Lu ◽  
Heng Zhan ◽  
Si Hui ◽  
Xiaodan Tang ◽  
...  
Keyword(s):  
Fermi Level ◽  
Single Crystal ◽  
Single Crystals ◽  
Carrier Concentration ◽  
Heavily Doped ◽  
P Type ◽  
Temperature Plateau

The increased number of carrier pockets near the Fermi level and the optimized carrier concentration in doped SnSe single crystal can lead to a high averageZTave∼ 1.2 from 300 K to 800 K and a peakZTmaxvalue in excess of 2.0 at 800 K along the crystallographicb-axis.

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