tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering

2014 ◽  
Vol 1588 ◽  
Author(s):  
Nithi Atthi ◽  
Dae-Hee Han ◽  
Shun-ichiro Ohmi
Keyword(s):  
Cyclotron Resonance ◽  
Interfacial Layer ◽  
Electron Cyclotron Resonance ◽  
Interface Layer ◽  
Orientation Dependence ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering ◽  
Density Of Interface States

ABSTRACTThis paper investigated the silicon substrate orientation dependence on the electrical properties of high-κ HfN gate insulator formed by electron-cyclotron-resonance (ECR) plasma sputtering. The effect of N2/4.9%H2 forming-gas annealing (FGA) was studied. By using N2/4.9%H2 FGA at 500°C for 20 min, the interfacial layer (IL) formation was not formed and led to the zero-interface layer (ZIL). The EOTs of 0.47 and 0.51 nm with leakage current of 1.1 and 1.4 A/cm2 (@VFB -1 V) were obtained on p-Si(100) and p-Si(110), respectively. The density of interface states (Dit) with the order of 1011 cm-2eV-1 was obtained on both p-Si(100) and p-Si(110). This suggests that the direct deposition of HfN film with ZIL prevented the degradation of electrical characteristics on the p-Si(100) and p-Si(110) substrate in comparison to the case of oxide-based hafnium gate insulator.

ECR Plasma Deposition of Dielectrics for Optoelectronic Applications

1989 ◽  
Vol 165 ◽  
Author(s):  
Steven Dzioba
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Plasma Source ◽  
Optoelectronic Device ◽  
Dielectric Films ◽  
Film Properties ◽  
Ecr Plasma ◽  
Device Applications ◽  
Inp Substrates

A UHV electron cyclotron resonance (ECR) plasma source has been used to deposit SiNx, SiOxNy and amorphous Si thin films on InP substrates for optoelectronic device applications. High quality dielectric films can be deposited at temperatures significantly lower than conventional techniques, namely less than 110°C. Selected applications pertinent to optoelectronic devices are used to establish the role of ion/electron fluxes in thin film properties.

Preparation And Characterization Of Carbon Nitride Thin Films By Electron Cyclotron Resonance (Ecr) Sputtering Method

1998 ◽  
Vol 555 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Youji Tani ◽  
Masaaki Hisa ◽  
Eiji Kamijo
Keyword(s):  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Cyclotron Resonance ◽  
Carbon Nitride ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
X Ray ◽  
Ecr Plasma ◽  
Plasma Sputtering ◽  
Gas Atmosphere

AbstractCrystalline carbon nitride films were deposited by electron cyclotron resonance (ECR) plasma sputtering method using a carbon target and a nitrogen gas atmosphere. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and X-ray diffraction (XRD). Nitrogen content of the deposited film was varied with substrate selfbias potential and substrate temperature. Bonding states of nitrogen and carbon in the deposited filns were different according to the substrate temperature, sp3 C-N bonds were observed for the film deposited at 600 °C. Crystallization of carbon nitride thin film was observed hen the deposition was carried out an elevated substrate temperature.

Properties of Electro-Optic Bi12SiO20 Thin Films Grown by Electron Cyclotron Resonance Plasma Sputtering

1991 ◽  
Vol 243 ◽  
Author(s):  
Koji Nomura ◽  
Hisahito Ogawa
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Epitaxial Thin Films ◽  
Light Modulator ◽  
Substrate Heating ◽  
Ecr Plasma ◽  
Sapphire Substrates ◽  
Plasma Sputtering ◽  
Electrooptic Effects ◽  
Δ Phase

AbstractBi12SiO20 thin films have been prepared on glass and (0001) sapphire substrates by ECR plasma sputtering with a Bi and Si multitarget system. Polycrystalline thin films of δ-phase Bi12SiO20 have been obtained without any substrate heating. These films can be transformed into γ-phase Bi12SiO20 by heat treatment above 400°C in air and show a large photoconductivity in the range of 380–460 nm. Epitaxial thin films of γ-phase Bi12SiO20 have been obtained on (0001) sapphire substrates at the substrate temperature of 600δ during the sputtering process. Excellent quadratic electrooptic effects for these epitaxial thin films are successfully observed for the first time, and a spatial light modulator using this γ-phase Bi12SiO20 thin film has also been demonstrated. The details of the preparation, structure and some electrical and electrooptic properties of the Bi12SiO20 thin films are described.

Properties of Doped a-Si:H Films Deposited by Ecr Plasma CVD

1990 ◽  
Vol 204 ◽  
Author(s):  
H. Murai ◽  
M. Hayama ◽  
K. Kobayashi ◽  
T. Yamazaki
Keyword(s):  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Dark Conductivity ◽  
Deposition Condition ◽  
Plasma Cvd ◽  
Film Properties ◽  
Plasma Properties ◽  
Hydrogen Incorporation ◽  
Ecr Plasma ◽  
Hydrogenated Amorphous

ABSTRACTPhosphorous doped hydrogenated amorphous silicon films were deposited by microwave electron cyclotron resonance (ECR) plasma CVD at a substrate temperature of 100°C. Electrical, optical and hydrogen-incorporation properties of the films have been investigated. By optimizing the deposition condition, the dark conductivity of 3×10−4S/cm is realized without subsequent annealing. Relations between the film properties and ECR plasma properties have been studied by means of optical emission spectroscopy (OES) and quadrupole mass spectroscopy (QMS).

Preparation Of Bi4Ti3O12 Films by ECR Plasma SpuTtering

1991 ◽  
Vol 223 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Takashi Goto ◽  
Youichirou Masuda ◽  
Akira Baba ◽  
Toshio Hirai
Keyword(s):  
Electron Cyclotron Resonance ◽  
Flat Surface ◽  
Wave Length ◽  
Stoichiometric Composition ◽  
Dielectric Constants ◽  
High Rate ◽  
Rf Power ◽  
Ecr Plasma ◽  
Plasma Sputtering ◽  
Sapphire Single Crystal

ABSTRACTEpitaxially grown films of Bi4Ti3O12 (BIT) were prepared on the substrate of a sapphire single crystal heated at 650°C using a sintered Bi4Ti3O12 target by electron cyclotron resonance (ECR) plasma sputtering. The BIT film of the same composition with the target was obtained under the conditions of microwave power(Mp) higher than 500 W and RF power(Rp) between 300 to 700 W. Increasing Mp or Rp, the deposition rate of the film was increased and the surface of the film became rough. The film exhibiting flat surface, good crystalline orientation and stoichiometric composition was prepared at such the high rate as 3.5 Å/sec under the conditions of Mp=500W and Rp=500W. Dielectric constants(1KHz) of the films deposited on (1120), (1102) and (0001) of sapphire were 93, 121 and 90, respectively, and refractive indexes of each films for the wave length of 632 nm were 2.32, 2.38 and 2.37, respectively.

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