Chemical Beam Epitaxial Growth of GaAs Epilayer on GaAs (100) Substrate Using Unprecracked Arsine and Trimethylgallium

ABSTRACTWe present preliminary results aimed at investigating the effects of unprecracked arsine and trimethylgallium on the CBE (chemical beam epitaxy) growth of GaAs epilayers. We find that the growth rate rises linearly as the V/III ratio is increased when TMGa and arsine are used. All of the runs produced p-type material mainly due to carbon incorporation with the hole concentration typically of 1017 cm−3. The impurity content of the layers was found to depend distinctly on the pressure of TMGa. The significant drop in hole concentration is due in part to the hydrogen atoms generated from decomposed AsH3 which then aids in the removal of CH3 radicals on the surface. As a result of using unprecracked arsine for growth of the GaAs epilayers, we measure substantial improvements in their electrical and optical properties.

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Carbon Incorporation in Gaas grown by UHVCVD Using Trimethylgallium and Arsine

MRS Proceedings ◽

10.1557/proc-281-37 ◽

1992 ◽

Vol 281 ◽

Cited By ~ 4

Author(s):

Seong-Ju Park ◽

Jeong-Rae Ro ◽

Jae-Ki Sim ◽

El-Hang Lee

Keyword(s):

Growth Rates ◽

Hole Concentration ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

Chemical Beam Epitaxy ◽

Hydrogen Atoms ◽

Carbon Incorporation ◽

Significant Drop ◽

P Type

ABSTRACTWe present results of a study on the effect of unprecracked arsine(AsH3) and trimethylgallium(TMGa) on carbon incorporation in UHVCVD(Ultra High Vacuum Chemical Vapor Deposition) grown GaAs epilayers on GaAs(100). Three distinct temperature-dependent regions of growth rates were identified as growth temperature was increased from 570 to 690°C. The growth rates were also strongly dependent on V/III ratio in a range of 5 to 30, which clearly indicates that the growth rate is determined by the amount of arsenic adsorbed on the surface at low V/III ratio and adsorption of TMGa or decomposition process at high V/III ratio. Hall concentration measurements and low temperature photoluminescence data show that the films are all p-type and their impurity concentrations are reduced by two orders of magnitude compared to those of epilayers grown by CBE(Chemical Beam Epitaxy) which employs TMGa and arsenic(precracked arsines) as source materials. Our results indicate that the hydrogen atoms dissociated from adsorbed arsine may remove hydrocarbon species resulting in a significant drop in hole concentration.

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Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

MRS Proceedings ◽

10.1557/proc-798-y8.2 ◽

2003 ◽

Vol 798 ◽

Cited By ~ 2

Author(s):

D. J. As ◽

D. G. Pacheco-Salazar ◽

S. Potthast ◽

K. Lischka

Keyword(s):

Optical Properties ◽

Hole Concentration ◽

Hole Mobility ◽

Growth Conditions ◽

Rf Plasma ◽

Electrical And Optical Properties ◽

Carbon Doped ◽

Cubic Gan ◽

Hall Effect Measurements ◽

P Type

ABSTRACTP-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

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The Growth Mechanisms of GaSb Epitaxial Film by MOCVD

MRS Proceedings ◽

10.1557/proc-216-265 ◽

1990 ◽

Vol 216 ◽

Author(s):

H. Y. Ueng ◽

S. M. Chen ◽

Y. K. Su ◽

F. S. Juang

Keyword(s):

Growth Rate ◽

Optical Properties ◽

Reaction Mechanism ◽

Substrate Temperature ◽

Epitaxial Film ◽

Hole Concentration ◽

Growth Mechanisms ◽

High Quality ◽

Electrical And Optical Properties ◽

Growth Reaction

ABSTRACTThe growth reaction mechanism was experimentally investigated for TEGa and TMSb used for MOCVD GaSb epitaxial growth. The variations of growth rate, substrate temperature, the V/III ratio and the mole-fraction of III and V source gases, were detailly considered and investigated with regard to their effect on electrical and optical properties were measured during the epitaxial process. The experimental results were used to provide an inspection on defects interaction mechanisms and on the type of conductivity. Based on the investigation of growth mechanism, at 470°, a high quality GaSb epitaxial film 1 with 3 mobility, 634 cm2/V*sec and low hole concentration, 1.67x1016 cm−2 was obtained.

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Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422553 ◽

2007 ◽

Author(s):

Meng-Fu Shih ◽

Yung-Hsiang Lin ◽

Chun-Wei Liao ◽

Chang-Ying Yen ◽

Yi-Lun Chou ◽

...

Keyword(s):

Optical Properties ◽

Electrical And Optical Properties ◽

Magnesium Doping ◽

Type Layer ◽

P Type

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Structural, electrical and optical properties of Mg-doped CuAlO2 films by pulsed laser deposition

RSC Advances ◽

10.1039/c4ra06390b ◽

2014 ◽

Vol 4 (78) ◽

pp. 41294-41300 ◽

Cited By ~ 13

Author(s):

Y. S. Zou ◽

H. P. Wang ◽

S. L. Zhang ◽

D. Lou ◽

Y. H. Dong ◽

...

Keyword(s):

Optical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Band Gaps ◽

Laser Deposition ◽

Electrical And Optical Properties ◽

Optical Band Gaps ◽

P Type ◽

Enhanced Conductivity ◽

Mg Doped

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.

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