X-ray spectroscopic and stroboscopic analysis of pulsed-laser ablation of Zn and its oxidation

2017 ◽  
Vol 124 (1) ◽  
Author(s):  
Stefan Reich ◽  
Jörg Göttlicher ◽  
Alexander Letzel ◽  
Bilal Gökce ◽  
Stephan Barcikowski ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray

Microstructure and Thermoelectric Properties of p-Type Bi0.5Sb1.5Te3 and n-Type Bi2Te2.7Se0.3 Films Deposited by Pulsed Laser Ablation

2001 ◽  
Vol 691 ◽  
Author(s):  
Raghuveer S. Makala ◽  
K. Jagannadham ◽  
B.C. Sales ◽  
Hsin Wang
Keyword(s):  
Laser Ablation ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Uniform Thickness ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Crystal Perfection ◽  
P Type

ABSTRACTThin films of p-type Bi0.5Sb1.5Te3, n-type Bi2Te2.7Se0.3 and n-type with SbI3 doping were deposited on mica substrates using Nd-YAG pulsed laser ablation at temperatures ranging from 300°C to 500°C. These films were characterized using X-ray diffraction, SEM and TEM. X-ray mapping and EDS were used to determine the composition. The films showed uniform thickness and high crystalline quality with a preferred (00n) alignment with the substrates. The film quality in terms of composition and crystal perfection is studied as a function of growth temperature. It was found that films deposited at 350°C gave improved crystallinity and thermoelectric characteristics. The Seebeck coefficient, electrical resistivity and Hall mobility were measured as a function of temperature and compared with the measurements on the bulk. Correlation of thermoelectric properties with microstructure is discussed.

Growth of Epitaxial ZnS Films by Pulsed-Laser Ablation

1992 ◽  
Vol 242 ◽  
Author(s):  
J. W. McCamy ◽  
D. H. Lowndes ◽  
J. D. Budai ◽  
B. C. Chakoumakos ◽  
R. A. Zuhr
Keyword(s):  
Laser Ablation ◽  
Stacking Faults ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Temperature Dependent ◽  
High Quality ◽  
X Ray ◽  
Fault Density ◽  
Highly Uniform ◽  
Zns Films

ABSTRACTPulsed KrF (248nm) laser ablation of a polycrystailine ZnS target has been used to grow high quality, carbon-free, epitaxial ZnS thin films on GaAs(OOl), GaAs(111), and GaP(OOl). The films were grown at temperatures of 150–450°C, using a rotating substrate heater and deposition geometry that produces films with highly uniform thickness. X-ray rocking curves are consistent with (111) stacking faults being the dominant defects in the ZnS films grown on GaAs. The estimated stacking fault density is ∼6 × 1010 cm-3, comparable to the best MOCVD ZnS films. RBS analysis shows that these defects are located predominantly near the GaAs-ZnS interface. The anisotropy of the ZnS growth rate, between the GaAs(001) and GaAs(111) surfaces, was found to be temperature-dependent.

Characterization of BaTiO3 Thin Films Deposited by Pulsed-Laser Ablation

1990 ◽  
Vol 201 ◽  
Author(s):  
Christopher Scarfone ◽  
M. Grant Norton ◽  
C. Barry Carter ◽  
Jian Li ◽  
James W. Mayer
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Film Surface ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Very High

AbstractThin films of barium titanate (BaTiOs) have been deposited by pulsed-laser ablation onto (001)-oriented MgO substrates. The films were epitactic as evidenced by both x-ray diffraction and ion-channeling techniques. The film surface appeared smooth and contained a low density of particulates. This latter feature is believed to be due to the formation of target pellets having a very high density.

SYNTHESIS OF ULTRAFINE/NANOSIZE POWDERS OF IRON OXIDES BY PULSED LASER ABLATION AND COLD CONDENSATION

1996 ◽  
Vol 10 (30) ◽  
pp. 1517-1527 ◽  
Author(s):  
S. R. SHINDE ◽  
A. G. BANPURKAR ◽  
K. P. ADHI ◽  
A. V. LIMAYE ◽  
S. B. OGALE ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Vibrating Sample Magnetometry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Nanosize Particles ◽  
Cold Condensation ◽  
Scanning Electron

Ultrafine/nanosize powders of iron oxide have been synthesized from a sintered α- Fe 2 O 3 target by pulsed excimer laser ablation and cold condensation. The influence of target porosity and temperature of condensation on the formation of nanosize particles has been studied. The nanosize powders have been characterized by X-ray diffraction, Mössbauer spectroscopy, vibrating sample magnetometry and scanning electron microscopy. It is shown that the formation of ultrafine/nanosize particles is strongly governed by the target porosity, whereas, the temperature of condensation, over a range from 27°C to −130°C, does not affect the magnetic properties of the nanoparticles.

