Substrate temperature effect on transparent heat reflecting nanocrystalline ITO films prepared by electron beam evaporation

2010 ◽  
Vol 35 (7) ◽  
pp. 1527-1530 ◽  
Author(s):  
Hamid Reza Fallah ◽  
Mohsen Ghasemi varnamkhasti ◽  
Mohammad Javad Vahid
Keyword(s):  
Electron Beam ◽  
Substrate Temperature ◽  
Temperature Effect ◽  
Electron Beam Evaporation ◽  
Ito Films

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

scholarly journals Low-temperature, high-speed reactive deposition of metal oxides for perovskite solar cells

2019 ◽  
Vol 7 (5) ◽  
pp. 2283-2290 ◽  
Author(s):  
Thomas J. Routledge ◽  
Michael Wong-Stringer ◽  
Onkar S. Game ◽  
Joel A. Smith ◽  
James E. Bishop ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Metal Oxides ◽  
High Speed ◽  
Perovskite Solar Cells ◽  
Electron Beam Evaporation ◽  
Reactive Deposition ◽  
Charge Extraction

Perovskite solar cells utilising NiO and TiO2 charge-extraction layers, deposited via high-speed, low substrate-temperature reactive electron-beam evaporation, achieve 15.8% PCE.

Temperature Effect on Mechanical Properties of Aluminum Film

2013 ◽  
Vol 479-480 ◽  
pp. 96-99 ◽  
Author(s):  
Shiuh Chuan Her ◽  
Yi Hsiang Wang
Keyword(s):  
Mechanical Properties ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Temperature Effect ◽  
Vapor Deposition ◽  
Glass Substrate ◽  
Aluminum Film ◽  
Experimental Results ◽  
Aluminum Films

Aluminum films were prepared on the glass substrate by electron-beam vapor deposition. Nanoindentation tests were employed to determine the hardness and Youngs modulus of the Al film. The effect of substrate temperature on the mechanical properties of the Al film was investigated. Experimental results show that the hardness of Al film is increasing with the increase of the substrate temperature. It can also be observed that the Youngs modulus of Al film doesnt significantly depend on the substrate temperature.

PREPARATION OF ADHERENT MnSix FILMS

2002 ◽  
Vol 16 (07) ◽  
pp. 205-215 ◽  
Author(s):  
Q. R. HOU ◽  
Z. M. WANG ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electron Beam ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Solid Phase ◽  
Electron Beam Evaporation ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Reactive Deposition ◽  
Glass Substrates ◽  
Manganese Silicide

The adhesion of manganese silicide ( MnSi x) films on silicon and glass substrates is studied by using the micro-scratch method. The films were prepared by electron beam evaporation and thermal evaporation. To improve adhesion of the films, several techniques including ion bombardment, increasing substrate temperature, and insertion of a silicon intermediate layer were used. Finally, adherent MnSi x(x~1.7) films were prepared through solid phase reaction as well as reactive deposition. The hardness and modulus of the MnSi x(x~1.7) film were measured by a nano-indenter and the values are 8.8±1.0 GPa and 141±15 GPa, respectively.

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE Ta-DOPED ITO FILMS BY ELECTRON-BEAM EVAPORATION

2010 ◽  
Vol 24 (32) ◽  
pp. 3089-3095 ◽  
Author(s):  
J. Y. HUANG ◽  
G. H. FAN ◽  
T. MEI ◽  
S. W. ZHENG ◽  
Q. L. NIU ◽  
...  
Keyword(s):  
Electron Beam ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Conductive Films ◽  
Atomic Force ◽  
Average Optical Transmittance ◽  
Ito Films

Tantalum-doped indium tin oxide ( Ta -doped ITO) transparent conductive films are deposited on glass substrates by electron-beam evaporation. The effects of different Ta concentrations and annealing temperatures on the structural, morphologic, electrical, and optical properties of Ta -doped ITO films are investigated by X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic bixbyite structure of indium oxide and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 1.54×10-4 Ω ·cm is obtained from the ITO film containing 0.2 wt% tantalum annealed at 500°C and the average optical transmittance is over 95% from 425 nm to 460 nm.

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