Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon

1990 ◽  
Vol 209 ◽  
Author(s):  
R. Rizk ◽  
P. De Mierry ◽  
D. Ballutaud ◽  
M. Aucouturier ◽  
D. Mathiot
Keyword(s):  
Hydrogen Diffusion ◽  
New Approach ◽  
Kinetic And Thermodynamic Parameters ◽  
Dissociation Energies ◽  
Molecule Formation ◽  
Type Silicon ◽  
P Type ◽  
Phosphorus Doped ◽  
Diffusion Profiles

ABSTRACTDeuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm−3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model. The new approach which excludes the H2 molecule formation, as applied recently to ptype silicon, allows the determination of kinetic and thermodynamic parameters such as diffusion coefficients, activation and dissociation energies. These parameters 6re compared with those found for p-type silicon and discussed in the light ofavailable data for n-type material.

Hydrogen in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
J. W. Corbett ◽  
J. L. Lindström ◽  
S. J. Pearton
Keyword(s):  
Hydrogen Diffusion ◽  
Hydrogen Passivation ◽  
Floating Zone ◽  
Dangling Bonds ◽  
Low Resistivity ◽  
Shallow Donors ◽  
Type Silicon ◽  
Shallow Acceptors ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTWe summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type Si. Also mentioned are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors, and hyper-deep defects.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Effects in Silicon Explained by Atomic Hydrogen

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Schnegg ◽  
H. Prigge ◽  
M. Grundner ◽  
P. O. Hahn ◽  
H. Jacob
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Diffusion ◽  
Silicon Layer ◽  
Deuterium Content ◽  
Slight Reduction ◽  
Oh Groups ◽  
Acceptor Concentration ◽  
Type Silicon ◽  
Crystal Imperfections ◽  
P Type

ABSTRACTThe chemomechanical polishing mechanism is described as a corrosive attack of water forming Si-H and Si-OH groups. By adding ammonia or amines to the slurry we observe an irlfease of the resistivity corresponding to a neutralization of up to 1 × 1017 acceptor atoms cm−3 in the case of p-type silicon, whereas n-type silicon can show a slight reduction in resistivity due to the neutralization of the residual acceptor concentration.SIMS measurements show the presence of hydrogen in the bulk. Using deuterium instead of hydrogen, a correlation could be established between the deuterium content of the wafer, measured by the effusion technique, and the degree of the acceptor compensation.As can be shown by resistivity and C/V-measurements, under the conditions of polishing the supposed inactivator hydrogen migrates to a distance finally corresponding to the thickness of a wafer. This is contrary to the comm on method of plasma treatment, where a damaged silicon layer is supposed to act as a barrier to the hydrogen diffusion. Differences in the IR spectra can be explained this way.Crystal imperfections in the bulk and on the surface influences the migration of hydrogen essentially.

Dissociation Kinetics of Shallow-Acceptor-Hydrogen Pairs in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
T. Zundel ◽  
J. Weber
Keyword(s):  
Schottky Diode ◽  
Reverse Bias ◽  
Temperature Dependent ◽  
Dissociation Kinetics ◽  
Shallow Acceptor ◽  
Dissociation Energies ◽  
Type Silicon ◽  
P Type ◽  
Kinetics Of

AbstractAnnealing of hydrogenated p-type silicon with a reverse bias applied to a Schottky diode allows us to precisely determine the dissociation frequency vA of shallow acceptor-hydrogen pairs (AH with A = B, Al, Ga, and In). The temperature dependent values of vA satisfy the relation vA = voAexp (-EA/kT), with voB = 2.8 . 1014 s-1, voAl = 3.1 . 1013 s-1, VoGa = 6.9 . 1013 s-1, and voIn = 8.4 · 1013 s-1. The dissociation energies EA depend only weakly on the acceptors: EB = (1.28±0.03)eV, EAl = (1.44±0.02) eV, EGa = (1.40±0.03) eV, and EIn = (1.42±0.05) eV. The dissociation frequency of BH pairs shifts to a lower value when H is replaced by the deuterium isotope.

scholarly journals Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

AIP Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 015112 ◽  
Author(s):  
Alessandro Inglese ◽  
Hannu S. Laine ◽  
Ville Vähänissi ◽  
Hele Savin
Keyword(s):  
Type Silicon ◽  
P Type ◽  
Phosphorus Doped

Dependence of Hydrogen Diffusion on the Electric Field in p-Type Silicon

2004 ◽  
Vol 151 (9) ◽  
pp. G564 ◽  
Author(s):  
Y. L. Huang ◽  
B. Wdowiak ◽  
R. Job ◽  
Y. Ma ◽  
W. R. Fahrner
Keyword(s):  
Electric Field ◽  
Hydrogen Diffusion ◽  
Type Silicon ◽  
P Type

Application of Phosphorus‐Doped Polysilicon‐Based Full‐Area Passivating Contact on the Front Textured Surface of p ‐Type Silicon

2020 ◽  
pp. 2000455
Author(s):  
Don Ding ◽  
Yufeng Zhuang ◽  
Yanfeng Cui ◽  
Yueheng Zhang ◽  
Zhengping Li ◽  
...  
Keyword(s):  
Textured Surface ◽  
Type Silicon ◽  
P Type ◽  
Phosphorus Doped

Arsenic Redistribution and Outdiffusion in Implanted Czochralski-Grown P-Type Silicon During Rapid Thermal Annealing

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Chaussemy ◽  
B. Canut ◽  
S. N. Kumar ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Coefficients ◽  
Good Description ◽  
Temperature Dependent ◽  
One Dimensional ◽  
Type Silicon ◽  
The One ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTThe effects of the implantation parameters (dose and energy) on the Arsenic redistribution and outdiffusion rate in (100) p-type silicon, after 7–12 s Rapid Thermal Annealing in the 1100–1200°C temperature range have been investigated. Four doses ranging from 2×1014 to l×1016 cm−2, and As+ energies between 70 and 170 keV, have been studied. The experimental diffusion profiles obtained from the SIMS measurements, in complement with the RBS results, were modelled using the one dimensional Fick's equation with semi-infinite boundary conditions, using a concentration and temperature dependent diffusion coefficient D(C, T). The As diffusivity was classically attributed to As+V0, As+V−, and As+V − pairs with the related diffusion coefficients taken from the literature. A relatively good description of the As redistribution was obtained without introducing any transient or SPE effects.

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