Alx Ga1-x as Growth by OMVPE Using Trimethylamine Alane

1990 ◽  
Vol 204 ◽  
Author(s):  
W. S. Hobson ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
T. D. Harris
Keyword(s):  
Surface Morphology ◽  
Entire Range ◽  
Room Temperature ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Flow Rates ◽  
Room Temperature Photoluminescence ◽  
Compositional Uniformity ◽  
Trimethylamine Alane ◽  
Aluminum Precursor

ABSTRACTWe have investigated the growth of Alx Gal-xAs (0.1 ≤ x ≤ 1) by organometallic vapor phase epitaxy using trimethylamine alane (TMAA1) as the aluminum precursor. A low pressure (30 Torr) reactor was used with hydrogen as the carrier gas. At the high gas velocities (> 1 m · s-1) employed there was no visible deposition upstream of the substrate. AIGaAs epilayers with featureless surface morphology could be obtained over the entire range of composition. The layers exhibited very strong room-temperature photoluminescence and excellent compositional uniformity (x = 0.235 ± 0.002 over a 40 mm diameter). A comparison was made between the electrical and optical characteristics of AlGaAs grown with either trimethylgallium (TMGa) or triethylgallium (TEGa). The hole concentration of the layers grown using TMGa was significantly higher than that with TEGa (e.g., 6–7 × 1017 cm-3 vs. 1 × 1016 cm-3) for the same TMAA1 and AsH3 mole fractions. High-purity AlGaAs was achieved with TMAAl and TEGa at higher AsH3 flow rates.

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

P-type InxGa1−xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-1019 cm−3 and device quality surface morphology

2021 ◽  
Vol 119 (12) ◽  
pp. 122101
Author(s):  
Evyn L. Routh ◽  
Mostafa Abdelhamid ◽  
Peter Colter ◽  
N. A. El-Masry ◽  
S. M. Bedair
Keyword(s):  
Surface Morphology ◽  
Room Temperature ◽  
Hole Concentration ◽  
P Type ◽  
Quality Surface

Degradation in a Methyl-phenyl Co-Polymeric Polysilane for LED Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Light Source ◽  
Room Temperature ◽  
Light Exposure ◽  
Room Temperature Photoluminescence ◽  
Pl Spectrum ◽  
Pl Intensity ◽  
Methyl Phenyl

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.

Anomalous Room-Temperature Photoluminescence from Nanostrained MoSe2 Monolayers

ACS Photonics ◽  
2021 ◽  
Author(s):  
Tomojit Chowdhury ◽  
Kiyoung Jo ◽  
Surendra B. Anantharaman ◽  
Todd H. Brintlinger ◽  
Deep Jariwala ◽  
...  
Keyword(s):  
Room Temperature ◽  
Room Temperature Photoluminescence

Influence of Momentary Annealing on the Nanoscale Surface Morphology of Room Temperature Pulsed Laser Deposited NiO(111) Epitaxial Thin Films on Atomically Stepped Sapphire (0001) Substrates

2013 ◽  
Vol 1507 ◽  
Author(s):  
Ryosuke Yamauchi ◽  
Geng Tan ◽  
Daishi Shiojiri ◽  
Nobuo Tsuchimine ◽  
Koji Koyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Film Surface ◽  
Transient State ◽  
Epitaxial Thin Films ◽  
Flat Surfaces ◽  
Surface Nanostructure ◽  
Atomically Flat

ABSTRACTWe examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.

The Study on Microstructural and Optical Properties of Nanocrystalline Germanium Films

2010 ◽  
Vol 663-665 ◽  
pp. 324-327
Author(s):  
Chao Song ◽  
Rui Huang
Keyword(s):  
Multilayer Structure ◽  
Room Temperature ◽  
Multilayer Film ◽  
Volume Fraction ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force ◽  
Lower Volume Fraction ◽  
Lower Volume

The germanium film and Ge/Si multilayer structure were fabricated by magnetron sputtering technique on silicon substrate at temperatures of 500°C. Raman scattering spectroscopy measurements reveal that the nanocrystalline Ge occurs in both kinds of samples. Furthermore, from the atomic force microscopy (AFM) results, it is found that the grain size as well as spatially ordering distribution of the nc-Ge can be modulated by the Ge/Si multilayer structure. The room temperature photoluminescence was also observed in the samples. However, compared with that from the nc-Ge film, the intensity of PL from the nc-Ge/a-Si multilayer film becomes weaker, which is attributed to its lower volume fraction of crystallized component.

scholarly journals Enhanced Room‐Temperature Photoluminescence Quantum Yield in Morphology Controlled J‐Aggregates

2021 ◽  
pp. 1903080
Author(s):  
Surendra B. Anantharaman ◽  
Joachim Kohlbrecher ◽  
Gabriele Rainò ◽  
Sergii Yakunin ◽  
Thilo Stöferle ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Photoluminescence Quantum Yield ◽  
J Aggregates
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