Effect of Annealing on the Dielectric Properties and Microstructure of Tantalum Oxide T14in Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Chang Hwan Chun ◽  
Geun Hong Kim ◽  
Kyoung-Soo Yi
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dielectric Properties ◽  
Structural Changes ◽  
Tantalum Oxide ◽  
Oxide Thin Film ◽  
Leakage Reduction ◽  
Si Substrates ◽  
Transmission Electron

AbstractEffects of heat treatments on the dielectric properties of tantalum oxide thin films(250Å) deposited on the p-Si substrates by RF reactive sputtering were investigated. The leakage current density was considerably reduced from 10-9 to 10-12A/μm2 at an electric field of 2MV/cm after rapid thermal annealing in O2 at 1000°C, while little leakage reduction was observed after annealing at 500°C.The structural changes of tantalum oxide thin film after annealing were examined using high resolution transmission electron microscopy. The leakage reduction after annealing can be attributed to crystallization and reoxidation of the amorphous tantalum oxide thin film.

scholarly journals High Resolution Transmission Electron Microscopy and Selected Area Diffraction Study of Doped Zinc Oxide Thin Film

2013 ◽  
Vol 19 (S2) ◽  
pp. 1958-1959
Author(s):  
L. Fang ◽  
P. Ricou ◽  
R. Korotkov
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Zinc Oxide ◽  
High Resolution ◽  
Diffraction Study ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Embedding Procedure for Water Swollen Samples

1970 ◽  
Vol 28 ◽  
pp. 504-505
Author(s):  
Ann M. Thomas ◽  
Virginia Shemeley
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Exchange ◽  
Structural Changes ◽  
Cross Linking ◽  
Ion Exchange Resins ◽  
Transmission Electron ◽  
First Pass ◽  
Exchange Resins

Those samples which swell rapidly when exposed to water are, at best, difficult to section for transmission electron microscopy. Some materials literally burst out of the embedding block with the first pass by the knife, and even the most rapid cutting cycle produces sections of limited value. Many ion exchange resins swell in water; some undergo irreversible structural changes when dried. We developed our embedding procedure to handle this type of sample, but it should be applicable to many materials that present similar sectioning difficulties.The purpose of our embedding procedure is to build up a cross-linking network throughout the sample, while it is in a water swollen state. Our procedure was suggested to us by the work of Rosenberg, where he mentioned the formation of a tridimensional structure by the polymerization of the GMA biproduct, triglycol dimethacrylate.

Transmission Electron Microscopy of oriented Co84Cr14Ta2 thin films for longitudinal magnetic recording

1991 ◽  
Vol 49 ◽  
pp. 756-757
Author(s):  
T. P. Nolan
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Cost ◽  
Low Noise ◽  
Information Storage ◽  
High Coercivity ◽  
Magnetic Alloy ◽  
Magnetic Media ◽  
Transmission Electron

Thin film magnetic media are being used as low cost, high density forms of information storage. The development of this technology requires the study, at the sub-micron level, of morphological, crystallographic, and magnetic properties, throughout the depth of the deposited films. As the microstructure becomes increasingly fine, widi grain sizes approaching 100Å, the unique characterization capabilities of transmission electron microscopy (TEM) have become indispensable to the analysis of such thin film magnetic media.Films were deposited at 225°C, on two NiP plated Al substrates, one polished, and one circumferentially textured with a mean roughness of 55Å. Three layers, a 750Å chromium underlayer, a 600Å layer of magnetic alloy of composition Co84Cr14Ta2, and a 300Å amorphous carbon overcoat were then sputter deposited using a dc magnetron system at a power of 1kW, in a chamber evacuated below 10-6 torr and filled to 12μm Ar pressure. The textured medium is presently used in industry owing to its high coercivity, Hc, and relatively low noise. One important feature is that the coercivity in the circumferential read/write direction is significandy higher than that in the radial direction.

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

Ultrastructures of Epibiotic Suctorian, Tokophrya huangmeiensis 

Zootaxa ◽  
2018 ◽  
Vol 4521 (1) ◽  
pp. 145
Author(s):  
URFA BIN TAHIR ◽  
DENG QIONG ◽  
WANG ZHE ◽  
LI SEN ◽  
LIU YANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Light Microscopy ◽  
Structural Changes ◽  
Small Subunit ◽  
Free Living ◽  
Transmission Electron ◽  
Small Subunit Ribosomal Dna ◽  
Ribosomal Dna Sequence ◽  
Freshwater Ciliates

Tokophrya species are either free-living or facultative ectosymbiotic suctorians associated with copepods, isopods, mysids, decapods and amphipods. Tokophrya huangmeiensis in particular is found to be epizoic with the redclaw crayfish Cherax quadricarinatus Von Martens, 1868, which has been observed as part of an ongoing investigation of freshwater ciliates biodiversity in Huanggang, Hubei, China (Tahir et al. 2017). This first study on T. huangmeiensis based on morphological features using light microscopy and small subunit ribosomal DNA sequence (Tahir et al. 2017), suggested that more detailed descriptions on the physiological and structural changes of this species should be done. Thus, in this study, we looked at the ultrastructures of T. huangmeiensis using electron microscopy, including both scanning (SEM) and transmission electron microscopy (TEM). 

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Microstructure of Thin Film Photoconductors and its Correlation with Optical and Electronic Properthss

1996 ◽  
Vol 452 ◽  
Author(s):  
U. Klement ◽  
D. Horst ◽  
F. Ernst
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Transmission Electron ◽  
Electronic Eye

AbstractThe objective of this work is to find a material to replace amorphous hydrogenated silicon used as photosensitive part in the “retina” of an “electronic eye”. For that reason, ZnS, ZnSe, CdS and CdSe were chosen for investigations. Thin films, prepared by chemical vapour deposition, were characterized by transmission electron microscopy. The observed microstructures were correlated with the optoelectronic properties of these materials. CdSe was found to be the most promising material for our application. Hence, the influence of a dielectric interlayer and the effects of additional annealing treatments were analyzed for CdSe and will be discussed with respect to the optimization of the material.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

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