Temperature Uniformity Optimization Using Three-Zone Lamp and Dynamic Control in Rapid Thermal Multiprocessor

1991 ◽  
Vol 224 ◽  
Author(s):  
Pushkar P. Apte ◽  
Samuel Wood ◽  
Len Booth ◽  
Krishna C. Saraswat ◽  
Mehrdad M. Moslehi
Keyword(s):  
Thermal Processing ◽  
Dynamic Control ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Processing Conditions ◽  
Temperature Uniformity ◽  
Throughput Rate ◽  
Precise Control ◽  
Lamp System

AbstractRapid thermal processing (RTP) can play an important role in in situ single-wafer thermal multiprocessing, since it allows for a rapid wafer throughput rate. Conventional dedicated RTP equipment, where temperature uniformity is achieved by optimized reflector and chamber geometries for a specific process, typically cannot provide uniformity for different processes, or for a range of processing conditions. In this work we present a new flexible lamp system, in which tungsten-halogen lamps are configured in three concentric rings that are independently and dynamically controlled. The resultant circularly symmetric flux, which can be varied and controlled both temporally and spatially, offers significantly improved temperature uniformity. This is demonstrated using thermocouples as well as actual processes such as implant annealing, thermal oxidation and chemical vapor deposition of silicon. Through added flexibility and more precise control, this approach offers a powerful tool for multiprocessing and rapid process prototyping.

Multizone Rapid Thermal Processing to Overcome Challenges in Carbon Nanotube Manufacturing by Chemical Vapor Deposition

2019 ◽  
Author(s):  
Jaegeun Lee ◽  
Moataz Abdulhafez ◽  
Mostafa Bedewy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned ◽  
Scalable Production

Abstract For the scalable production of commercial products based on vertically aligned carbon nanotubes (VACNTs), referred to as CNT forests, key manufacturing challenges must be overcome. In this work, we describe some of the main challenges currently facing CNT forest manufacturing, along with how we address these challenges with our custom-built rapid thermal processing chemical vapor deposition (CVD) reactor. First, the complexity of multistep processes and reaction pathways involved in CNT growth by CVD limits the control on CNT population growth dynamics. Importantly, gas-phase decomposition of hydrocarbons, formation of catalyst particles, and catalytic growth of CNTs are typically coupled. Here, we demonstrated a decoupled recipe with independent control of each step. Second, significant run-to-run variations plague CNT growth by CVD. To improve growth consistency, we designed various measures to remove oxygen-containing molecules from the reactor, including air baking between runs, dynamic pumping down cycles, and low-pressure baking before growth. Third, real-time measurements during growth are needed for process monitoring. We implement in situ height kinetics via videography. The combination of approaches presented here has the potential to transform lab-scale CNT synthesis to robust manufacturing processes.

Multizone Rapid Thermal Processing to Overcome Challenges in Carbon Nanotube Manufacturing by Chemical Vapor Deposition

2019 ◽  
Vol 141 (9) ◽  
Author(s):  
Jaegeun Lee ◽  
Moataz Abdulhafez ◽  
Mostafa Bedewy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Catalyst Nanoparticles ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

For the scalable production of commercial products based on vertically aligned carbon nanotubes (VACNTs), referred to as CNT forests, key manufacturing challenges must be overcome. In this work, we describe some of the main challenges currently facing CNT forest manufacturing, along with how we address these challenges with our custom-built rapid thermal processing chemical vapor deposition (CVD) reactor. First, the complexity of the multistep processes and reaction pathways involved in CNT growth by CVD limits the control on CNT population growth dynamics. Importantly, gas-phase decomposition of hydrocarbons, formation of catalyst nanoparticles, and catalytic growth of CNTs are typically coupled. Here, we demonstrated a decoupled recipe with independent control of each step. Second, significant run-to-run variations plague CNT growth by CVD. To improve growth consistency, we designed various measures to remove oxygen-containing molecules from the reactor, including air baking between runs, dynamic pumping down cycles, and low-pressure baking before growth. Third, real-time measurements during growth are needed for process monitoring. We implement in situ height kinetics via videography. The combination of approaches presented here has the potential to transform lab-scale CNT synthesis to robust manufacturing processes.

