Effects of substrate temperatures on quality of BaO-SrO-ZnO-Nb2O5 thin films by RF-sputtering using Zn-enriched (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic target

2011 ◽  
Vol 23 (5) ◽  
pp. 1094-1098 ◽  
Author(s):  
Feng Shi ◽  
Feifei Ji
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Ceramic Target ◽  
Substrate Temperatures

scholarly journals Partial Reduction/Re-Oxidation Processing of Y-Ba-Cu-O Sputtered Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
F.H. Garzon ◽  
J. G. Beery ◽  
D. K. Wilde ◽  
I. D. Raistrick
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Partial Reduction ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Residual Oxygen ◽  
Ceramic Targets ◽  
Substrate Temperatures

AbstractThin films of Y‐Ba‐Cu‐O were produced by RF sputtering of YBa2Cu3O7‐x ceramic targets, using a variety of plasma compositions, RF power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with Tc values between 40‐60 K, broad transition widths and semiconductor‐like electrical behavior above Tc. Subsequent annealing at 850°C in an inert gas with a residual oxygen partial pressure of ≤10 ppm followed by an oxygen anneal produced high quality thin films: Tc> 85 K with narrow transition widths. The structure and morphology of these films during reduction‐oxidation processing were monitored using X‐ray diffraction and electron microscopy.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Growth of Highly C-Axis Oriented AlN Films at Water Cooling Condition

2013 ◽  
Vol 718-720 ◽  
pp. 20-24
Author(s):  
J. Yang ◽  
X.Q. Jiao ◽  
R. Zhang ◽  
H. Zhong ◽  
Y. Shi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Sputtering ◽  
Cooling Condition ◽  
Water Cooling ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Aln Film ◽  
Influence Of Water

In this work, the aluminum nitride (AlN) thin film with highly c-axis orientation was prepared successfully at water cooling condition by RF sputtering. The influence of water cooling on the crystalline quality of AlN thin film is researched. The crystalline characteristics and microstructure of AlN thin films deposited on Si (111) and Mo/Si (111) were researched by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The results indicated that highly c-axis AlN films can be synthetized at water cooling condition. The AlN film deposited on Mo thin film is titled to the surface, when that is perpendicular to the silicon substrate. Different models are proposed to explain the growth behaviors of AlN thin films on the two kinds of substrates.

The Effect of Substrate Temperatures on the Structural and Optical Properties of Cosputtered ZnO and AlN Thin Films

2012 ◽  
Vol 626 ◽  
pp. 25-28 ◽  
Author(s):  
A. Ismail ◽  
Mat Johar Abdullah
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Rf Sputtering ◽  
Band Gaps ◽  
Zno Thin Films ◽  
Visible Range ◽  
Structural And Optical Properties ◽  
Doped Zno ◽  
Substrate Temperatures

AlN doped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. For AlN doped ZnO at RF powers of 200 W (ZnO target) and 200W (AlN target), the ZnO (002) peak showed the highest intensity at the substrate temperature of 400˚ C. The prepared films showed good transmission of above 72 % in the visible range. The calculated values of energy band gaps were in the range (3.42 eV - 3.54 eV) for the films prepared at different substrate temperatures.

Optical Properties of RF-Sputtered a-SiGe:H:O Alloys

1986 ◽  
Vol 77 ◽  
Author(s):  
J. M. T. Pereira ◽  
P. K. Banerjee ◽  
S. S. Mitra
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Constants ◽  
Rf Sputtering ◽  
Normal Incidence ◽  
Reflection And Transmission ◽  
Amorphous Thin Films ◽  
Optical Gap ◽  
Transmission Measurements ◽  
Substrate Temperatures

ABSTRACTAmorphous thin films of SixGe1-x:O (x = 0.70) were prepared by RF-sputtering at several substrate temperatures. The structural properties of these films were studied by IR spectroscopy and revealed features characteristic of hydrogen and/or oxygen bonded to silicon. The optical constants (n,k) were determined from reflection and transmission measurements at near-normal incidence for photon energies in the range of 1 eV and 2.6 eV. The optical gap was derived from the Taue plot and correlated with the composition of the samples. The increase of hydrogen and/or oxygen decreases the value of the refractive index and increases the optical gap.