X-ray characterization of PbSe/Si layers grown by pulsed laser ablation method

2001 ◽  
Author(s):  
Roman Rumianowski ◽  
Roman S. Dygdala ◽  
Waclaw Bala ◽  
Jaroslaw Sylwisty
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray ◽  
Laser Ablation Method

scholarly journals PL Tunable GaN Nanoparticles Synthesis through Femtosecond Pulsed Laser Ablation in Different Environments

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 439 ◽  
Author(s):  
Juan Hao ◽  
Sijia Xu ◽  
Bingrong Gao ◽  
Lingyun Pan
Keyword(s):  
Laser Ablation ◽  
Photoelectron Spectroscopy ◽  
Pulse Laser Ablation ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Alternative Methods ◽  
X Ray ◽  
Pl Spectra ◽  
Bulk Gan

The tunable photoluminescence (PL) property is very important for gallium nitride (GaN) nanoparticles in the application of ultraviolet and blue optoelectronic devices, while conventional methods are not so satisfactory that alternative methods for preparing GaN nanoparticles should be studied. In this paper, ultra-small and well dispersed GaN nanoparticles are fabricated through femtosecond pulse laser ablation in air, water and ethanol. For the PL spectra of GaN nanoparticles, there are no shifts in air, red shifts in water and blue shifts in ethanol compared with the intrinsic PL spectra of bulk GaN. The X-ray photoelectron spectroscopy (XPS) results demonstrate that the various PL spectra can be due to the different components inside the GaN nanoparticles, which not only have effect on the PL emissions, but also greatly influence the intensity of PL. This study validates that the ablation environment has a great adjustable effect on the properties of GaN nanoparticles.

Epitaxial Growth of YBa2CH3O7-δ Films on Rolling-Assisted Biaxially Textured Substrates (RABiTS) Produced by Pulsed Laser Ablation at Low Temperatures

1998 ◽  
Vol 526 ◽  
Author(s):  
J. E. Mathis ◽  
A. Goyal ◽  
M. Paranthaman ◽  
E. D. Specht ◽  
D. M. Kroeger ◽  
...  
Keyword(s):  
Electron Beam ◽  
Laser Ablation ◽  
Low Temperatures ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Electron Beam Evaporation ◽  
Buffer Layers ◽  
Sem Images ◽  
X Ray ◽  
Deposition Conditions

AbstractEpitaxial YBa2Cu3O7-δ (YBCO) films were fabricated using laser ablation of YBCO onto rolling-assisted-biaxially-textured-substrates (RABiTS) at a temperature of 650°C. The configuration of the sample was YBCO/YSZ/CeO/Ni. The CeO2 and YSZ buffer layers were deposited using electron-beam evaporation and sputtering, respectively. Both of these techniques are considered to be industrially scalable. SEM images of the YBCO reveal a range of structures ranging from jumbled a-axis to dense c-axis morphologies depending upon the deposition conditions. X-ray θ-2θ scans show a similar c-axis dependence on the deposition conditions.

scholarly journals Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target

2019 ◽  
Vol 65 (4 Jul-Aug) ◽  
pp. 345 ◽  
Author(s):  
F. Chale-Lara ◽  
M. Zapata-Torres ◽  
F. Caballero-Briones ◽  
W. De la Cruz ◽  
N. Cruz Gonzalez ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Phase ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Nitrogen Pressure ◽  
Binding Energies ◽  
Xps Spectra ◽  
X Ray

We report the synthesis of AlN hexagonal thin films by pulsed laser ablation, using Al target in nitrogen ambient over natively-oxidized Si (111) at 600°C. Composition and chemical state were determined by X-ray photoelectron spectroscopy (XPS); while structural properties were investigated using X-ray diffraction (XRD). High-resolution XPS spectra present a gradual shift to higher binding energies on the Al2ppeak when nitrogen pressure is incremented, indicating the formation of the AlN compound. At 30 mTorr nitrogen pressure, theAl2p peak corresponds to AlN, located at 73.1 eV, and the XRD pattern shows a hexagonal phase of AlN. The successful formation of the AlN compound is corroborated by UV-Vis reflectivity measurements.

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