ECR Plasma Etching Technology for ULSIs

1991 ◽  
Vol 223 ◽  
Author(s):  
Seiji Samukawa
Keyword(s):  
Plasma Etching ◽  
High Selectivity ◽  
Electron Cyclotron Resonance ◽  
Etching Rate ◽  
High Rate ◽  
Ion Energy ◽  
Ecr Plasma ◽  
High Etching Rate ◽  
Phosphorus Doped ◽  
Ecr Plasma Etching

ABSTRACTA new electron cyclotron resonance (ECR) plasma etching technology has been developed to realize simultaneously high selectivity, high rate and anisotropic etching for phosphorus doped poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located around the ECR position (875 gauss position) in an ECR plasma. As a result of ECR position etching, under the low pressure of 5 × 10−4 Torr, a high etching rate and an infinite selectivity to SiO2 etching are realized by using C12/O2 and Cl2/O2/SF6 etching gas.

Dry Etching of InGaP and AlInP in CH4/H2/Ar

1996 ◽  
Vol 421 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
C. J. Santana ◽  
E. S. Lambers ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Low Flow ◽  
Flow Rates ◽  
Ecr Plasma ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Rates ◽  
Ecr Plasma Etching

AbstractElectron Cyclotron Resonance (ECR) plasma etching with additional if-biasing produces etch rates ≥ 2,500Å/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N2 addition to CH4/H2/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AtlnP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to ˜200Å from the surface relative to the RIE samples.

CH4 :H2 :Ar rf/ECR Plasma Etching of GaAs and InP

1991 ◽  
Vol 223 ◽  
Author(s):  
Victor. J. Law ◽  
S. G. Ingram ◽  
G. A. C. Jones ◽  
R. C. Grimwood ◽  
H. Royal
Keyword(s):  
Plasma Etching ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Kinetic Studies ◽  
High Electron Mobility Transistor ◽  
Rf Plasma ◽  
High Electron ◽  
Ecr Plasma ◽  
Etch Rates ◽  
Ecr Plasma Etching

ABSTRACTA comparative study of CH4 :H2 , and CH4 :H2 :Ar rf-plasma and microwave electron cyclotron resonance (ECR) plasma etching of GaAs and InP is presented. The study is in two parts;(i) Kinetic studies of GaAs and InP etch rates as a function of the constituent gas flow rates, applied rf and microwave powers, substrate temperature and position. The results indicate that CH4 :H2 :Ar ECR etching of GaAs is 10× more efficient in the utilisation of the CH4 precursor gas than rf-plasmas. However, the absolute etch rates are lower (70 nm min−1 for rf and 25 nm min−1 for rf biassed ECR-plasmas).The effect of etching conditions on InP morphology is also examined.(ii) The study of electrical “damage” in GaAs/AlGaAs high electron mobility transistor (HEMT) Hall bar structures, was investigated by ECR-plasma etching off the top GaAs capping layer. Results indicate that ECR-plasma etching with an rf-bias between 0V and −30V does not significantly effect the electrical characteristics of such devices at 300K, with some degredation at 1.2 K.

ECR Plasma Etching with Heavy Halogen Ions

1990 ◽  
Vol 29 (Part 1, No. 10) ◽  
pp. 2223-2228 ◽  
Author(s):  
Nobuo Fujiwara ◽  
Hisaharu Sawai ◽  
Masahiro Yoneda ◽  
Kyusaku Nishioka ◽  
Haruhiko Abe
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Ecr Plasma Etching

Anisotropic ECR Plasma Etching with Low-Energy Ions

1993 ◽  
Vol 140-142 ◽  
pp. 39-54
Author(s):  
Y. Tobinaga ◽  
T. Miyano ◽  
K. Fujimoto ◽  
M. Fujito ◽  
H. Fujiwara
Keyword(s):  
Plasma Etching ◽  
Low Energy ◽  
Ecr Plasma ◽  
Low Energy Ions ◽  
Ecr Plasma Etching

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

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