Thermal Stability of A1-Pt Thin Films/GaAs for Self-Aligning Gate Contacts

1990 ◽  
Vol 184 ◽  
Author(s):  
G. D. Wilk ◽  
B. Blanpain ◽  
J. O. Olowolafe ◽  
J. W. Mayer ◽  
L. R. Zheng
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Gaas Substrates ◽  
The Stability ◽  
Thermal Stability Of

ABSTRACTSeveral compositions of A1-Pt thin films have been co-evaporated on GaAs substrates to study the stability of the alloys at high-temperature anneals. The A1 concentration in the alloys ranges from 45 at.% to 70 at.%, and we show that the films meet thermal stability requirements imposed by GaAs selfaligning gate technology for compositions between AIPt and Al2Pt.

Thermal Stability of a1-pt Thin Films/Gaas for Self-Aligning Gate Contacts

1990 ◽  
Vol 181 ◽  
Author(s):  
G. D. Wilk ◽  
B. Blanpain ◽  
J. O. Olowolafe ◽  
J. W. Mayer ◽  
L. R. Zheng
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Gaas Substrates ◽  
The Stability ◽  
Thermal Stability Of

ABSTRACTSeveral compositions of Al-Pt thin films have been co-evaporated on GaAs substrates to study the stability of the alloys at high-temperature anneals. The Al concentration in the alloys ranges from 45 at.% to 70 at.%, and we show that the films meet thermal stability requirements imposed by GaAs self-aligning gate technology for compositions between AlPt and Al2Pt.

Effect of a Third Element on the Stability of NiSi Thin Films on Si

2006 ◽  
Vol 249 ◽  
pp. 127-134 ◽  
Author(s):  
Dominique Mangelinck
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Phase Diagrams ◽  
High Temperatures ◽  
Driving Force ◽  
Ternary Phase ◽  
The Third ◽  
Ternary Phase Diagrams ◽  
The Stability ◽  
Thermal Stability Of

The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900oC leading to a better stability of NiSi at high temperatures. For Ni films on Si1-xGex with x=0.29 and 0.58, no NiSi2 was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this element can also be explained with the ternary phase diagrams.

Thermal stability of coevaporated Al‐Pt thin films on GaAs substrates

1990 ◽  
Vol 57 (4) ◽  
pp. 392-394 ◽  
Author(s):  
B. Blanpain ◽  
G. D. Wilk ◽  
J. O. Olowolafe ◽  
J. W. Mayer ◽  
L. R. Zheng
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Gaas Substrates ◽  
Thermal Stability Of

Improvement of Thermal Stability of ZrB2/Si3N4 Coatings as High-Temperature Solar Selective Absorbers

2014 ◽  
Vol 521 ◽  
pp. 581-585
Author(s):  
Yao Ming Sun ◽  
Xiu Di Xiao ◽  
Guan Qi Chai ◽  
Gang Xu ◽  
Bin Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Substrate Temperature ◽  
Bias Voltage ◽  
X Ray Diffraction ◽  
Substrate Bias Voltage ◽  
X Ray ◽  
Deposition Parameters ◽  
Thermal Stability Of

ZrB2 thin films were prepared by DC magnetron sputtering technique. The microstructure, thermal stability and optical properties of thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometer. The compactness of ZrB2 thin films was studied to improve the thermal stability by optimizing the deposition parameters. The compactness and thermal stability of the coatings were improved with the increase of substrate temperature. However, these properties of the coatings were enhanced firstly and then weakened with the increase of substrate bias voltage. The selectivity of sample deposited at high substrate temperature and suitable bias voltage degraded slightly after annealing at 500 °C/100 h in air. This provided a new way to improve the thermal stability of high-temperature solar selective absorber.

Microstructure, optical properties and thermal stability of ZrB2 and Zr–B–N thin films as high-temperature solar selective absorbers

2014 ◽  
Vol 4 (3) ◽  
pp. 205-212 ◽  
Author(s):  
Yaoming Sun ◽  
Xiudi Xiao ◽  
Guanqi Chai ◽  
Gang Xu ◽  
Bin Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Optical Properties ◽  
High Temperature ◽  
Thermal Stability Of

scholarly journals Comprehensive microstructural and optical characterization of the thermal stability of aluminum-titanium oxynitride thin films after high temperature annealing in air

2021 ◽  
Author(s):  
R. Escobar-Galindo ◽  
I. Heras ◽  
E. Guillén ◽  
F. Munnik ◽  
I. Azkona ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Dielectric Behavior ◽  
Vacuum Arc ◽  
Surface Oxide Layer ◽  
High Temperature Annealing ◽  
Elastic Recoil ◽  
Thermal Stability Of

AbstractThe thermal stability of two AlyTi1-y(OxN1-x) layers prepared by cathodic vacuum arc deposition with different oxygen content was studied after high temperature annealing of the samples in air. These layers were designed to be part of solar-selective coating (SSC) stacks. Compositional and microstructural characterization of the thin films was performed before and after the thermal treatment by elastic recoil detection (ERD), transmission electron microscopy, and Raman spectroscopy. AlyTi1-yN sample was stable after 2 h of annealing at 450 °C. Initial stages of the formation of a surface oxide layer after annealing at 650 °C were observed both by ERD and Raman analysis. Contrarily, no changes were found after 2 h annealing treatment either at 450 and 650 °C in the composition and microstructure of AlyTi1-y(OxN1-x) sample. In both samples, the formation of a surface anatase TiO2 film was reported after 2 h annealing at 800 °C. These compositional and microstructural changes were correlated with the optical properties determined by spectroscopic ellipsometry. A transition from metallic to dielectric behavior with increasing annealing temperature was observed. These results complete the durability studies on the designed SSC based on AlyTi1-y(OxN1-x) materials, confirming that these stacks withstand breakdown at 600 °C in air.

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