scholarly journals Synthesis and Quality of Cr-doped AIN Thin Films Grown by RF Sputtering

2007 ◽  
Vol 12 (4) ◽  
pp. 149-151
Author(s):  
Pham Hong Quang ◽  
Tran Quang Hung ◽  
Ngo Xuan Dai ◽  
Tran Hoai Thanh ◽  
Cheol-Gi Kim
Keyword(s):  
Thin Films ◽  
Rf Sputtering

The structure of thin films sputter deposited from a Ba2 Si2TiO8 ceramic target

1988 ◽  
Vol 3 (1) ◽  
pp. 105-111 ◽  
Author(s):  
H. Yamauchi ◽  
R. J. White ◽  
M. Ayukawa ◽  
T. C. Murray ◽  
J. W. Robinson
Keyword(s):  
Thin Films ◽  
Crystallization Process ◽  
Amorphous Material ◽  
Appreciable Amount ◽  
X Ray Diffraction ◽  
Fixed Temperature ◽  
Ceramic Target ◽  
Sputter Deposited ◽  
Substrate Temperatures ◽  
Kinetics Of

Thin films were sputter deposited from a Fresnoite (Ba2Si2TiO8) ceramic target at substrate temperatures lower than 175°C. The as-deposited thin films were near amorphous with a void network morphology. In spite of the fact that the film compositions were shifted from stoichiometry, x-ray diffraction studies showed that the films crystallized to form randomly oriented Fresnoite grains. The crystallization kinetics were quite sluggish and the resultant activation energy for the crystallization process was 370 ± 30 kJ/mol. Even after annealing for 10 h at 750°C an appreciable amount of amorphous material remained in the thin films. The short-range order in this amorphous material was changed from that of the as-deposited thin films. The overall devitrification kinetics of amorphous Fresnoite thin films at a fixed temperature were represented theoretically by an equation of Tool's type.

Optimization of Zinc Oxide Thin Films for Silicon Surface Acoustic Wave Resonator Applications

2012 ◽  
Vol 518-523 ◽  
pp. 3772-3779 ◽  
Author(s):  
Fatini Sidek ◽  
Anis Nurashikin Nordin ◽  
Raihan Othman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Integrated Circuit ◽  
High Performance ◽  
Rf Sputtering ◽  
Zno Thin Film ◽  
Taguchi Optimization ◽  
Saw Resonators

High quality ZnO thin films are required to produce CMOS SAW resonators operating with low losses and high Q. This work intends to develop high performance CMOS SAW resonators through optimization of both the quality of the ZnO and the design of the SAW resonator. Zinc oxide was chosen for this work as the piezoelectric material due to its superior acoustic propagation properties and compatibility with integrated circuit fabrication techniques. ZnO has demonstrated good performance characteristics for a variety of piezoelectric devices. For optimization of the quality of the deposited ZnO thin film, different RF-sputtering conditions will be used to investigate which condition produces the best piezoelectric quality of the ZnO thin film. The experiments were carried using Taguchi optimization method, which studies a large number of variables with a small number of experiments.

Preparation of Yba2Cu3O7-X. Superconducting Thin Films by Means of Single Target Rf-Sputtering+

1989 ◽  
Vol 169 ◽  
Author(s):  
Herman D.L. Weyten ◽  
R. De Batist ◽  
P. Nagels ◽  
J. Cornelis
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Buffer Layers ◽  
Superconducting Thin Films ◽  
High Tc ◽  
Resistivity Measurements ◽  
Single Target ◽  
Deposited Films ◽  
Post Deposition

AbstractHigh Tc superconducting thin films have been deposited on sapphire by means of RF‐sputtering from a single stoichiometric target of YBa2Cu3O7‐x composition. The YBa2Cu3O7‐x films were deposited in an argon‐oxygen atmosphere on a substrate which reached a temperature of s 400°C during deposition. The study of stoichiometry and homogeneity of the as‐deposited films, by means of electromicroprobe analysis (EMPA), was used to optimize the sputtering parameters of the system. To achieve superconductivity, with an onset of s 90 K, a high‐temperature, post‐deposition thermal treatment in oxygen was necessary. Resistivity measurements show that, with respect to the bulk samples, zero resistivity is lowered as a result of substrate interaction. The use of buffer layers can improve the quality of the superconducting thin films.

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