Estimation of the Crystallinity of P-type Hydrogenated Nanocrystalline Cubic Silicon Carbide by Conductive Atomic Force Microscopy
Keyword(s):
P Type
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ABSTRACTP-type hydrogenated nanocrystalline cubic silicon carbide is a promising material for the emitter of n-type crystalline silicon heterojunction solar cell due to its lower light absorption and wider bandgap of 2.2 eV. The electrical properties of hydrogenated nanocrystalline cubic silicon carbide can be influenced by its crystallinity. In this study, we propose the use of conductive atomic force microscopy (Conductive-AFM) to evaluate the crystalline volume fraction (fc) of p-nc-3C-SiC:H thin films (20∼30 nm) as a new method instead of Raman scattering spectroscopy, X-ray diffraction, and spectroscopic ellipsometry.
2020 ◽
Vol 6
(2)
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pp. 1901171
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2021 ◽
Vol 129
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pp. 105789
2015 ◽
Vol 54
(5S)
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pp. 05EB02
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2010 ◽
Vol 663-665
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pp. 324-327
2009 ◽
Vol 40
(3)
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pp. 581-592
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