Application of RTP-CVD Technology to Ulsi Device Fabrication

1991 ◽  
Vol 224 ◽  
Author(s):  
K. H. Jung ◽  
T. Y. Hsieh ◽  
D. L. Kwong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Selective Growth ◽  
Research Areas ◽  
Made In

AbstractRapid thermal processing chemical vapor deposition (RTP-CVD) has received considerable attention as a novel in-situ multi-processing tool capable of meeting the stringent requirements of ULSI device fabrication. In this paper, we review the progress made in developing and applying RTP-CVD to ULSI device fabrication. Research areas discussed include epitaxial Si and poly-Si growth, in-situ doping, selective growth, in-situ multi-processing, and novel dielectrics. In addition, the extension of RTP-CVD to novel materials such as GexSi1−x has produced device quality films with successful application in HBTs and Si-based optoelectronics.

Temperature Control and Temperature Uniformity During Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
Peter Vandenabeele ◽  
Karen Maex
Keyword(s):  
Temperature Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Uniformity ◽  
Chamber Design

AbstractAn overview is given of the major problems in temperature control and uniformity control. For temperature control varying emissivity due to layers, roughness, doping and chamber design are discussed, together with problems due to lamp radiation. The main way to go seems to be in-situ emissivity correction. For uniformity control, the main problems are non-uniform reflector radiation and patteren induced non-uniformity. The solution seems to be the design of a reflective chamber with uniform reflected radiation.

Monte Carlo Thermal Model of an Integrating Light Pipe for Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
J. C. Thomas ◽  
D. P. Dewitt
Keyword(s):  
Monte Carlo ◽  
Thermal Processing ◽  
Monte Carlo Model ◽  
Rapid Thermal Processing ◽  
Width Ratio ◽  
Temperature Uniformity ◽  
System Parameters ◽  
Light Pipe ◽  
End Wall ◽  
Cavity Width

AbstractA Monte Carlo model is developed to simulate transient wafer heating as a function of system parameters in a kaleidoscope- or integrating light-pipe type cavity with square cross-section. Trends in wafer temperature uniformity are examined as a function of length-to-width ratio, cavity width, and the number of heating lamps. The effect on temperature determination by a radiometer placed in the bottom end wall of the cavity is simulated.

Optimization of Process Parameter and Temperature Uniformity On Wafers For Rapid Thermal Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
Andreas Tillmann
Keyword(s):  
Standard Deviation ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Simulation Software ◽  
Process Parameter ◽  
Parameter Distribution ◽  
Temperature Uniformity ◽  
New Strategy ◽  
The Impact

AbstractA new strategy based algorithm to optimize process parameter uniformity (e.g.sheet resistance, oxide thickness) and temperature uniformity on wafers in a commercially available Rapid Thermal Processing (RTP) system with independent lamp control is described. The computational algorithm uses an effective strategy to minimize the standard deviation of the considered parameter distribution. It is based on simulation software which is able to calculate the temperature and resulting parameter distribution on the wafer for a given lamp correction table. A cyclical variation of the correction values of all lamps is done while minimizing the standard deviation of the considered process parameter. After the input of experimentally obtained wafer maps the optimization can be done within a few minutes. This technique is an effective tool for the process engineer to use to quickly optimize the homogeneity of the RTP tool for particular process requirements. The methodology will be shown on the basis of three typical RTP applications (Rapid Thermal Oxidation, Titanium Silicidation and Implant Annealing). The impact of variations of correction values for single lamps on the resulting process uniformity for different applications will be discussed.

Temperature Monitoring by Ripple Pyrometry in Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
Binh Nguyenphu ◽  
Minseok Oh ◽  
Anthony T. Fiory
Keyword(s):  
Temperature Control ◽  
Integrated Circuit ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Back Side ◽  
Integrated Circuit Manufacturing ◽  
Current Trends ◽  
Processing Steps ◽  
Electrical Data

AbstractCurrent trends of silicon integrated circuit manufacturing demand better temperature control in various thermal processing steps. Rapid thermal processing (RTP) has become a key technique because its single wafer process can accommodate the reduced thermal budget requirements arising from shrinking the dimensions of devices and the trend to larger wafers. However, temperature control by conventional infrared pyrometry, which is highly dependent on wafer back side conditions, is insufficiently accurate for upcoming technologies. Lucent Technologies Inc., formerly known as AT&T Microelectronics and AT&T Bell Laboratories, has developed a powerful real-time pyrometry technique using the A/C ripple signal from heating lamps for in-situ temperature measurement. Temperature and electrical data from device wafers have been passively collected by ripple pyrometers in three RTP systems and analyzed. In this paper we report the statistical analysis of ripple temperature and electrical data from device wafers for a typical implant anneal process temperature range of 900 to 1000 °C.

Sign in / Sign up

Export Citation Format

Share Document