Heteroepitaxial Diamond Formed on Silicon Wafer Observed by High Resolution Electron Microscopy

1994 ◽  
Vol 357 ◽  
Author(s):  
Jie Yang ◽  
Zhangda Lin ◽  
Li-Xin Wang ◽  
Sing Jin ◽  
Ze Zhang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Diamond Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Hot Filament

AbstractDiamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HFCVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterizate the structure and morphology of the synthesised diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographes show that plane diamond crystals have been obtained.

High Resolution Transmission Electron Microscopy Investigation of the Defect Structure in CdMnTe Layers Grown on GaAs by MOCVD

1987 ◽  
Vol 102 ◽  
Author(s):  
J. H. Mazur ◽  
P. Grodzinski ◽  
A. Nouhi ◽  
R. J. Stirn
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Organic Chemical ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Resolution Electron

ABSTRACTElectron diffraction and high resolution electron microscopy were used for analysis of Cd1−xMnxTe films grown on (100)2°[011] GaAs substrates by metal organic chemical vapor deposition (MOCVD) at 420°C (x=O.3) and 450°C (x=0.5). It has been found that these two conditions produce dramatically different microstructures. Two orientation relationships of the epilayers with respect to the substrate were observed. It is suggested that this phenomenon may be related to GaAs substrate surface morphology.

High Resolution Transmission Electron Microscopy of an automobile catalytic converter

1990 ◽  
Vol 48 (4) ◽  
pp. 242-243
Author(s):  
Jan-Olle Malm ◽  
Jan-Olov Bovin
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Catalytic Converter ◽  
Active Material ◽  
Image Intensifier ◽  
High Resolution Electron Microscopy ◽  
Detailed Knowledge ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Atomic Surface

Understanding of catalytic processes requires detailed knowledge of the catalyst. As heterogeneous catalysis is a surface phenomena the understanding of the atomic surface structure of both the active material and the support material is of utmost importance. This work is a high resolution electron microscopy (HREM) study of different phases found in a used automobile catalytic converter.The high resolution micrographs were obtained with a JEM-4000EX working with a structural resolution better than 0.17 nm and equipped with a Gatan 622 TV-camera with an image intensifier. Some work (e.g. EDS-analysis and diffraction) was done with a JEM-2000FX equipped with a Link AN10000 EDX spectrometer. The catalytic converter in this study has been used under normal driving conditions for several years and has also been poisoned by using leaded fuel. To prepare the sample, parts of the monolith were crushed, dispersed in methanol and a drop of the dispersion was placed on the holey carbon grid.

Structure of InAs Quantum Dots in Si Matrix Investigated by High Resolution Electron Microscopy

1999 ◽  
Vol 571 ◽  
Author(s):  
N. D. Zakharov ◽  
P. Werner ◽  
V. M. Ustinov ◽  
A.R. Kovsh ◽  
G. E. Cirlin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Critical Thickness ◽  
High Resolution Electron Microscopy ◽  
Geometrical Parameters ◽  
Inas Quantum Dots ◽  
Temperature Growth ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTQuantum dot structures containing 2 and 7 layers of small coherent InAs clusters embedded into a Si single crystal matrix were grown by MBE. The structure of these clusters was investigated by high resolution transmission electron microscopy. The crystallographic quality of the structure severely depends on the substrate temperature, growth sequence, and the geometrical parameters of the sample. The investigation demonstrates that Si can incorporate a limited volume of InAs in a form of small coherent clusters about 3 nm in diameter. If the deposited InAs layer exceeds a critical thickness, large dislocated InAs precipitates are formed during Si overgrowth accumulating the excess of InAs.

Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

1980 ◽  
Vol 2 ◽  
Author(s):  
Fernando A. Ponce
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Limit ◽  
High Concentration ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTThe structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

1999 ◽  
Vol 588 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Excitonic Emission

AbstractThe band-A emission (around 2.8 eV) observed in high quality (device-grade) homoepitaxial diamond films grown by microwave-plasma chemical vapor deposition (CVD) was studied by means of scanning cathodoluminescence spectroscopy and high-resolution transmission electron microscopy. Recent progress in our study on homoepitaxial diamond films was obtained through the low CH4/H2 conditions by CVD. These showed atomically flat surfaces and the excitonic emission at room temperature, while the band-A emission (2.95 eV) decreased. Using these samples, we found that the band-A emission only appeared at unepitaxial crystallites (UC) sites, while other flat surface parts still showed the excitonic emission. High-resolution transmission electron microscopy revealed that there were grain boundaries which contained π-bonds in UC. This indicates that one of the origin of the band-A emission in diamond films is attributed to π bonds of grain boundaries.

