The Deposition of Aluminum and Aluminum Boride Thin Films by Aluminaborane Cluster Compounds

1990 ◽  
Vol 204 ◽  
Author(s):  
John A. Glass ◽  
Shreyas Kher ◽  
Stephen D. Hersee ◽  
G. Ramseyer ◽  
James T. Spencer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cluster Compounds ◽  
Semiconductor Materials ◽  
Aluminum Boride ◽  
Borane Cluster ◽  
Active Investigation ◽  
Deposition Conditions

ABSTRACTThe preparation of aluminum-containing thin film materials by MOCVD and MOMBE for use in III-V semiconductor materials, such as HEMT devices, is currently under active investigation. The preparation of uniform, conformal aluminum and boron containing thin film materials from the chemical vapor deposition (CVD) of aluminum borane cluster precursor compounds has been studied. A variety of substrates, deposition conditions and aluminaborane precursors have been explored and their effect on film composition, growth rate and thin film morphology has been investigated. The thermal depositions of aluminum and boron-containing thin films from aluminum borohydride, AI(BH4)3, on copper, SiO2 and GaAs are reported. Boron incorporation in the films vary depending on substrate temperature, aluminaborane flow and the presence or absence of a H2 carrier. These films have been characterized by SEM, AES and XES.

The Chemical Vapor Deposoitin of Pure Nickel and Nickel Boride Thin Films from Borane Cluster Compounds

1991 ◽  
Vol 250 ◽  
Author(s):  
Shreyas Kher ◽  
James T. Spencer
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Chemical Vapor ◽  
Nickel Chloride ◽  
Reaction Chamber ◽  
Cluster Compounds ◽  
Nickel Boride ◽  
Metal Metal ◽  
Unique Source ◽  
Borane Cluster

AbstractSeveral borane cluster compounds, such as pentaborane(9) and their corresponding metal complexes have been investigated in our laboratory for their utility as unique source materials for synthesizing metal/metal boride thin films by MOCVD. In this paper we report the preparation of thin films of nickel boride from the thermal decomposition of nido- pentaborane( 9) in the presence of anhydrous nickel chloride [NiCl2] in the vapor phase. Crystalline nickel boride thin films of controlled composition ranging from 0.1 to several microns have been readily prepared by controlling the temperature and the flow rate of the pentaborane(9) into the reaction chamber. The nickel boride films on GaAs were thermally annealed to form the Ni7B3 phase as hexagonal crystals in a Ni3B matrix. These films have been characterized by AA, AES, EDXA, SEM, XRD and electron diffraction. The phases were determined primarily by X-ray and electron diffraction experiments.

Nucleation And Growth of Yttria-Stabilized Zirconia Thin Films Using Combustion Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Sergey Yarmolenko ◽  
Qiuming Wei
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Nucleation Rate ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Total Metal ◽  
Vapor Deposition Technique

ABSTRACTLiquid fuel combustion chemical vapor deposition technique was successfully used for YSZ thin film processing. The nucleation rates were obtained for the samples processed at different temperatures and total-metal-concentrations in the liquid fuel. An optimum substrate temperature was found for the highest nucleation rate. The nucleation rate was increased with the total-metal-concentration. Structural evolution of the thin film in the early processing stage was studied with regard to the formation of nuclei, crystallites and final crystals on the films. The films were found to be affected by high temperature annealing. The crystals and the thin films were characterized with scanning electron microscopy.

Taper Angle of Silicon Nitride Thin Film Control by Laser Direct Pattern for Transistors Fabrication

2013 ◽  
Vol 284-287 ◽  
pp. 225-229 ◽  
Author(s):  
Chao Nan Chen ◽  
Jung Jie Huang ◽  
Gwo Mei Wu ◽  
How Wen Chien
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Nitride ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Taper Angle ◽  
Shot Number

Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.

Preparation of Epitaxial LiNbO3 Thin Film by MOCVD and its Properties

2008 ◽  
Vol 388 ◽  
pp. 179-182 ◽  
Author(s):  
Rintarou Morohashi ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Tomohiko Yoshioka ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Lithium niobate (LiNbO3) thin films were deposited on Al2O3(001) substrates using metal-organic chemical vapor deposition (MOCVD), with Li(dpm) and Nb(C2H5)5 as precursors. By optimizing the conditions of thin film deposition, the c-axis oriented and epitaxially grown LiNbO3 thin films with stoichiometric composition were deposited on an Al2O3(001) substrate. The refractive index of the stoichiometric LiNbO3 thin film was 2.24 at = 632.8 nm, which is close to that of bulk crystal.

scholarly journals Tin guanidinato complexes: oxidative control of Sn, SnS, SnSe and SnTe thin film deposition

2018 ◽  
Vol 47 (14) ◽  
pp. 5031-5048 ◽  
Author(s):  
Ibrahim Y. Ahmet ◽  
Michael S. Hill ◽  
Paul R. Raithby ◽  
Andrew L. Johnson
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Semiconductor Materials ◽  
Phase Pure ◽  
Chalcogenide Thin Films ◽  
First Time ◽  
Pure Sn

SnS, SnSe and SnTe are potentially important semiconductor materials. We report for the first time the oxidative controlled Aerosol assisted chemical vapor deposition (AA-CVD) of phase pure Sn(ii) chalcogenide thin films, using chalcogenide Sn(iv) guanidinate precursors, containing SnCh bonds (Ch = S, Se and Te).

Nanostructural and Optical Features of nc-Si:H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques

2006 ◽  
Vol 510-511 ◽  
pp. 962-965
Author(s):  
Jae Hyun Shim ◽  
Nam Hee Cho ◽  
Y.J. Kim ◽  
Chin Myung Whang ◽  
Won Seung Cho ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Amorphous Matrix ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Nanocrystallites ◽  
Deposition Conditions

The nanostructural and optical features of hydrogenated nanocrystalline silicon (nc-Si:H) thin films, which were prepared by plasma enhanced chemical vapor deposition (PECVD), were investigated as a function of deposition conditions. It was found that the crystallite size varied with the relative fraction of Si-H3 bonds in the films, [ ] eger n n n H Si H Si int 3 1 3 / ] [ = = ∑ − − , which was sensitively related with the flow rate of SiH4 reaction gas. The silicon nanocrystallites in the films enlarged from ~2.0 to ~8.0 nm in their size with increasing gas flow rate, while the PL emission energy varied from 2.5 to 1.8 eV; the relative fractions of the Si-H3, Si-H2, and Si-H bonds in the amorphous matrix were also varied sensitively with the SiH4 flow rate. A model for the nanostructure of the nc-Si:H films was suggested to discribe the variations in the size and chemical bonds of the nanocrystallites as well as the amorphous matrix depending on the deposition conditions.

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