Arsenic Redistribution and Outdiffusion in Implanted Czochralski-Grown P-Type Silicon During Rapid Thermal Annealing

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Chaussemy ◽  
B. Canut ◽  
S. N. Kumar ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Coefficients ◽  
Good Description ◽  
Temperature Dependent ◽  
One Dimensional ◽  
Type Silicon ◽  
The One ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTThe effects of the implantation parameters (dose and energy) on the Arsenic redistribution and outdiffusion rate in (100) p-type silicon, after 7–12 s Rapid Thermal Annealing in the 1100–1200°C temperature range have been investigated. Four doses ranging from 2×1014 to l×1016 cm−2, and As+ energies between 70 and 170 keV, have been studied. The experimental diffusion profiles obtained from the SIMS measurements, in complement with the RBS results, were modelled using the one dimensional Fick's equation with semi-infinite boundary conditions, using a concentration and temperature dependent diffusion coefficient D(C, T). The As diffusivity was classically attributed to As+V0, As+V−, and As+V − pairs with the related diffusion coefficients taken from the literature. A relatively good description of the As redistribution was obtained without introducing any transient or SPE effects.

Outdiffusion modelling of arsenic from As+ implanted crystalline p-type silicon during rapid thermal annealing

1989 ◽  
Vol 36 (1-4) ◽  
pp. 545-553 ◽  
Author(s):  
S.N. Kumar ◽  
G. Chaussemy ◽  
B. Cauut ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Type Silicon ◽  
P Type

Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects

1999 ◽  
Vol 568 ◽  
Author(s):  
Aditya Agarwal ◽  
Hans-J. Gossmann ◽  
Anthony T. Fiory
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Driving Forces ◽  
Recent Experimental Data ◽  
Enhanced Diffusion ◽  
Temperature Ramp ◽  
Rate Effects ◽  
Low Energies ◽  
Ultra Shallow Junctions ◽  
P Type

ABSTRACTOver the last couple of years rapid thermal annealing (RTA) equipment suppliers have been aggressively developing lamp-based furnaces capable of achieving ramp-up rates on the order of hundreds of degrees per second. One of the driving forces for adopting such a strategy was the experimental demonstration of 30nm p-type junctions by employing a ramp-up rate of ≈400°C/s. It was subsequently proposed that the ultra-fast temperature ramp-up was suppressing transient enhanced diffusion (TED) of boron which results from the interaction of the implantation damage with the dopant. The capability to achieve very high temperature ramp-rates was thus embraced as an essential requirement of the next generation of RTA equipment.In this paper, recent experimental data examining the effect of the ramp-up rate during spike-and soak-anneals on enhanced diffusion and shallow junction formation is reviewed. The advantage of increasing the ramp-up rate is found to be largest for the shallowest, 0.5-keV, B implants. At such ultra-low energies (ULE) the advantage arises from a reduction of the total thermal budget. Simulations reveal that a point of diminishing return is quickly reached when increasing the ramp-up rate since the ramp-down rate is in practice limited. At energies where TED dominates, a high ramp-up rate is only effective in minimizing diffusion if the implanted dose is sufficiently small so that the TED can be run out during the ramp-up portion of the anneal; for larger doses, a high ramp-up rate only serves to postpone the TED to the ramp-down duration of the anneal. However, even when TED is minimized at higher implant energies via high ramp-up rates, the advantage is unobservable due to the rather large as-implanted depth. It appears then that while spike anneals allow the activation of ULE-implanted dopants to be maximized while minimizing their diffusion the limitation imposed by the ramp-down rate compromises the advantage of very aggressive ramp-up rates.

Hydrogen in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
J. W. Corbett ◽  
J. L. Lindström ◽  
S. J. Pearton
Keyword(s):  
Hydrogen Diffusion ◽  
Hydrogen Passivation ◽  
Floating Zone ◽  
Dangling Bonds ◽  
Low Resistivity ◽  
Shallow Donors ◽  
Type Silicon ◽  
Shallow Acceptors ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTWe summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type Si. Also mentioned are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors, and hyper-deep defects.

Rapid thermal annealing induced the c-axis (00 l) preferred orientation and the p-type thermoelectric properties of Bi-Sb-Te thin films

2020 ◽  
Vol 706 ◽  
pp. 138094 ◽  
Author(s):  
Athorn Vora–ud ◽  
Somporn Thaowonkaew ◽  
Jessada Khajonrit ◽  
Kunchit Singsoog ◽  
Pennapa Muthitamongkol ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Rapid Thermal Annealing ◽  
Preferred Orientation ◽  
P Type

DLTS Characterization of N-Type Silicon After Rapid Thermal Annealing of Boron Implantation

1985 ◽  
Vol 52 ◽  
Author(s):  
C. M. Ransom ◽  
T. O. Sedgwick ◽  
S. A. Cohen
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diode ◽  
Electron Traps ◽  
Majority Carrier ◽  
Type Silicon ◽  
Isochronal Anneal ◽  
Boron Implantation ◽  
Carrier Traps

ABSTRACTDLTS measurements show that majority-carrier traps exist after quartz-lamp, rapid-thermal annealing (RTA) activation of B+ and BF2+ ion implants in n-type silicon. Levels at Ec-0.17, 0.27, 0.44 and 0.57 eV annealed out with an additional 20 minute isochronal anneal at 550°C in argon. A stable defect at 0.37 eV existed at temperatures above 750°C. DLTS measurements of a Schottky diode on n-type silicon after only RTA indicated that electron traps could be introduced into n-type silicon by the RTA alone.

Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky Structure

2015 ◽  
Vol 11 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
D. Sri Silpa ◽  
V. Janardhanam ◽  
Hyung-Joong Yun ◽  
Chel-Jong Choi
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Morphological Properties ◽  
Annealing Effects ◽  
P Type ◽  
Schottky Structure

Modeling of Delayed Hydride Crack Initiation

1991 ◽  
Vol 113 (4) ◽  
pp. 443-448 ◽  
Author(s):  
A. F. Shalabi ◽  
D. A. Meneley
Keyword(s):  
Crack Initiation ◽  
Plastic Zone ◽  
Stress Level ◽  
Diffusion Problem ◽  
Transient Condition ◽  
Temperature Dependent ◽  
Mathematical Solution ◽  
One Dimensional ◽  
Percent Niobium ◽  
The One

This paper presents a solution to the one-dimensional time (transient condition) and temperature dependent diffusion problem adjacent to a crack-tip/flaw within the plastic zone region. The solution is used in addressing the problem of delayed hydride crack initiation in zirconium-2.5 wt. percent niobium. The mathematical solution predicts the critical hydride length at a given stress level and temperature for crack initiation.

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