OMVPE Growth of ZnSe Utilizing Zinc Amides as Source Compounds: Relevance to the Production of p-Type Material

1992 ◽  
Vol 242 ◽  
Author(s):  
William S. Rees ◽  
David M. Green ◽  
Timothy J. Anderson ◽  
Eric Bretschneider
Keyword(s):  
Thin Films ◽  
Type Material ◽  
Zinc Source ◽  
Dopant Level ◽  
P Type

ABSTRACTGrowth of ZnSe on GaAs from H2S9 and Zn[N(TMS)2]2 precursors has been demonstrated. When Et2Zn is used as the zinc precursor a higher quality deposit is obtained. Results of experiments employing Et2Zn as the main zinc source with Zn[N(TMS)2]2 introduced at a dopant level indicate nitrogen has been incorporated. Final thin films were characterized by PL, XRD, SIMS, and Raman.

Introduction of PANI Thin Films

2020 ◽  
pp. 1-27
Keyword(s):  
Thin Films ◽  
Conducting Polymers ◽  
Essential Feature ◽  
Molecular Structures ◽  
Environmental Stability ◽  
Type Material ◽  
Acid Base ◽  
Potential Applications ◽  
P Type ◽  
Reduced State

In all conducting polymers (CPs), polyaniline (PANI) is one of the most thoroughly studied CPs. An essential feature of PANI is that its repeating units have two different moieties in different weights: oxidized and reduced state. In light of this element, PANI might be doped to get new molecular structures with various properties. It is considered as a (p-type) material, since it has excellent mechanical flexibility and environmental stability, and its conductivity could be controlled with acid/base (doping/undoping), it has potential applications in numerous fields, for example, lightweight battery electrodes, electromagnetic shielding devices, anti-corrosion coatings, and sensors. This chapter is focused on PANI as a leading polymer and brief synthesis of PANI thin films by the diverse strategies pursued by various applications in different fields.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

scholarly journals Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films

2021 ◽  
Author(s):  
Dong Han ◽  
Rahma Moalla ◽  
Ignasi Fina ◽  
Valentina M. Giordano ◽  
Marc d’Esperonnat ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Epitaxial Strain ◽  
P Type

Solution-phase p-type doping of highly enriched semiconducting single-walled carbon nanotubes for thermoelectric thin films

2021 ◽  
Vol 119 (2) ◽  
pp. 023302
Author(s):  
Noah J. Stanton ◽  
Rachelle Ihly ◽  
Brenna Norton-Baker ◽  
Andrew J. Ferguson ◽  
Jeffrey L. Blackburn
Keyword(s):  
Thin Films ◽  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Solution Phase ◽  
Single Walled Carbon ◽  
Thermoelectric Thin Films ◽  
P Type ◽  
Walled Carbon Nanotubes

Fabrication of high hole-carrier density p-type ZnO thin films by N–Al co-doping

2007 ◽  
Vol 253 (8) ◽  
pp. 3825-3827 ◽  
Author(s):  
Zhang Xiaodan ◽  
Fan Hongbing ◽  
Zhao Ying ◽  
Sun Jian ◽  
Wei Changchun ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Zno Thin Films ◽  
Co Doping ◽  
P Type

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Effect of aging heat time and annealing temperature on the properties of nanocrystalline tin dioxide thin films

2017 ◽  
Vol 31 (12) ◽  
pp. 1750114
Author(s):  
Imad H. Kadhim ◽  
H. Abu Hassan
Keyword(s):  
Thin Films ◽  
Tin Dioxide ◽  
Sol Gel ◽  
Stable Solution ◽  
Solution Viscosity ◽  
Pure Ethanol ◽  
Rutile Structure ◽  
Heat Time ◽  
Chloride Dihydrate ◽  
P Type

Nanocrystalline tin dioxide (SnO2) thin films have been successfully prepared by sol–gel spin-coating technique on p-type Si (100) substrates. A stable solution was prepared by mixing tin(II) chloride dihydrate, pure ethanol, and glycerin. Temperature affects the properties of SnO2 thin films, particularly the crystallite size where the crystallization of SnO2 with tetragonal rutile structure is achieved when thin films that prepared under different aging heat times are annealed at 400[Formula: see text]C. By increasing aging heat time in the presence of annealing temperatures the FESEM images indicated that the thickness of the fabricated film was directly proportional to solution viscosity, increasing from approximately 380 nm to 744 nm, as well as the crystallization of the thin films improved and reduced defects.

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