Thermal Stability of a1-pt Thin Films/Gaas for Self-Aligning Gate Contacts
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ABSTRACTSeveral compositions of Al-Pt thin films have been co-evaporated on GaAs substrates to study the stability of the alloys at high-temperature anneals. The Al concentration in the alloys ranges from 45 at.% to 70 at.%, and we show that the films meet thermal stability requirements imposed by GaAs self-aligning gate technology for compositions between AlPt and Al2Pt.
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2006 ◽
Vol 249
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pp. 127-134
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1999 ◽
Vol 17
(4)
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pp. 1329
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2014 ◽
Vol 521
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pp. 581-585
2004 ◽
Vol 7
(8)
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pp. A235
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