Optical Investigations of Symmetry Breaking in GaInP2

ABSTRACTWe present experimental evidence for the spontaneous breaking of cubic symmetry in the band structure of films of Ga0 52 1n0 48P grown by organomeltallic vapor phase epitaxy on (100) GaAs substrates. We show how this effect is related to the spontaneous ordering of the alloy, and its correlation with the anomalous lowering of the band-gap observed in these films.

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GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l755 ◽

1993 ◽

Vol 32 (Part 2, No. 6A) ◽

pp. L755-L757 ◽

Cited By ~ 2

Author(s):

Xiong Zhang ◽

Koichi Karaki ◽

Hiroyuki Yaguchi ◽

Kentaro Onabe ◽

Yasuhiro Shiraki ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gaas Substrates

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Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe

10.1117/12.276233 ◽

1997 ◽

Author(s):

Krzysztof Adamiec ◽

Waldemar Gawron ◽

Jozef Piotrowski

Keyword(s):

Band Gap ◽

Vapor Phase ◽

Rf Sputtering ◽

Vapor Phase Epitaxy

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Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2017.01.043 ◽

2017 ◽

Vol 464 ◽

pp. 39-48 ◽

Cited By ~ 3

Author(s):

Yingxin Guan ◽

Kamran Forghani ◽

Honghyuk Kim ◽

Susan E. Babcock ◽

Luke J. Mawst ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Kinetics Study ◽

Surface Kinetics ◽

Organic Vapor ◽

Gaas Substrates ◽

Metal Organic

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Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.03.038 ◽

2010 ◽

Vol 312 (14) ◽

pp. 2056-2059 ◽

Cited By ~ 11

Author(s):

Yohei Konaka ◽

Ken-ichi Ono ◽

Yoshikazu Terai ◽

Yasufumi Fujiwara

Keyword(s):

Phase Separation ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Gaas Substrates

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Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor

Scientific Reports ◽

10.1038/s41598-020-79154-9 ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Galia Pozina ◽

Chih-Wei Hsu ◽

Natalia Abrikossova ◽

Mikhail A. Kaliteevski ◽

Carl Hemmingsson

Keyword(s):

Band Gap ◽

Vapor Phase ◽

Wide Band ◽

Band Gap Energy ◽

Vapor Phase Epitaxy ◽

Structural Quality ◽

Wide Band Gap ◽

Vacancy Defects ◽

Sapphire Substrates ◽

Efficient Power

AbstractGallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial $$\upbeta$$ β -Ga2O3 layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825–850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the $$\upbeta$$ β -Ga2O3 layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type $$\upbeta$$ β -Ga2O3 and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800–825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects.

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