Interfacial Atomic Structures During Cobalt Silicidation

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Catana ◽  
P.E. Schmid
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Cross Sectional ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Predominant Orientation ◽  
Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

High Resolution Electron Microscopy Observations About The Interface Structure In A Ti/TiN Multilayer Material

1991 ◽  
Vol 238 ◽  
Author(s):  
X. G. Ning ◽  
L. P. Guo ◽  
R. F. Huang ◽  
J. Gong ◽  
B. H. Yu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Orientation Relationship ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Multilayer Material ◽  
Transition Layers ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Specific Orientation

ABSTRACTThe interface structure in a Ti/TiN multilayer material has been investigated by high resolution transmission electron microscopy (HRTEM). It was shown that the α-Ti and β-TiN layers consisted of many cylindrical crystals growing along the close packed directions normal to the surface of a stainless steel. There existed specific orientation relationship at the Ti/TiN interfaces without transition layers: (111)TiN ‖ (001)Ti, [110]TiN ‖ [100]Ti. However there was no such orientation relationship at the Ti/TiN interfaces with TixN (x >1) transition layers.

Combined Use of Small Angle Neutron Scattering (Sans) and (Conventional and High Resolution) Electron Microscopy for the Characterization of Early Stages of Ordering and Phase Separation in Ni-Ti

1986 ◽  
Vol 82 ◽  
Author(s):  
A. Cerri ◽  
R. Schmelczer ◽  
P. Schwander ◽  
G. Kostorz ◽  
A.F. Wright
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Tem Analysis ◽  
Zone Formation ◽  
Early Stages ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Combined Use ◽  
Integrated Intensity

ABSTRACTThe decomposition of Ni ∼ 11.5 at.% Ti single crystals was studied for an ageing temperature of 540°C. In this alloy, coherent ordered zones of γ′-Ni3Ti (Cu3Au structure) are formed prior to the stable n precipitates. The early stages of zone formation were investigated by in-beam SANS and transmission electron microscopy (TEM). Electron diffraction, high resolution electron microscopy, TEM analysis of dislocation arrangements in samples deformed after ageing and X-ray measurements of the integrated intensity at L12 superstructure positions show that ordered regions already appear in quenched samples, whereas compositional changes, as determined by SANS measurements, occur only upon ageing.

High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

1999 ◽  
Vol 14 (7) ◽  
pp. 2732-2738 ◽  
Author(s):  
Ch. Grigis ◽  
S. Schamm ◽  
D. Dorignac
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Image Matching ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Chemical Vapor Deposited ◽  
Structural Imperfections ◽  
Metalorganic Chemical

New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO “1:2:3” stacking sequences along the c direction, which give rise to structural variants with locally “2:5:7,” “3:4:7,” or “4:6:10” cationic stoichiometries. The defects can be consistently interpreted as CuO–YO–CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

High Resolution Transmission Electron Microscopy of Partial States of Oxygen Order in YBa2Cu3Oz

1990 ◽  
Vol 183 ◽  
Author(s):  
C. P. Burmester ◽  
S. Quong ◽  
L. T. Wille ◽  
R. Gronsky ◽  
B. T. Ahn ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Contrast Effects ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Out Of Plane ◽  
Partial States

AbstractHigh resolution electron microscopy is used to investigate the effect of electron irradiation induced oxygen loss on the states of partial order in YBa2Cu3Oz. Contrast effects visible in the [001] zone image as a result of the degree of the out-of-plane correlation of these ordered states are investigated. Using statistical simulations to aid in the analysis of the HREM images, an interpretation based on a kinetically limited evolution of the variation of long range [001] ordering is proposed.

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