Preparation of Yba2Cu3O7-X. Superconducting Thin Films by Means of Single Target Rf-Sputtering+

1989 ◽  
Vol 169 ◽  
Author(s):  
Herman D.L. Weyten ◽  
R. De Batist ◽  
P. Nagels ◽  
J. Cornelis
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Buffer Layers ◽  
Superconducting Thin Films ◽  
High Tc ◽  
Resistivity Measurements ◽  
Single Target ◽  
Deposited Films ◽  
Post Deposition

AbstractHigh Tc superconducting thin films have been deposited on sapphire by means of RF‐sputtering from a single stoichiometric target of YBa2Cu3O7‐x composition. The YBa2Cu3O7‐x films were deposited in an argon‐oxygen atmosphere on a substrate which reached a temperature of s 400°C during deposition. The study of stoichiometry and homogeneity of the as‐deposited films, by means of electromicroprobe analysis (EMPA), was used to optimize the sputtering parameters of the system. To achieve superconductivity, with an onset of s 90 K, a high‐temperature, post‐deposition thermal treatment in oxygen was necessary. Resistivity measurements show that, with respect to the bulk samples, zero resistivity is lowered as a result of substrate interaction. The use of buffer layers can improve the quality of the superconducting thin films.

PREPARATION OF BUFFER LAYERS ON SAPPHIRE FOR HIGH Tc SUPERCONDUCTING THIN FILMS

1991 ◽  
Vol 05 (19) ◽  
pp. 1267-1273 ◽  
Author(s):  
X. D. WU ◽  
R. E. MUENCHAUSEN
Keyword(s):  
Thin Films ◽  
High Frequency ◽  
Dielectric Constants ◽  
Buffer Layers ◽  
Processing Temperature ◽  
Superconducting Thin Films ◽  
Superconducting Properties ◽  
Stabilized Zirconia ◽  
Low Loss ◽  
High Tc

Sapphire is a preferred substrate for high frequency applications where small dielectric constants and low loss tangents are required. It is also much cheaper than other oxide subsrates such as SrTiO 3, LaAlO 3, NdGaO 3, MgO, and yttria-stabilized zirconia (YSZ) for high T c superconducting thin films. Unfortunately, sapphire is not chemically compatible with the high T c superconductors at the processing temperature required to obtained good superconducting properties. As a result, an appropriate buffer layer on sapphire is required.

Thin films of BiSrCaCu oxide prepared by laser evaporation

1990 ◽  
Vol 5 (2) ◽  
pp. 258-264 ◽  
Author(s):  
J. Perrière ◽  
G. Hauchecorne ◽  
F. Kerhervé ◽  
F. Rochet ◽  
R. M. Defourneau ◽  
...  
Keyword(s):  
Thin Films ◽  
Depth Distribution ◽  
Rutherford Backscattering Spectrometry ◽  
Laser Evaporation ◽  
Superconducting Thin Films ◽  
Resistivity Measurements ◽  
Target Composition ◽  
Annealing Conditions ◽  
Deposition Parameters ◽  
Deposited Films

We have prepared BiSrCaCuO superconducting thin films by the pulsed laser evaporation method, using a YAG or an ArF excimer laser. The as-deposited films, which were enriched in Cu with respect to the bulk target composition Bi2Sr2Ca1Cu2O8 (i.e., the “2212” phase), were converted into the superconducting phase by a subsequent high temperature annealing in oxygen. Resistivity measurements showed superconducting transitions near 90 K, and the highest zero resistivity temperature was 83 K. The influence of the deposition parameters (photon wavelength) and annealing conditions (temperature, duration, and atmosphere) have been studied. The composition and in-depth distribution of the various elements were determined by Rutherford backscattering spectrometry (RBS), and the surface morphology was studied by scanning electron microscopy (SEM).

ANISOTROPIC RESISTIVITY IN Bi2Sr2CaCu2Oy THIN FILMS GROWN ON VICINAL SrTiO3 SUBSTRATES

2006 ◽  
Vol 20 (10) ◽  
pp. 1261-1268
Author(s):  
V. TOMA ◽  
G. ILONCA ◽  
H. RAFFY
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Superconducting Thin Films ◽  
Resistivity Measurements ◽  
Oriented Film ◽  
Linear Behavior ◽  
Underdoped Region ◽  
Out Of Plane ◽  
Semiconducting Behavior

The in-plane resistivity ρab(T) and out-of-plane resistivity ρc(T) are measured for Bi 2 Sr 2 CaCu 2 O 8 superconducting thin films successfully deposited by in situ magnetron RF-sputtering on vicinal (100) SrTiO 3 substrates. Oriented film with c axis inclined with respect to the basal plane by a tilt angle α ≈ 4° was obtained. It was found that for the underdoped region ρab(T) deviates from the high T-linear behavior, which evidences the opening of the pseudogap while from the out-of-plane resistivity measurements, we found that the temperature corresponding to the minimum between metallic and semiconducting behavior appears to reflect the opening of the pseudogap for transport along c axis. We also found that the opening of the pseudogap seen in ρab(T) does not coincide with the pseudogap along c axis.

Characteristics of CIGS thin films prepared by RF sputtering employing CIGS single target

2011 ◽  
Author(s):  
Tae-Won Kim ◽  
Young-Baek Kim ◽  
Sang-In Song ◽  
Chae-Whan Jung ◽  
Jong-Ho Lee
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Single Target

YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Rf Sputtering ◽  
Polycrystalline Diamond ◽  
Fast Response ◽  
Buffer Layers ◽  
Multichip Modules ◽  
Ir Detectors ◽  
Ybco Films ◽  
First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

X-Ray Diffraction Analysis of High Tc Superconducting Thin Films

1989 ◽  
pp. 269-278
Author(s):  
T. C. Huang ◽  
A. Segmüller ◽  
W. Lee ◽  
V. Lee ◽  
D. Bullock ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
High Tc ◽  
X Ray

XPS Study of Bi-Sr-Ca-Cu-O Superconducting Thin Films Prepared by the rf-Sputtering Method

1989 ◽  
Vol 28 (Part 2, No. 2) ◽  
pp. L233-L235 ◽  
Author(s):  
Atsuo Fukui ◽  
Hiroyuki Enomoto ◽  
Hidetaka Natsume ◽  
Yoshiki Takano ◽  
Natsuki Mori ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Superconducting Thin Films ◽  
Xps Study
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