Temperature Dependent Schottky Contacts to InP and GaAs

1991 ◽  
Vol 240 ◽  
Author(s):  
Z. Q. Shi ◽  
R. L. Wallace ◽  
W. A. Anderson

ABSTRACTThe barrier height of a Pd/n-InP diode was found to be increased from 0.48 to 0.96eV with the substrate temperature decreased from 300 to 77K during metal deposition. The leakage current density was reduced by more than six order of magnitude. It is obvious that the interface Fermi-level position lies well outside the variance associated with Fermi-level pinning. The barrier height for the Au/n-GaAs diode was found to be increased by about 0.25 eV with low temperature deposition and the leakage current reduced by more than five orders of magnitude. The mechanism responsible for the ultrahigh barrier height obtained at low substrate temperature was investigated by Raman spectroscopy, current voltage temperature measurement, deep level transient spectroscopy, and electroreflectance technique. The metal-insulator-semiconductor (MIS)-like structure formed at low substrate temperature and the reduction of interface state density may be the main reason for the dramatic enhancement of Schottky barrier height.

2018 ◽  
Vol 924 ◽  
pp. 289-292
Author(s):  
Yuji Yamagishi ◽  
Yasuo Cho

We demonstrate our new local deep level spectroscopy system improved for more accurate analysis of trap states at SiO2/4H-SiC interfaces. Full waveforms of the local capacitance transient with the amplitude of attofarads and the time scale of microseconds were obtained and quantitatively analyzed. The local energy distribution of interface state density in the energy range of EC − Eit = 0.31–0.38 eV was obtained. Two-dimensional mapping of the interface states showed inhomogeneous contrasts with the lateral spatial scale of several hundreds of nanometers, suggesting that the physical origin of the trap states at SiO2/SiC interfaces is likely to be microscopically clustered.


1991 ◽  
Vol 69 (9) ◽  
pp. 6521-6525 ◽  
Author(s):  
N. C. Halder ◽  
H. W. Kim ◽  
K. M. D’Souza ◽  
D. E. Barnes ◽  
S. E. Hartson ◽  
...  

2000 ◽  
Vol 5 (S1) ◽  
pp. 936-942 ◽  
Author(s):  
H. Witte ◽  
A. Krtschil ◽  
M. Lisker ◽  
D. Rudloff ◽  
J. Christen ◽  
...  

In GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects detected by thermal admittance spectroscopy as compared for deep level transient spectroscopy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.


1999 ◽  
Vol 595 ◽  
Author(s):  
H. Witte ◽  
A. Krtschil ◽  
M. Lisker ◽  
D. Rudloff ◽  
J. Christen ◽  
...  

AbstractIn GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects de-tected by thermal admittance spectroscopy as compared for deep level transient spectros-copy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.


2003 ◽  
Vol 786 ◽  
Author(s):  
S. Dueñas ◽  
H. Castán ◽  
H. García ◽  
J. Barbolla ◽  
K. Kukli ◽  
...  

ABSTRACTA study of metal-insulator-semiconductor (MIS) structures based on atomic layer deposited HfO2, Ta2O5 and Nb2O5−Ta2O5−Nb2O5 thin films is presented. Our attention was focussed on interface quality and defect density in the dielectric. Interface states as well as defects inside the insulator bulk were measured by using capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) and conductance transient (G-t) techniques. Nb2O5−Ta2O5−Nb2O5 based capacitors exhibit the highest interface state density, whereas the minimum is obtained for HfO2. Conductance transients are not observed in Al/HfO2/SiO2/Si stacks, thus indicating that disordered induced gap states (DIGS) are not present in these structures. We also observed that post-metallization annealing in forming gas diminishes the trap interface density at the expense of increasing DIGS in the Al/HfO2/Si cases.


2013 ◽  
Vol 740-742 ◽  
pp. 477-480 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
T. Shimizu ◽  
T. Suzuki ◽  
Y. Nakabayashi ◽  
Hajime Okumura ◽  
...  

Constant-capacitance deep-level-transient spectroscopy (CCDLTS) characterization of traps (or states) in SiO2/SiC interfaces on the C-face was carried out to clarify the cause of low-channel mobility of SiC MOSFETs. CCDLTS measurements showed that the interface-state density (Dit) near the conduction band of SiO2/SiC interfaces fabricated using N2O oxidation was much higher than that of SiO2/SiC interfaces fabricated using wet oxidation. The high density of interface states near the conduction band is likely to be the main cause of the low mobility of MOSFETs fabricated using N2O oxidation.


1991 ◽  
Vol 05 (06) ◽  
pp. 397-405
Author(s):  
D.R. HESLINGA ◽  
T.M. KLAPWIJK ◽  
H.H. WEITERING ◽  
T. HIBMA

We review experiments on epitaxial Pb/Si (111) interfaces. Emphasis is laid on the interplay between structural and electrical properties, in particular the relation of the Schottky barrier height (SBH) with the structure of the first monoatomic Pb adlayer. Two structures can be formed, which differ only in the arrangement of the first layer of Pb and Si atoms at the interface. One, a Si (111)(7×7)- Pb structure, has a SBH of 0.70 eV. The other, a Si (111)(√3×√3) R 30°- Pb structure has a SBH of 0.93 eV. Angle resolved photoemission results favor an interpretation in terms of Fermi level pinning by a discrete locali::ed interface state.


1985 ◽  
Vol 57 (10) ◽  
pp. 4811-4813 ◽  
Author(s):  
Herman E. Maes ◽  
Sabir H. Usmani ◽  
Guido Groeseneken

1984 ◽  
Vol 44 (8) ◽  
pp. 790-792 ◽  
Author(s):  
M. C. Chen ◽  
D. V. Lang ◽  
W. C. Dautremont‐Smith ◽  
A. M. Sergent ◽  
J. P. Harbison

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